Full Spectrum White Light Emitting Devices

    公开(公告)号:US20250054919A1

    公开(公告)日:2025-02-13

    申请号:US18427182

    申请日:2024-01-30

    Abstract: A device may include a broadband LED flip chip that generates broadband light of dominant wavelength from about 420 nm to about 480 nm and a FWHM from 25 nm to 50 nm; and at least one photoluminescence layer covering a light emitting face of the broadband LED flip chip; wherein the broadband LED flip chip comprises a broadband InGaN/GaN multiple quantum wells LED chip comprising multiple different wavelength quantum wells in its active region that generate multiple narrowband light emissions of multiple different wavelengths, where broadband light generated by the broadband LED flip chip includes a combination of the multiple narrowband light emissions, and where at least one photoluminescence material layer comprises a first photoluminescence material which generates light with a peak emission wavelength from 490 nm to 550 nm; and a second photoluminescence material which generates light with a peak emission wavelength from 600 nm to 680 nm.

    Color Liquid Crystal Displays and Display Backlights

    公开(公告)号:US20200264361A1

    公开(公告)日:2020-08-20

    申请号:US16791702

    申请日:2020-02-14

    Abstract: There is provided a display backlight (604), including an excitation source (644) for generating blue light (650); and a wavelength converter (654) being a unitary construction including a combination of a wavelength selective filter layer (658) bonded to a photoluminescence layer (660), where the photoluminescence layer (658) includes a green photoluminescence material and a red photoluminescence material; and where the wavelength selective filter layer (658) is transmissive to blue light and reflective to green and red light.

    Full spectrum white light emitting devices

    公开(公告)号:US11887973B2

    公开(公告)日:2024-01-30

    申请号:US18106442

    申请日:2023-02-06

    Abstract: There is provided a full spectrum white light emitting device comprising: a broadband LED flip chip that generates broadband light of dominant wavelength from about 420 nm to about 480 nm and a FWHM from 25 nm to 50 nm; and at least one photoluminescence layer covering a light emitting face of the broadband LED flip chip; wherein the broadband LED flip chip comprises a broadband InGaN/GaN multiple quantum wells LED chip comprising multiple different wavelength quantum wells in its active region that generate multiple narrowband light emissions of multiple different wavelengths and wherein broadband light generated by the broadband LED flip chip is composed of a combination of the multiple narrowband light emissions, and wherein the at least one photoluminescence material layer comprises a first photoluminescence material which generates light with a peak emission wavelength from 490 nm to 550 nm; and a second photoluminescence material which generates light with a peak emission wavelength from 600 nm to 680 nm.

    Color Liquid Crystal Displays and Display Backlights

    公开(公告)号:US20220019012A1

    公开(公告)日:2022-01-20

    申请号:US17374739

    申请日:2021-07-13

    Abstract: A display backlight, comprises: an excitation source, LED (146), for generating blue excitation light (148) with a peak emission wavelength in a wavelength range 445 nm to 465 nm; and a photoluminescence wavelength conversion layer (152). The photoluminescence wavelength conversion layer (152) comprises a mixture of a green-emitting photoluminescence material with a peak emission in a wavelength range 530 nm to 545 nm, a red-emitting photoluminescence material with a peak emission in a wavelength range 600 nm to 650 nm and particles of light scattering material.

    Full Spectrum White Light Emitting Devices
    10.
    发明申请

    公开(公告)号:US20200347999A1

    公开(公告)日:2020-11-05

    申请号:US16909921

    申请日:2020-06-23

    Abstract: A full spectrum white light emitting device may include a broadband solid-state excitation source for generating broadband excitation light with a dominant wavelength from about 420 nm to about 480 nm and a full width at half maximum intensity greater than about 25 nm; and a narrowband red photoluminescence material with an emission peak wavelength from about 620 nm to about 640 nm and a full width at half maximum emission intensity of less than about 30 nm; where the device has an efficacy of at least 130 lm/W and generates white light with a CRI Ra≥90, and where over a wavelength range from about 430 nm to about 520 nm, a maximum percentage intensity deviation of the white light from the intensity of light of a black-body curve or CIE Standard Illuminant D of the same Correlated Color Temperature is less than about 50%.

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