公开(公告)号：US06201825B1

公开(公告)日：2001-03-13

申请号：US09320711

申请日：1999-05-27

申请人： Jun Sakurai ,  Hideo Nakayama ,  Hiromi Otoma ,  Yasuaki Miyamoto

发明人： Jun Sakurai ,  Hideo Nakayama ,  Hiromi Otoma ,  Yasuaki Miyamoto

IPC分类号： H01S3082

CPC分类号： H01S5/1833 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/18311 ,  H01S5/3432 ,  H01S2301/176

摘要： It is to provide a surface emitting semiconductor laser device having a long life time and uniform light output characteristics. A periphery of an upper surface and a side surface of a mesa structure is covered with a silicon oxide nitride film 34 as an inorganic insulating film, the mesa structure comprising a lower DBR 16 of a first conductive type formed on a first primary surface of an n-type GaAs substrate 12, having formed thereon an active region 24, an upper DBR 26 containing an AlAs layer 32 as the lowermost layer, and a p-type GaAs contact layer 28.

摘要翻译： 本发明提供一种寿命长，光输出特性均匀的表面发射半导体激光器件。在作为无机绝缘膜的氧化硅氮化物膜34覆盖台面结构的上表面和侧面的周围， 台面结构包括形成在n型GaAs衬底12的第一主表面上的第一导电类型的下DBR 16，其上形成有源区24，包含AlAs层32作为最下层的上DBR 26， 和p型GaAs接触层28。

公开(公告)号：US07079562B2

公开(公告)日：2006-07-18

申请号：US11105464

申请日：2005-04-14

申请人： Akira Sakamoto ,  Hideo Nakayama ,  Yasuaki Miyamoto ,  Jun Sakurai

发明人： Akira Sakamoto ,  Hideo Nakayama ,  Yasuaki Miyamoto ,  Jun Sakurai

IPC分类号： H01S5/00

CPC分类号： H01S5/18311 ,  H01S5/18358 ,  H01S5/2086

摘要： A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.

摘要翻译： 一种制造表面发射半导体激光器的方法包括：第一步骤，在衬底上形成具有从衬底的中心辐射的条带的多个监视用半导体层，以及包括半导体层并位于外围的激光部分 多个监视用半导体层的第二步骤，在激光部中形成选择性氧化区域时，在多个监视用半导体层上监测氧化条件的第二工序，以及控制上述选择氧化区域的氧化的第三工序 由此监测的氧化条件的基础。

公开(公告)号：US07078257B2

公开(公告)日：2006-07-18

申请号：US10384607

申请日：2003-03-11

申请人： Akira Sakamoto ,  Hideo Nakayama ,  Yasuaki Miyamoto ,  Jun Sakurai

发明人： Akira Sakamoto ,  Hideo Nakayama ,  Yasuaki Miyamoto ,  Jun Sakurai

IPC分类号： H01L21/00

CPC分类号： H01S5/18311 ,  H01S5/18358 ,  H01S5/2086

摘要： A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.

摘要翻译： 一种制造表面发射半导体激光器的方法包括：第一步骤，在衬底上形成具有从衬底的中心辐射的条带的多个监视用半导体层，以及包括半导体层并位于外围的激光部分 多个监视用半导体层的第二步骤，在激光部中形成选择性氧化区域时，在多个监视用半导体层上监测氧化条件的第二工序，以及控制上述选择氧化区域的氧化的第三工序 由此监测的氧化条件的基础。

公开(公告)号：US20050180476A1

公开(公告)日：2005-08-18

申请号：US11105450

申请日：2005-04-14

申请人： Akira Sakamoto ,  Hideo Nakayama ,  Yasuaki Miyamoto ,  Jun Sakurai

发明人： Akira Sakamoto ,  Hideo Nakayama ,  Yasuaki Miyamoto ,  Jun Sakurai

IPC分类号： H01L21/66 ,  H01S5/183 ,  H01S5/20 ,  H01S5/22 ,  H01S5/323 ,  H01S5/00

CPC分类号： H01S5/18311 ,  H01S5/18358 ,  H01S5/2086

摘要： A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.

摘要翻译： 一种制造表面发射半导体激光器的方法包括：第一步骤，在衬底上形成具有从衬底的中心辐射的条带的多个监视用半导体层，以及包括半导体层并位于外围的激光部分 多个监视用半导体层的第二步骤，在激光部中形成选择性氧化区域时，在多个监视用半导体层上监测氧化条件的第二工序，以及控制上述选择氧化区域的氧化的第三工序 由此监测的氧化条件的基础。

公开(公告)号：US07079561B2

公开(公告)日：2006-07-18

申请号：US11105450

申请日：2005-04-14

申请人： Akira Sakamoto ,  Hideo Nakayama ,  Yasuaki Miyamoto ,  Jun Sakurai

发明人： Akira Sakamoto ,  Hideo Nakayama ,  Yasuaki Miyamoto ,  Jun Sakurai

IPC分类号： H01S5/00

CPC分类号： H01S5/18311 ,  H01S5/18358 ,  H01S5/2086

摘要： A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.

