公开(公告)号：US08258752B2

公开(公告)日：2012-09-04

申请号：US12629956

申请日：2009-12-03

Applicant: Kuo-Chin Chiu ,  Chih-Feng Huang

Inventor： Kuo-Chin Chiu ,  Chih-Feng Huang

IPC: H02J7/00 ,  H02J7/04 ,  H02J7/16

CPC classification number: H03K17/063 ,  H01L27/0727 ,  H02J7/0031 ,  H03K2217/0036 ,  Y10T279/26

Abstract: The present invention discloses an integrated PMOS transistor and Schottky diode, comprising a PMOS transistor which includes a gate, a source, a drain and a channel region between the source and drain, wherein the source, drain and channel region are formed in a substrate, and a parasitic diode is formed between the drain and the channel region; and a Schottky diode formed in the substrate and connected in reverse series with the parasitic diode, the Schottky diode having one end connected with the parasitic diode and the other end connected with the source.

Abstract translation: 本发明公开了一种集成PMOS晶体管和肖特基二极管，其包括PMOS晶体管，PMOS晶体管在源极和漏极之间包括栅极，源极，漏极和沟道区域，其中源极，漏极和沟道区域形成在衬底中， 并且在漏极和沟道区域之间形成寄生二极管; 和形成在衬底中并与寄生二极管反向串联连接的肖特基二极管，肖特基二极管的一端与寄生二极管连接，另一端与源极连接。

公开(公告)号：US20120217579A1

公开(公告)日：2012-08-30

申请号：US13136703

申请日：2011-08-08

Applicant: Tsung-Yi Huang ,  Ying-Shiou Lin

Inventor： Tsung-Yi Huang ,  Ying-Shiou Lin

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/0847 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/1045 ,  H01L29/42368 ,  H01L29/7835

Abstract: The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device includes: a substrate, having a P (or N) type well and an isolation structure for defining a device region; a drift region, located in the device region, having a first region and a second region wherein the first region is an N (or P) type region, and the second region is a P (or N) type region or an N (or P) type region with different dopant concentration from the first region, and from top view, the first region and the second region include sub-regions distributed in the drift region; an N (or P) type source and drain; and a gate on a surface of the substrate, between the source and drain in the device region.

Abstract translation: 本发明公开了一种高压器件及其制造方法。 高压装置包括：具有P（或N）型阱的衬底和用于限定器件区域的隔离结构; 位于器件区域中的漂移区域具有第一区域和第二区域，其中第一区域是N（或P）型区域，第二区域是P（或N）型区域或N（或 P）型区域，并且从顶视图看，第一区域和第二区域包括分布在漂移区域中的子区域; N（或P）型源极和漏极; 以及衬底的表面上的栅极，位于器件区域中的源极和漏极之间。

公开(公告)号：US20120187483A1

公开(公告)日：2012-07-26

申请号：US13066622

申请日：2011-04-20

Applicant: Ching-Yao Yang ,  Tsung-Yi Huang ,  Huan-Ping Chu ,  Hung-Der Su

Inventor： Ching-Yao Yang ,  Tsung-Yi Huang ,  Huan-Ping Chu ,  Hung-Der Su

IPC: H01L29/78 ,  H01L21/8232 ,  H01L21/336

CPC classification number: H01L29/4238 ,  H01L21/28114 ,  H01L21/823425 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/66689 ,  H01L29/7816 ,  H01L29/7835

Abstract: The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: an isolation structure for defining device regions; a gate with a ring-shaped structure; a drain located outside the ring; and a lightly doped drain, a source, and a body electrode located inside the ring. To increase the sub-threshold voltage at the corners of the gate, the corners are located completely on the isolation structure, or the lightly doped drain is apart from the corners by a predetermined distance.

Abstract translation: 本发明公开了一种双扩散金属氧化物半导体（DMOS）器件及其制造方法。 DMOS设备包括：用于定义设备区域的隔离结构; 具有环形结构的门; 位于环外的排水沟; 以及位于环内的轻掺杂漏极，源极和体电极。 为了增加栅极角落处的次阈值电压，角部完全位于隔离结构上，或者轻掺杂漏极与角分开预定距离。

公开(公告)号：US20120161235A1

公开(公告)日：2012-06-28

申请号：US13317323

申请日：2011-10-15

Applicant: Tsung-Yi Huang ,  Jin-Lian Su

Inventor： Tsung-Yi Huang ,  Jin-Lian Su

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/41758 ,  H01L27/0277 ,  H01L29/6659 ,  H01L29/7835

Abstract: The present invention discloses an electrostatic discharge protection device and a manufacturing method thereof. The electrostatic discharge protection device includes: a substrate, a gate, two N type lightly doped drains, an N type source, an N type drain, and two N type doped regions extending downward beneath and in contact with the source and drain respectively, such that when the source and drain are conducted with each other, at least part of the current flows through the two downwardly extending doped regions to increase the electrostatic discharge protection voltage of the electrostatic discharge protection device.

