公开(公告)号：US20130295716A1

公开(公告)日：2013-11-07

申请号：US13980037

申请日：2012-01-04

Applicant: Shinichi Kawato ,  Satoshi Inoue ,  Tohru Sonoda

Inventor： Shinichi Kawato ,  Satoshi Inoue ,  Tohru Sonoda

IPC: H01L51/00

CPC classification number: H01L51/0008 ,  C23C14/042 ,  C23C14/044 ,  C23C14/12 ,  C23C14/243 ,  H01L51/001 ,  H01L51/56

Abstract: First and second vapor deposition particles (91a, 91b) discharged from first and second vapor deposition source openings (61a, 61b) pass through first and second limiting openings (82a, 82b) of a limiting plate unit (80), pass through mask opening (71) of a vapor deposition mask (70) and adhere to a substrate (10) so as to form a coating film. If regions on the substrate to which the first vapor deposition particles and the second vapor deposition particles adhere if the vapor deposition mask is assumed not to exist are respectively denoted by a first region (92a) and a second region (92b), the limiting plate unit limits the directionalities of the first vapor deposition particles and the second vapor deposition particles in a first direction (10a) that travel to the substrate such that the second region is contained within the first region. Accordingly, it is possible to form a light emitting layer with a doping method by using vapor deposition by color.

Abstract translation: 从第一和第二气相沉积源开口（61a，61b）排出的第一和第二蒸镀颗粒（91a，91b）穿过限制板单元（80）的第一和第二限制开口（82a，82b），通过掩模开口 （70）的表面（71）并粘附到基底（10）上以形成涂膜。 如果假设不存在气相沉积掩模，则第一气相沉积颗粒和第二气相沉积颗粒附着的基板上的区域分别由第一区域（92a）和第二区域（92b）表示，限制板 单元限制第一气相沉积颗粒和第二气相沉积颗粒在向基板移动的第一方向（10a）上的方向性，使得第二区域包含在第一区域内。 因此，可以通过使用通过颜色的气相沉积形成具有掺杂方法的发光层。

公开(公告)号：US20130285038A1

公开(公告)日：2013-10-31

申请号：US13979845

申请日：2012-01-12

Applicant: Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

Inventor： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC: H01L51/50

CPC classification number: H01L51/5036 ,  C23C14/042 ,  C23C14/24 ,  H01L27/3276 ,  H01L51/001 ,  H01L51/0011 ,  H01L2227/323

Abstract: On the TFT substrate (10), a vapor deposition layer is formed by use of a vapor deposition device (50) which includes (i) a vapor deposition source (85) having injection holes (86) and (ii) a vapor deposition mask (81) having openings (82) through which vapor deposition particles injected from the injection holes (86) are deposited so as to form the vapor deposition layer. The TFT substrate (10) has a plurality of pixels two-dimensionally arranged in a pixel region (AG), and terminals of a plurality of wires (14), which are electrically connected with the plurality of pixels, are gathered outside a vapor deposition layer formation region.

Abstract translation: 在TFT基板（10）上，通过使用蒸镀装置（50）形成蒸镀层，该蒸镀装置包括：（i）具有喷射孔（86）的蒸镀源（85）和蒸镀掩模 （81），其具有开口（82），沉积从喷射孔（86）喷射的气相沉积颗粒以形成气相沉积层。 TFT基板（10）具有像素区域（AG）二维排列的多个像素，并且与多个像素电连接的多根电线（14）的端子聚集在气相沉积 层形成区域。

公开(公告)号：US20130260501A1

公开(公告)日：2013-10-03

申请号：US13993677

申请日：2011-12-14

Applicant: Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

Inventor： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC: H01L51/00

CPC classification number: H01L51/56 ,  C23C14/12 ,  C23C14/24 ,  C23C14/243 ,  H01L27/3211 ,  H01L51/0008 ,  H01L51/0011 ,  H01L51/0012 ,  H01L51/0021 ,  H01L51/5203 ,  H01L51/5253 ,  H05B33/04 ,  H05B33/10

Abstract: A vapor deposition device (50) in accordance with the present invention includes: a vapor deposition source (80) which has a plurality of injection holes (81) from which vapor deposition particles are to be injected towards a film formation substrate (60); a plurality of pipes (83a and 83b); a vapor deposition source crucible (82) for supplying the vapor deposition particles to the vapor deposition source (80); and moving means for moving the film formation substrate (60) relative to the vapor deposition source (80). The pipes (83a and 83b) are connected to first and second sides of the vapor deposition source (80) on one end side and the other end side, respectively, of a line of the injection holes (81).

