Abstract:
Embodiments of the present invention are directed to nitride-based, red-emitting phosphors in red, green, and blue (RGB) lighting systems, which in turn may be used in backlighting displays and warm white-light applications. In particular embodiments, the red-emitting phosphor is based on CaAlSiN3 type compounds activated with divalent europium. In one embodiment, the nitride-based, red emitting compound contains a solid solution of calcium and strontium compounds (Ca,Sr)AlSiN3:Eu2+, wherein the impurity oxygen content is less than about 2 percent by weight. In another embodiment, the (Ca,Sr)AlSiN3:Eu2+ compounds further contains a halogen in an amount ranging from about zero to about 2 atomic percent, where the halogen may be fluorine (F), chlorine (Cl), or any combination thereof. In one embodiment at least half of the halogen is distributed on 2-fold coordinated nitrogen (N2) sites relative to 3-fold coordinated nitrogen (N3) sites.
Abstract:
A solid-state lamp is described that includes a wavelength conversion component located at one end of the lamp. The solid-state lamp comprises: one or more solid-state light emitting devices (typically LEDs); a thermally conductive body; at least one duct; and a photoluminescence wavelength conversion component remote to the one or more LEDs, located at one end of the lamp. The lamp is configured such that the duct extends through the photoluminescence wavelength conversion component and defines a pathway for thermal airflow through the thermally conductive body to thereby provide cooling of the body and the one or more LEDs.
Abstract:
Phosphors comprising a nitride-based composition represented by the chemical formula: M(x/v)(M′aM″b)Si(c-x)AlxNd:RE, wherein: M is a divalent or trivalent metal with valence v; M′ is at least one divalent metal; M″ is at least one trivalent metal; 2a+3b+4c=3d; and RE is at least one element selected from the group consisting of Eu, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb. Furthermore, the nitride-based composition may have the general crystalline structure of M′aM″bSicNd, where Al substitutes for Si within the crystalline structure and M is located within the crystalline structure substantially at the interstitial sites.
Abstract translation:包含由化学式M(x / v)(M'aM'b)Si(c-x)Al x N d:RE表示的基于氮化物的组合物的荧光体,其中:M是价数v的二价或三价金属; M'是至少一种二价金属; M“是至少一种三价金属; 2a + 3b + 4c = 3d; RE为选自Eu,Ce,Pr,Nd,Sm,Gd,Tb,Dy,Ho,Er,Tm,Yb中的至少一种元素。 此外,基于氮化物的组合物可以具有M'M''bSicNd的一般结晶结构,其中Al代替晶体结构内的Si,M基本上位于间隙位置的晶体结构内。
Abstract:
Methods and systems for spatially resolved spin resonance detection in a sample of material are disclosed. Also disclosed are methods and systems for spatially resolved impedance measurements in a sample of material. The disclosed methods and samples can be used in screening of plurality of biological, chemical and material samples.