公开(公告)号：US20170243975A1

公开(公告)日：2017-08-24

申请号：US15589259

申请日：2017-05-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsueh-Chang Sung ,  Tsz-Mei Kwok ,  Kun-Mu Li ,  Tze-Liang Lee ,  Chii-Horng Li

IPC: H01L29/78 ,  H01L29/04 ,  H01L21/324 ,  H01L21/02 ,  H01L29/165 ,  H01L29/08 ,  H01L29/66

CPC classification number: H01L29/7848 ,  H01L21/02057 ,  H01L21/02532 ,  H01L21/324 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7833

Abstract: The present disclosure relates to a transistor device having a strained source/drain region. In some embodiments, the transistor device has a gate structure arranged over a semiconductor substrate. The transistor device also has a strained source/drain region arranged within the semiconductor substrate along a side of the gate structure. The strained source/drain region includes a first layer and a second layer over the first layer. The first layer has a strain inducing component with a first concentration profile that decreases as a distance from the second layer decreases, and the second layer has the strain inducing component with a second non-zero concentration profile that is discontinuous with the first concentration profile.