摘要翻译： 一种制造表面发射半导体激光器的方法包括：第一步骤，在衬底上形成具有从衬底的中心辐射的条带的多个监视用半导体层，以及包括半导体层并位于外围的激光部分 多个监视用半导体层的第二步骤，在激光部中形成选择性氧化区域时，在多个监视用半导体层上监测氧化条件的第二工序，以及控制上述选择氧化区域的氧化的第三工序 由此监测的氧化条件的基础。

公开(公告)号：US20050180478A1

公开(公告)日：2005-08-18

申请号：US11105464

申请日：2005-04-14

申请人： Akira Sakamoto ,  Hideo Nakayama ,  Yasuaki Miyamoto ,  Jun Sakurai

发明人： Akira Sakamoto ,  Hideo Nakayama ,  Yasuaki Miyamoto ,  Jun Sakurai

IPC分类号： H01L21/66 ,  H01S5/183 ,  H01S5/20 ,  H01S5/22 ,  H01S5/323 ,  H01S5/00

CPC分类号： H01S5/18311 ,  H01S5/18358 ,  H01S5/2086

摘要： A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.

摘要翻译： 一种制造表面发射半导体激光器的方法包括：第一步骤，在衬底上形成具有从衬底的中心辐射的条带的多个监视用半导体层，以及包括半导体层并位于外围的激光部分 多个监视用半导体层的第二步骤，在激光部中形成选择性氧化区域时，在多个监视用半导体层上监测氧化条件的第二工序，以及控制上述选择氧化区域的氧化的第三工序 由此监测的氧化条件的基础。

公开(公告)号：US5588016A

公开(公告)日：1996-12-24

申请号：US523389

申请日：1995-09-05

申请人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

发明人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/3206 ,  H01S5/321 ,  H01S5/32325 ,  H01S5/34326

摘要： A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the semiconductor layers of the contact layer and the lower part of the contact layer by diffusing Si into the structure from above the intermediate layer, characterized in that the contact layer and the intermediate layer are made of n-type or nonconductive semiconductor material, and a p-type low-resistance region, formed by diffusing Zn into the structure from above the contact layer, is profiled so as not to overlap with the mixed-crystal region formed by Si diffusion.

摘要翻译： 在n型GaAs衬底上依次形成有n型包覆层，量子阱有源层106，p型覆层，中间层的半导体层的半导体激光器件，混合 通过从中间层的上方将Si扩散到结构体中，在接触层的半导体层和接触层的下部之间的区域中形成晶体，其特征在于，接触层和中间层由n- 型或非导电半导体材料，以及通过从接触层上方将Zn扩散到结构中形成的p型低电阻区域，以与Si扩散形成的混合晶体区域不重叠。

公开(公告)号：US5880766A

公开(公告)日：1999-03-09

申请号：US751674

申请日：1996-11-18

申请人： Akemi Murakami ,  Kaoru Yasukawa ,  Hideo Nakayama ,  Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Yasuji Seko ,  Mario Fuse

发明人： Akemi Murakami ,  Kaoru Yasukawa ,  Hideo Nakayama ,  Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Yasuji Seko ,  Mario Fuse

IPC分类号： B41J2/44 ,  G06K15/12 ,  H04N1/04 ,  H04N1/047 ,  H04N1/12 ,  H04N1/193 ,  G03G15/04

CPC分类号： H04N1/047 ,  G06K15/1238 ,  H04N1/1932 ,  H04N1/12 ,  H04N1/193 ,  H04N2201/046 ,  H04N2201/04729 ,  H04N2201/04755

摘要： An apparatus for correcting positional deviation of the light source emitting light beams in an image recording apparatus is disclosed which corrects change of the image size (dimensions of the image) on the photosensitive member due to positional deviations of beam spots on the photosensitive member on account of physical distortions caused by external vibration, temperature change, and the like. Changes in the diameter of detective light beams are measured by photodetecting portions 5.sub.R and 5.sub.L and piezoelectric devices 6a and 6b are driven based on the results of the detection, whereby the semiconductor laser array 1 is moved so that the multiplication b/a for the image size may be kept constant.