Abstract translation: 本发明公开了一种静电放电保护装置及其制造方法。 静电放电保护装置包括：基板，栅极，两个N型轻掺杂漏极，N型源极，N型漏极和分别向下延伸并与源极和漏极接触的两个N型掺杂区域， 当源极和漏极彼此导通时，至少部分电流流过两个向下延伸的掺杂区域以增加静电放电保护器件的静电放电保护电压。

公开(公告)号：US08179059B2

公开(公告)日：2012-05-15

申请号：US12579802

申请日：2009-10-15

Applicant: Chih-Hao Yang ,  Fu-Yuan Shih ,  An-Tung Chen ,  Shui-Mu Lin

Inventor： Chih-Hao Yang ,  Fu-Yuan Shih ,  An-Tung Chen ,  Shui-Mu Lin

IPC: G05F1/00 ,  H05B37/02 ,  H05B39/04 ,  H05B41/36 ,  H05B37/00 ,  H05B39/00 ,  H05B41/00

CPC classification number: H05B33/0887 ,  H05B33/0815 ,  H05B33/0827 ,  Y02B20/347

Abstract: The present invention discloses a circuit and a method for controlling a light emitting device, and an integrated circuit therefore. The circuit for controlling a light emitting device comprises: a power stage controller circuit controlling a power stage circuit to convert an input voltage to an output voltage, which is supplied to at least one light emitting device channel including at least one light emitting device; a transistor switch in the light emitting device channel; and a current source circuit controlling a current through the light emitting device channel, wherein the power stage controller circuit and the current source circuit are integrated in an integrated circuit which provides a control voltage to control a gate of the transistor switch.

Abstract translation: 本发明公开了一种用于控制发光器件的电路和方法，以及集成电路。 用于控制发光器件的电路包括：功率级控制器电路，其控制功率级电路以将输入电压转换为输出电压，所述输出电压被提供给包括至少一个发光器件的至少一个发光器件通道; 发光器件通道中的晶体管开关; 以及电流源电路，其控制通过所述发光器件沟道的电流，其中所述功率级控制器电路和所述电流源电路集成在提供控制电压以控制所述晶体管开关的栅极的集成电路中。

公开(公告)号：US08143130B1

公开(公告)日：2012-03-27

申请号：US12910051

申请日：2010-10-22

Applicant: Tsung-Yi Huang

Inventor： Tsung-Yi Huang

IPC: H01L21/8236

CPC classification number: H01L27/0883 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823462

Abstract: The present invention discloses a method of manufacturing a depletion metal oxide semiconductor (MOS) device. The method includes: providing a substrate; forming a first conductive type well and an isolation region in the substrate to define a device area; defining a drift region, a source, a drain, and a threshold voltage adjustment region, and implanting second conductive type impurities to form the drift region, the source, the drain, and the threshold voltage adjustment region, respectively; defining a breakdown protection region between the drain and the threshold voltage adjustment region, and implanting first conductive type impurities to form the breakdown protection region; and forming a gate in the device area; wherein a part of the breakdown protection region is below the gate, and the breakdown protection region covers an edge of the threshold voltage adjustment region.

Abstract translation: 本发明公开了一种制造耗尽金属氧化物半导体（MOS）器件的方法。 该方法包括：提供衬底; 在衬底中形成第一导电类型阱和隔离区以限定器件区域; 限定漂移区域，源极，漏极和阈值电压调整区域，以及分别植入第二导电类型杂质以形成漂移区域，源极，漏极和阈值电压调整区域; 限定漏极和阈值电压调整区域之间的击穿保护区域，以及注入第一导电型杂质以形成击穿保护区域; 以及在所述设备区域中形成栅极; 其中所述击穿保护区域的一部分在所述栅极下方，所述击穿保护区域覆盖所述阈值电压调整区域的边缘。

公开(公告)号：US08049462B2

公开(公告)日：2011-11-01

申请号：US12284235

申请日：2008-09-18

Applicant: Nien-Hui Kung ,  Kwan-Jen Chu ,  Jing-Meng Liu

Inventor： Nien-Hui Kung ,  Kwan-Jen Chu ,  Jing-Meng Liu

IPC: H02J7/02

CPC classification number: H02J7/0031 ,  H02J2007/0039 ,  H02J2007/0062

Abstract: The present invention discloses a universal serial bus (USB) charging circuit, comprising: a charging path for charging a battery from a USB host; a charging switch located on the charging path; a current sensing circuit for sensing current information on the charging path; a maximum available current detection circuit for detecting the maximum available current from the USB host; and a loop controller circuit for controlling the charging switch so that the charging current on the charging path is substantially equal to the maximum available current detected by the maximum available current detection circuit, wherein the maximum available current detection circuit detects the maximum available current during circuit initialization and stores it.

