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1.
公开(公告)号:US20180240594A1
公开(公告)日:2018-08-23
申请号:US15900084
申请日:2018-02-20
申请人: TDK CORPORATION
发明人: Ryota NOMURA , Hiroki AKIBA , Sanshiro AMAN , Tetsuhiro TAKAHASHI
CPC分类号: H01G4/1227 , C04B35/465 , C04B35/4686 , C04B35/47 , C04B35/49 , C04B35/495 , C04B35/6261 , C04B35/6262 , C04B35/638 , C04B35/64 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3232 , C04B2235/3239 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3262 , C04B2235/3287 , C04B2235/3409 , C04B2235/3418 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/6582 , H01G4/008 , H01G4/012 , H01G4/1236 , H01G4/1254 , H01G4/1263 , H01G4/30
摘要: A dielectric composition comprising a main component expressed by a chemical formula of (A6-xBxCx+2D8-xO30, 0≤x≤5), wherein said “A” component is at least one element selected form the group consisting of Ba, Ca, and Sr, said “B” component is at least one element selected from the group consisting of Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, said “C” component is at least one element selected from the group consisting of Ti, and Zr, said “D” component is at least one element selected from the group consisting of Nb, and Ta, and said dielectric composition comprises 2.50 mol or more and 20.00 mol or less of an oxide of Ge as a first sub component with respect to 100 mol of said main component.
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公开(公告)号:US09944849B2
公开(公告)日:2018-04-17
申请号:US14840449
申请日:2015-08-31
发明人: Joerg Meyer , Volker Weiler , Peter J. Schmidt
IPC分类号: H01L33/00 , C09K11/64 , C09K11/77 , H01L33/50 , C04B35/553
CPC分类号: C09K11/645 , C04B35/553 , C04B2235/3201 , C04B2235/3203 , C04B2235/3206 , C04B2235/3217 , C04B2235/3224 , C04B2235/3241 , C04B2235/3262 , C04B2235/3272 , C04B2235/3286 , C04B2235/3409 , C04B2235/5292 , C04B2235/5436 , C04B2235/764 , C09K11/7774 , H01L33/502 , H01L33/505 , H01L33/507
摘要: The invention provides a light emitting diode device comprising a light emitting diode arranged on a substrate and a wavelength converting element. The wavelength converting element contains as a luminescent material a Mn4+-activated fluoride compound having a garnet-type crystal structure. The Mn4+-activated fluoride compound preferably answers the general formula {A3}[B2-x-yMnxMgy](Li3)F12-dOd, in which formula A stands for at least one element selected from the series consisting of Na+ and K+ and B stands for at least one element selected from the series consisting of Al3+, B3+, Sc3+, Fe3+, Cr3+, Ti4+ and In3+, and in which formula x ranges between 0.02 and 0.2, y ranges between 0.0 (and incl. 0.0) and 0.4 and d ranges between 0 (and incl. 0) and 1. Said compound is most preferably {Na3}[Al2-x-yMnxMgy](Li3)F12-dOd.
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公开(公告)号:US09939579B2
公开(公告)日:2018-04-10
申请号:US11358238
申请日:2006-02-21
申请人: Michael A. Bryan , Xiangxin Bi
发明人: Michael A. Bryan , Xiangxin Bi
IPC分类号: C23C16/48 , B05D5/06 , G02B6/02 , G02B6/12 , B32B9/04 , C03B19/14 , C03B37/014 , C03B37/027 , C04B35/14 , C23C26/00 , G02B6/13 , G02B6/132
CPC分类号: G02B6/12002 , B32B9/04 , C03B19/1415 , C03B19/1423 , C03B19/1484 , C03B37/01413 , C03B37/0142 , C03B37/01486 , C03B37/027 , C03B2203/34 , C03B2205/40 , C03B2207/02 , C03B2207/34 , C03B2207/66 , C03B2207/85 , C04B35/14 , C04B2235/3201 , C04B2235/3203 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3232 , C04B2235/3234 , C04B2235/3244 , C04B2235/3251 , C04B2235/3258 , C04B2235/3287 , C04B2235/3293 , C04B2235/3294 , C04B2235/3296 , C04B2235/3298 , C04B2235/3409 , C04B2235/3418 , C04B2235/3463 , C23C16/483 , C23C26/00 , G02B6/02042 , G02B6/13 , G02B6/132 , G02B2006/12147 , G02B2006/1215 , G02B2006/12176 , Y02P40/57
摘要: Monolithic optical structures include a plurality of layer with each layer having an isolated optical pathway confined within a portion of the layer. The monolithic optical structure can be used as an optical fiber preform. Alternatively or additionally, the monolithic optical structure can include integrated optical circuits within one or more layers of the structure. Monolithic optical structures can be formed by performing multiple passes of a substrate through a flowing particle stream. The deposited particles form an optical material following consolidation. Flexible optical fibers include a plurality of independent light channels extending along the length of the optical fiber. The fibers can be pulled from an appropriate preform.
