公开(公告)号：US06292505B1

公开(公告)日：2001-09-18

申请号：US09285721

申请日：1999-04-05

申请人： Yushi Takenaka ,  Jun-ichi Nishimae ,  Yukio Satoh

发明人： Yushi Takenaka ,  Jun-ichi Nishimae ,  Yukio Satoh

IPC分类号： H01S3082

CPC分类号： H01S3/082 ,  H01S3/08054 ,  H01S3/0813 ,  H01S3/107 ,  H01S3/115

摘要： In a laser apparatus, when no voltage is applied to optical modulator, a first linearly polarized component of a laser beam which passes through a polarization control mirror causes a laser oscillation in a first laser resonator and a laser beam is output from a second reflecting mirror. When a pulsed voltage is applied to the optical modulator, a second linearly polarized component of the laser beam reflected by the polarization control mirror passes through the optical modulation means and causes a Q-switched laser oscillation in a second laser resonator. In this case, the first linearly polarized component passes through the polarization control mirror and is output from the second reflecting mirror. This technique makes it possible to combine a Q-switched laser apparatus with a non-Q-switched laser apparatus without causing the power of the laser beam to exceed a maximum allowable limit that an electrooptical modulator can handle.

摘要翻译： 在激光装置中，当没有电压施加到光调制器时，通过偏振控制反射镜的激光束的第一直线偏振分量在第一激光谐振器中引起激光振荡，并且激光束从第二反射镜 。 当向光调制器施加脉冲电压时，由偏振控制反射镜反射的激光束的第二直线偏振分量通过光调制装置，并在第二激光谐振器中引起Q开关激光振荡。 在这种情况下，第一线偏振分量通过偏振控制反射镜并从第二反射镜输出。 该技术使得可以将Q开关激光装置与非Q开关激光装置组合，而不会使激光束的功率超过电光调制器可以处理的最大允许极限。

公开(公告)号：US06201825B1

公开(公告)日：2001-03-13

申请号：US09320711

申请日：1999-05-27

申请人： Jun Sakurai ,  Hideo Nakayama ,  Hiromi Otoma ,  Yasuaki Miyamoto

发明人： Jun Sakurai ,  Hideo Nakayama ,  Hiromi Otoma ,  Yasuaki Miyamoto

IPC分类号： H01S3082

CPC分类号： H01S5/1833 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/18311 ,  H01S5/3432 ,  H01S2301/176

摘要： It is to provide a surface emitting semiconductor laser device having a long life time and uniform light output characteristics. A periphery of an upper surface and a side surface of a mesa structure is covered with a silicon oxide nitride film 34 as an inorganic insulating film, the mesa structure comprising a lower DBR 16 of a first conductive type formed on a first primary surface of an n-type GaAs substrate 12, having formed thereon an active region 24, an upper DBR 26 containing an AlAs layer 32 as the lowermost layer, and a p-type GaAs contact layer 28.

摘要翻译： 本发明提供一种寿命长，光输出特性均匀的表面发射半导体激光器件。在作为无机绝缘膜的氧化硅氮化物膜34覆盖台面结构的上表面和侧面的周围， 台面结构包括形成在n型GaAs衬底12的第一主表面上的第一导电类型的下DBR 16，其上形成有源区24，包含AlAs层32作为最下层的上DBR 26， 和p型GaAs接触层28。