摘要翻译： 公开了一种用于校正图像记录装置中的光源发射光束的位置偏差的装置，其用于校正由于光敏部件上光束部件上的光束点的位置偏差导致的感光部件上的图像尺寸（尺寸）的变化 由外部振动，温度变化等引起的物理失真。 通过光检测部5R和5L测量检测光束的直径变化，并且基于检测结果来驱动压电器件6a和6b，由此使半导体激光器阵列1移动，使得图像的乘法b / a 尺寸可能保持不变。

公开(公告)号：US5394425A

公开(公告)日：1995-02-28

申请号：US201342

申请日：1994-02-24

申请人： Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Hideo Nakayama

发明人： Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Hideo Nakayama

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/22 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/2226 ,  H01S5/223

摘要： The method applies to manufacture of a semiconductor laser device which comprises a semiconductor substrate and a plurality of semiconductor layers piled sequentially one on top of another on the semiconductor substrate, the semiconductor layers including at least a first clad layer; an active layer interposed between a pair of optical waveguide layers, and a second clad layer. In the present manufacturing method, a first impurity diffusion source film is applied on top of the semiconductor layers, an insulation film is applied on top of the first impurity diffusion source film, two layers consisting of the first impurity diffusion source film and insulation film are removed respectively into a stripe shape except for the areas of the semiconductor layers in which impurities are to be diffused, a diffusion protect film to be etched selectively with respect to the insulation film is formed on the surfaces of the semiconductor layers and two layers, an impurity is thermally diffused from the first impurity diffusion source film, a diffusion protect film is etched selectively with respect to the insulation film, and a second impurity is diffused with the insulation film as a mask.

摘要翻译： 该方法适用于半导体激光器件的制造，该半导体激光器件包括半导体衬底和在半导体衬底上依次堆叠在一起的多个半导体层，半导体层至少包括第一覆盖层; 介于一对光波导层之间的有源层和第二覆层。 在本制造方法中，将第一杂质扩散源膜施加在半导体层的顶部，在第一杂质扩散源膜的顶部施加绝缘膜，由第一杂质扩散源膜和绝缘膜构成的两层 除去杂质要扩散的半导体层的区域以外的条纹状，在半导体层和两层的表面上形成相对于绝缘膜选择性地蚀刻的扩散保护膜， 杂质从第一杂质扩散源膜热扩散，相对于绝缘膜选择性地蚀刻扩散保护膜，第二杂质以绝缘膜作为掩模扩散。

公开(公告)号：US5533042A

公开(公告)日：1996-07-02

申请号：US317594

申请日：1994-10-03

申请人： Hideki Fukunaga ,  Kaoru Yasukawa ,  Hideo Nakayama ,  Nobuaki Ueki ,  Hiromi Otoma ,  Mario Fuse

发明人： Hideki Fukunaga ,  Kaoru Yasukawa ,  Hideo Nakayama ,  Nobuaki Ueki ,  Hiromi Otoma ,  Mario Fuse

IPC分类号： G11B7/09 ,  G11B7/125 ,  H01S5/042 ,  H01S5/062 ,  H01S5/20 ,  H01S5/40 ,  H01S3/18 ,  G11B7/00

CPC分类号： G11B7/127 ,  G11B7/0901 ,  H01S5/0425 ,  H01S5/20 ,  H01S5/06243 ,  H01S5/4031

摘要： A semiconductor laser device which allows high speed correction of the position of a laser spot on an optical disk is disclosed. The semiconductor laser device comprises an active layer which oscillates a laser beam when electric current is supplied thereto, and a plurality of independent electrodes for varying the current density distribution in the active layer to vary the intensity distribution of the laser beam to be emitted from an emergent face of the semiconductor laser device. With the semiconductor laser device, by supplying electric currents individually from the plurality of independent electrodes to vary the current density distribution in the active layer, the beam spot position can be corrected within the frequency bandwidth of several tens MHz by direct modulation of the semiconductor laser device. Also a driving method for the semiconductor laser device and a tracking servo system in which the semiconductor laser device is incorporated are disclosed.

摘要翻译： 公开了一种允许高速校正光盘上的激光点位置的半导体激光器件。 半导体激光器件包括在向其提供电流时使激光束振荡的有源层，以及用于改变有源层中的电流密度分布的多个独立电极，以改变激光束的发射强度分布 半导体激光装置的紧急面。 利用半导体激光装置，通过从多个独立电极分别供给电流来改变有源层中的电流密度分布，可以通过半导体激光器的直接调制在数十MHz的频带内修正光束位置 设备。 还公开了半导体激光器件的驱动方法和其中结合半导体激光器件的跟踪伺服系统。