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4.
公开(公告)号:US20180094182A1
公开(公告)日:2018-04-05
申请号:US15724849
申请日:2017-10-04
发明人: Ching-Cheh Hung , Janet B. Hurst
IPC分类号: C09K5/14 , C04B35/583 , C04B35/628 , C04B35/645
CPC分类号: C09K5/14 , C01B21/0648 , C01P2002/82 , C01P2004/03 , C01P2004/04 , C01P2004/80 , C04B35/583 , C04B35/6264 , C04B35/62675 , C04B35/62805 , C04B35/62807 , C04B35/6281 , C04B35/62813 , C04B35/62818 , C04B35/62821 , C04B35/62823 , C04B35/62826 , C04B35/62852 , C04B35/62897 , C04B35/645 , C04B2235/3215 , C04B2235/3217 , C04B2235/3236 , C04B2235/3272 , C04B2235/3409 , C04B2235/36 , C04B2235/386 , C04B2235/444 , C04B2235/445 , C04B2235/5252 , C04B2235/5284 , C04B2235/656 , C04B2235/6562 , C04B2235/6565 , C04B2235/6583 , C04B2235/77 , C04B2235/9607 , H01L37/025 , H01L41/183
摘要: A material that facilitates dissipation of heat is provided and includes hexagonal boron nitride and alumina.
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公开(公告)号:US09896383B2
公开(公告)日:2018-02-20
申请号:US15307873
申请日:2014-11-26
申请人: Saint-Gobain TM K.K.
IPC分类号: C04B35/484 , C04B35/49 , C03B5/43
CPC分类号: C04B35/49 , C03B5/43 , C04B35/484 , C04B2235/3201 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3225 , C04B2235/3232 , C04B2235/3244 , C04B2235/3272 , C04B2235/3281 , C04B2235/3293 , C04B2235/34 , C04B2235/3409 , C04B2235/3418 , C04B2235/6565 , C04B2235/667 , C04B2235/72 , C04B2235/727 , C04B2235/9669
摘要: A high zirconia electrically fused cast refractory having long time durability with less cracking during production and in the course of temperature rising, excellent in productivity, less forming zircon crystals in the refractory itself and even in contact with molten glass, excellent in bubble foamability to molten glass, less generating cracks even undergoing heat cycles during operation of a glass melting furnace. A high zirconia electrically fused cast refractory comprises, as chemical component, 85 to 95% by weight of ZrO2, 0.4 to 2.5% by weight of Al2O3, 3.5 to 10.0% by weight of SiO2, 0.05% by weight or more of Na2O, 0.05 to 0.7% by weight of Na2O and K2O in total, 0.01 to 0.04% by weight of B2O3, 0.1 to 3.0% by weight of SrO or BaO when one of BaO and SrO is contained, 0.1% by weight or more of SrO and 0.1 to 3.0% by weight of SrO and BaO in total when both of BaO and SrO are contained, 0.01 to 0.2% by weight of CaO, 0.1% by weight or less of MgO, 0.01 to 0.7% by weight of SnO2, 0.3% by weight or less of Fe2O3 and TiO2 in total, less than 0.01% by weight of P2O5, and less than 0.01% by weight of CuO.
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公开(公告)号:US09892853B2
公开(公告)日:2018-02-13
申请号:US15301737
申请日:2015-06-12
申请人: Ferro Corporation
发明人: Walter J. Symes, Jr. , Gregory R. Prinzbach , John J. Maloney , James E. Henry , Orville W. Brown , Srinivasan Sridharan , Yie-Shein Her , Stanley Wang , George E. Graddy, Jr. , George E. Sakoske
IPC分类号: C04B35/465 , H01G4/12 , C04B35/626 , C04B35/478 , C04B35/475 , C04B35/468 , C04B35/453 , C04B35/22 , C04B35/16 , C04B35/195 , C04B35/18 , C04B35/622 , C04B35/64 , C03C8/18 , C09D5/24
CPC分类号: H01G4/129 , C03C8/18 , C04B35/16 , C04B35/18 , C04B35/195 , C04B35/22 , C04B35/453 , C04B35/465 , C04B35/468 , C04B35/4682 , C04B35/475 , C04B35/478 , C04B35/62218 , C04B35/6263 , C04B35/64 , C04B2235/3203 , C04B2235/3208 , C04B2235/3215 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3236 , C04B2235/3281 , C04B2235/3284 , C04B2235/3298 , C04B2235/3409 , C04B2235/3418 , C04B2235/3436 , C04B2235/445 , C04B2235/6025 , C04B2235/608 , C04B2235/72 , C04B2235/725 , C04B2235/77 , C09D5/24 , H01G4/105 , H01G4/12 , H01G4/1209 , H01G4/1227
摘要: LTCC devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a matrix of titanates of alkaline earth metals, the matrix doped with at least one selected from rare-earth element, aluminum oxide, silicon oxide and bismuth oxide.