Abstract translation: 根据本发明的气相沉积装置（50）包括：气相沉积源（80），其具有多个喷射孔（81），气相沉积颗粒将从该注入孔向成膜基底（60）注入; 多个管道（83a和83b）; 用于将气相沉积颗粒供应到气相沉积源（80）的蒸镀源坩埚（82）; 以及用于相对于气相沉积源（80）移动成膜衬底（60）的移动装置。 管道（83a和83b）分别在喷射孔（81）的一行的一端侧和另一端侧连接到气相沉积源（80）的第一和第二侧。

公开(公告)号：US20130260499A1

公开(公告)日：2013-10-03

申请号：US13992613

申请日：2011-12-07

Applicant: Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

Inventor： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC: H01L51/00

CPC classification number: H01L51/0008 ,  C23C14/24 ,  C23C14/243 ,  C23C14/246 ,  C23C14/568 ,  H01L27/3211 ,  H01L51/56

Abstract: A vapor deposition device (50) in accordance with the present invention is a vapor deposition device for forming a film on a film formation substrate (60), including: a vapor deposition source (91) which has a plurality of injection holes (92) from which vapor deposition particles are to be injected towards the film formation substrate (60), the plurality of injection holes (92) being arranged in a line or in a plurality of lines; a vapor deposition crucible (93) for supplying the vapor deposition particles to the vapor deposition source (91) via a pipe (94), the pipe being connected to the vapor deposition source (91) on a side where one end of the line(s) of the plurality of injection holes (92) is located; moving means for moving the film formation substrate (60) relative to the vapor deposition source(s) (91); and a rotation mechanism (100) for rotating the vapor deposition source (91).

Abstract translation: 根据本发明的蒸镀装置（50）是在成膜基板（60）上形成膜的蒸镀装置，其特征在于，包括：具有多个喷射孔（92）的蒸镀源（91） 从该气相沉积粒子向成膜基板（60）喷射，多个喷射孔（92）以一行或多条线排列; 一种用于通过管道（94）将气相沉积颗粒供应到气相沉积源（91）的气相沉积坩埚（93），该管道连接到气相淀积源（91）的一端 （92）的位置; 用于相对于气相沉积源（91）移动成膜衬底（60）的移动装置; 以及用于旋转气相沉积源（91）的旋转机构（100）。

公开(公告)号：US20130252364A1

公开(公告)日：2013-09-26

申请号：US13989704

申请日：2011-12-15

Applicant: Shinichi Kawato ,  Satoshi Inoue ,  Tohru Sonoda

Inventor： Shinichi Kawato ,  Satoshi Inoue ,  Tohru Sonoda

IPC: H01L51/56

CPC classification number: H01L51/56 ,  C23C14/044 ,  C23C14/12 ,  C23C14/562 ,  C23C16/45578 ,  H01L27/3244 ,  H01L51/0011

Abstract: A vapor deposition source (60), a limiting plate unit (80), and a vapor deposition mask (70) are disposed in this order. The limiting plate unit includes a plurality of limiting plates (81) disposed along a first direction. At least a portion of surfaces (83) defining a limiting space (82) of the limiting plate unit and surfaces (84) of the limiting plate unit opposing the vapor deposition source is constituted by at least one outer surface member (110, 120) capable of attaching to and detaching from a base portion (85). Accordingly, a vapor deposition device that is capable of forming a coating film in which edge blur is suppressed on a large-sized substrate and that has excellent maintenance performance can be obtained.

Abstract translation: 依次设置气相沉积源（60），限制板单元（80）和气相沉积掩模（70）。 限位板单元包括沿着第一方向设置的多个限位板（81）。 限定板单元的限制空间（82）的表面的至少一部分和与气相沉积源相对的限制板单元的表面（84）由至少一个外表面构件（110,120）构成， 能够附接到基部（85）并从基部（85）脱离。 因此，可以获得能够形成在大尺寸基板上抑制边缘模糊并且具有优异的维护性能的涂膜的蒸镀装置。

公开(公告)号：US20130196454A1

公开(公告)日：2013-08-01

申请号：US13824859

申请日：2011-10-11

Applicant: Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

Inventor： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

IPC: H01L21/66

CPC classification number: H01L22/20 ,  C23C14/042 ,  C23C14/24 ,  C23C14/54 ,  H01L27/3211 ,  H01L51/001 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A coating film (90) is formed by causing vapor deposition particles (91) discharged from a vapor deposition source opening (61) of a vapor deposition source (60) to pass through a space between a plurality of control plates (81) of a control plate unit (80) and a mask opening (71) of a vapor deposition mask in this order and adhere to a substrate, while the substrate (10) is moved relative to the vapor deposition mask (70) in a state in which the substrate (10) and the vapor deposition mask (70) are spaced apart at a fixed interval. A difference in the amount of thermal expansion between the vapor deposition source and the control plate unit is detected and corrected. It is thereby possible to form, at a desired position on a large-sized substrate, the coating film in which edge blur and variations in the edge blur are suppressed.