Abstract translation: 本发明公开了一种通用串行总线（USB）充电电路，包括：用于从USB主机对电池充电的充电路径; 位于充电路径上的充电开关; 用于感测充电路径上的当前信息的电流感测电路; 用于检测来自USB主机的最大可用电流的最大可用电流检测电路; 以及环路控制器电路，用于控制充电开关，使得充电路径上的充电电流基本上等于由最大可用电流检测电路检测的最大可用电流，其中最大可用电流检测电路检测电路中的最大可用电流 初始化并存储它。

公开(公告)号：US20110156685A1

公开(公告)日：2011-06-30

申请号：US12648412

申请日：2009-12-29

Applicant: Wen-Wei Chen ,  Kuo-Chi Liu

Inventor： Wen-Wei Chen ,  Kuo-Chi Liu

IPC: G05F1/618

CPC classification number: H02M3/1582

Abstract: The present invention discloses a constant time buck-boost switching regulator, and a control circuit and a method for controlling the buck-boost switching regulator. The buck-boost switching regulator includes an inductor, a first and a second power switches coupled to a first end and a second end of the inductor respectively, and a first and a second power devices coupled to the first end and the second end of the inductor respectively, the first power switch being coupled between the first end of the inductor and an input voltage, the second power switch being coupled between the second end of the inductor and ground, the first power device being coupled between the first end of the inductor and ground, and the second power device being coupled between the second end of the inductor and an output voltage. The control method comprises: generating only one single constant time; and generating a switch control signal to control the first and second power switches such that the first and second power switches operate by the same switching period with the same ON-time.

Abstract translation: 本发明公开了一种恒定时间降压 - 升压开关调节器，以及用于控制降压 - 升压开关调节器的控制电路和方法。 降压 - 升压开关调节器包括电感器，分别耦合到电感器的第一端和第二端的第一和第二功率开关，以及耦合到电感器的第一端和第二端的第一和第二功率器件 电感器分别耦合在电感器的第一端和输入电压之间，第二功率开关耦合在电感器的第二端和地之间，第一功率器件耦合在电感器的第一端之间 并接地，并且第二功率器件耦合在电感器的第二端和输出电压之间。 该控制方法包括：仅产生一个恒定时间; 以及产生开关控制信号以控制第一和第二功率开关，使得第一和第二功率开关以相同的导通时间在相同的开关周期下工作。

公开(公告)号：US20110089854A1

公开(公告)日：2011-04-21

申请号：US12579802

申请日：2009-10-15

Applicant: Chih-Hao Yang ,  Fu-Yuan Shih ,  An-Tung Chen ,  Shui-Mu Lin

Inventor： Chih-Hao Yang ,  Fu-Yuan Shih ,  An-Tung Chen ,  Shui-Mu Lin

IPC: H05B37/02

CPC classification number: H05B33/0887 ,  H05B33/0815 ,  H05B33/0827 ,  Y02B20/347

Abstract: The present invention discloses a circuit and a method for controlling a light emitting device, and an integrated circuit therefore. The circuit for controlling a light emitting device comprises: a power stage controller circuit controlling a power stage circuit to convert an input voltage to an output voltage, which is supplied to at least one light emitting device channel including at least one light emitting device; a transistor switch in the light emitting device channel; and a current source circuit controlling a current through the light emitting device channel, wherein the power stage controller circuit and the current source circuit are integrated in an integrated circuit which provides a control voltage to control a gate of the transistor switch.

Abstract translation: 本发明公开了一种用于控制发光器件的电路和方法，以及集成电路。 用于控制发光器件的电路包括：功率级控制器电路，其控制功率级电路以将输入电压转换为输出电压，所述输出电压被提供给包括至少一个发光器件的至少一个发光器件通道; 发光器件通道中的晶体管开关; 以及电流源电路，其控制通过所述发光器件沟道的电流，其中所述功率级控制器电路和所述电流源电路集成在提供控制电压以控制所述晶体管开关的栅极的集成电路中。

公开(公告)号：US20100301764A1

公开(公告)日：2010-12-02

申请号：US12768046

申请日：2010-04-27

Applicant: Jing-Meng Liu

Inventor： Jing-Meng Liu

IPC: H05B37/02

CPC classification number: H05B33/0827 ,  H05B33/0818 ,  Y02B20/346

Abstract: The present invention discloses an LED controller with phase-shift dimming function and an LED Phase-Shift dimming circuit and method thereof. The LED controller includes: a power circuit for supplying DC power to multiple LED channels; and an LED phase-shift dimming circuit for receiving a pulse width modulation (PWM) input signal and generating multiple phase-shifted PWM signals with a shifted phase between one another, wherein a turn-ON timing of each of the multiple phase-shifted PWM signals follows a turn-OFF timing of a previous PWM signal which is the input PWM signal or a previous one of the multiple phase-shifted PWM signals.

Abstract translation: 本发明公开了一种具有相移调光功能的LED控制器和一个LED相移调光电路及其方法。 LED控制器包括：用于向多个LED通道提供直流电力的电源电路; 以及LED相移调光电路，用于接收脉冲宽度调制（PWM）输入信号并产生具有相互偏移的相位的多个相移PWM信号，其中多个相移PWM中的每一个的导通定时 信号遵循作为输入PWM信号或多个相移PWM信号中的先前PWM信号的先前PWM信号的关断定时。