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公开(公告)号:US20180037509A1
公开(公告)日:2018-02-08
申请号:US15552015
申请日:2016-02-19
IPC分类号: C04B35/484 , C04B35/657
CPC分类号: C04B35/484 , C04B35/657 , C04B2235/3201 , C04B2235/3208 , C04B2235/3213 , C04B2235/3217 , C04B2235/3218 , C04B2235/3225 , C04B2235/3232 , C04B2235/3244 , C04B2235/3272 , C04B2235/3409 , C04B2235/3418 , C04B2235/447 , C04B2235/6022 , C04B2235/656 , C04B2235/727 , C04B2235/9607
摘要: A fused-cast refractory product including, as mass percentages on the basis of the oxides and for a total of 100% of the oxides: ZrO2+HfO2: remainder to 100%, with HfO2≦5%; SiO2: 1.5% to 7.5%; Al2O3: 1.0% to 3.0%; CaO+SrO: 1.2% to 3.0%; Y2O3: 1.5% to 3.0%; Na2O+K2O:
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8.
公开(公告)号:US09879338B2
公开(公告)日:2018-01-30
申请号:US14659866
申请日:2015-03-17
CPC分类号: C23C14/3414 , C01F7/002 , C01F7/164 , C01P2006/40 , C04B35/117 , C04B35/44 , C04B35/64 , C04B2235/3208 , C04B2235/3213 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3232 , C04B2235/3241 , C04B2235/3262 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3286 , C04B2235/3287 , C04B2235/3409 , C04B2235/3418 , C04B2235/402 , C04B2235/445 , C04B2235/46 , C04B2235/652 , C04B2235/658 , C04B2235/6581 , C04B2235/6587 , C04B2235/664 , C04B2235/77 , H01B1/08
摘要: A method of manufacturing an electrically conductive mayenite compound, includes preparing a body to be processed including a mayenite compound; and placing the body to be processed in the presence of carbon monoxide gas and aluminum vapor supplied from an aluminum source without being in contact with the aluminum source and retaining the body to be processed at a temperature range of 1080° C. to 1450° C. under a reducing atmosphere.
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公开(公告)号:US20180012739A1
公开(公告)日:2018-01-11
申请号:US15642652
申请日:2017-07-06
IPC分类号: H01J37/34 , B28B1/00 , H01L29/24 , H01L27/12 , H01L21/02 , B28B11/24 , C23C14/08 , C23C14/34 , H01L29/786 , H01L29/66 , G02F1/1368 , G02F1/1333 , G02F1/1335
CPC分类号: H01J37/3429 , B28B1/008 , B28B11/24 , C04B35/01 , C04B35/453 , C04B35/58 , C04B2235/3205 , C04B2235/3206 , C04B2235/3217 , C04B2235/3232 , C04B2235/3239 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3279 , C04B2235/3284 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/3409 , C04B2235/3418 , C04B2235/3852 , C04B2235/72 , C04B2235/781 , C04B2235/785 , C04B2235/786 , C04B2235/80 , C23C14/086 , C23C14/3414 , G02F1/133345 , G02F1/133514 , G02F1/133553 , G02F1/1368 , G02F2203/02 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L27/127 , H01L29/24 , H01L29/42384 , H01L29/66969 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要: A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.
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10.
公开(公告)号:US09741477B2
公开(公告)日:2017-08-22
申请号:US15101650
申请日:2014-12-05
申请人: HITACHI METALS, LTD.
发明人: Naoyuki Okamoto , Hiroyuki Ito , Toshiki Kida
IPC分类号: H05K1/03 , H01C7/112 , H01C17/065 , H01C17/30 , B32B18/00 , C04B35/453 , H05K1/02 , C04B35/64 , H01C1/14
CPC分类号: H01C7/112 , B32B18/00 , B32B2307/206 , B32B2457/00 , C04B35/453 , C04B35/64 , C04B2235/3215 , C04B2235/3224 , C04B2235/3241 , C04B2235/3262 , C04B2235/3263 , C04B2235/3275 , C04B2235/3277 , C04B2235/3284 , C04B2235/3298 , C04B2235/3409 , C04B2235/656 , C04B2235/72 , C04B2237/34 , C04B2237/62 , H01C1/14 , H01C17/06546 , H01C17/30 , H05K1/0254 , H05K2201/0738
摘要: To provide a zinc oxide-based varistor that exhibits adequate characteristics without using antimony. Disclosed is a sintered body for a varistor, including zinc oxide as a main component; 0.6 to 3.0 mol % of bismuth oxide in terms of bismuth (Bi); 0.2 to 1.4 mol % of cobalt oxide in terms of cobalt (Co); 0.1 to 1.5 mol % of chrome oxide in terms of chrome (Cr); and 0.1 to 1.5 mol % of manganese oxide in terms of manganese (Mn), wherein the contents of antimony (Sb), a rare earth element and tin (Sn) are not more than a level of impurities.
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