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211.
公开(公告)号:US20190228816A1
公开(公告)日:2019-07-25
申请号:US16375073
申请日:2019-04-04
Applicant: Micron Technology, Inc.
Inventor: George B. Raad , Jonathan S. Parry , James S. Rehmeyer , Timothy B. Cowles
IPC: G11C11/406
CPC classification number: G11C11/40618 , G11C11/005 , G11C11/1675 , G11C11/2275 , G11C13/0033 , G11C13/0069
Abstract: Memory devices, systems including memory devices, and methods of operating memory devices in which multiple counters are provided to permit memory refresh commands greater freedom in targeting subsets of the memory device for data refresh operations. In one embodiment, a memory device is provided, comprising a plurality of memory banks, and circuitry configured to (i) store a plurality of values, each of the plurality of values corresponding to one of the plurality of memory banks; (ii) refresh first data stored in a first one of the plurality of memory banks; and (iii) update a first one of the plurality of values corresponding to the first one of the plurality of memory banks based at least in part on refreshing the first data.
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212.
公开(公告)号:US10297309B1
公开(公告)日:2019-05-21
申请号:US16015441
申请日:2018-06-22
Applicant: Micron Technology, Inc.
Inventor: George B. Raad , Jonathan S. Parry , James S. Rehmeyer , Timothy B. Cowles
IPC: G11C7/00 , G11C11/406
Abstract: Memory devices, systems including memory devices, and methods of operating memory devices in which multiple counters are provided to permit memory refresh commands greater freedom in targeting subsets of the memory device for data refresh operations. In one embodiment, a memory device is provided, comprising a plurality of memory banks, and circuitry configured to (i) store a plurality of values, each of the plurality of values corresponding to one of the plurality of memory banks; (ii) refresh first data stored in a first one of the plurality of memory banks; and (iii) update a first one of the plurality of values corresponding to the first one of the plurality of memory banks based at least in part on refreshing the first data.
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