Abstract translation: 通过使从气相沉积源（60）的气相沉积源开口（61）排出的气相沉积颗粒（91）通过多个控制板（81）之间的空间，形成涂膜（90） 控制板单元（80）和气相沉积掩模的掩模开口（71），并且在基板（10）相对于蒸镀掩模（70）移动的同时粘附到基板上， 衬底（10）和气相沉积掩模（70）以固定的间隔隔开。 检测并校正蒸镀源与控制板单元之间的热膨胀量的差异。 因此，可以在大尺寸基板的期望位置形成抑制边缘模糊和边缘模糊变化的涂膜。

公开(公告)号：US20130181209A1

公开(公告)日：2013-07-18

申请号：US13824617

申请日：2011-09-15

Applicant: Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue

Inventor： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue

IPC: H01L33/44

CPC classification number: H01L33/44 ,  C23C14/042 ,  C23C14/12 ,  C23C14/24 ,  H01L27/3211 ,  H01L51/0008 ,  H01L51/0011 ,  H01L51/56 ,  H05B33/10

Abstract: A coating film (90) is formed by causing vapor deposition particles (91) to pass through a mask opening (71) of a vapor deposition mask and adhere to a substrate, the vapor deposition particles (91) being discharged from a vapor deposition source opening (61) of a vapor deposition source (60) while the substrate (10) is moved relative to the vapor deposition mask (70) in a state in which the substrate (10) and the vapor deposition mask (70) are spaced apart at a fixed interval. When a direction that is orthogonal to a normal line direction of the substrate and is orthogonal to a relative movement direction of the substrate is defined as a first direction, and the normal line direction of the substrate is defined as a second direction, a plurality of control plate columns are disposed in the first direction between the vapor deposition source opening and the vapor deposition mask, each control plate column including a plurality of control plates (80a and 80b) arranged along the second direction. With this configuration, a coating film in which blur at both edges of the coating film and variations in the blur are suppressed can be formed on a large-sized substrate.

Abstract translation: 通过使气相沉积粒子（91）通过气相沉积掩模的掩模开口（71）并附着到基底上，形成涂膜（90），蒸镀颗粒（91）从气相沉积源 在衬底（10）和气相沉积掩模（70）间隔开的状态下，相对于气相沉积掩模（70）移动衬底（10）的同时，蒸镀源（60）的开口（61） 以固定的间隔。 当将与基板的法线方向正交并与基板的相对移动方向正交的方向定义为第一方向时，将基板的法线方向定义为第二方向， 控制板列在蒸镀源开口和蒸镀掩模之间沿第一方向配置，每个控制板列包括沿第二方向配置的多个控制板（80a，80b）。 利用这种构造，可以在大尺寸的基板上形成其中涂覆膜的两边的模糊和模糊的变化被抑制的涂膜。

公开(公告)号：US08456979B2

公开(公告)日：2013-06-04

申请号：US13250135

申请日：2011-09-30

Applicant: Satoshi Inoue ,  Shuichi Takeuchi

Inventor： Satoshi Inoue ,  Shuichi Takeuchi

IPC: G11B7/135

CPC classification number: G11B7/13922 ,  G11B7/0956 ,  G11B7/1374

Abstract: An optical information recording/reproducing apparatus for an optical disc using a light beam having a wavelength of λ including: an objective lens that converges the light beam onto a recording surface of the optical disc and satisfies a condition: 0.48

Abstract translation: 一种使用波长为λ的光束的光盘的光学信息记录/再现装置，包括：将光束会聚到光盘的记录表面上并满足以下条件的物镜：0.48

公开(公告)号：US20130059063A1

公开(公告)日：2013-03-07

申请号：US13696585

申请日：2011-05-02

Applicant: Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

Inventor： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

IPC: H05B33/10 ,  C23C16/04

CPC classification number: H01L51/001 ,  C23C14/042 ,  C23C14/12 ,  C23C14/24 ,  H01L27/3211 ,  H01L51/56

Abstract: A vapor deposition source (60), a plurality of limiting plates (81) and a vapor deposition mask (70) are disposed in this order. A substrate spaced apart from the vapor deposition mask at a fixed interval is moved relative to the vapor deposition mask. Vapor deposition particles (91) discharged from vapor deposition source openings (61) of the vapor deposition source pass through between neighboring limiting plates, pass through mask openings (71) formed in the vapor deposition mask, and adhere to the substrate, whereby coating films (90) are formed. The limiting plates limit the incidence angle of the vapor deposition particles that enter the mask openings, as viewed in the relative movement direction of the substrate. In this way, an organic EL element can be formed on a large-sized substrate without increasing the pixel pitch or reducing the aperture ratio.

Abstract translation: 蒸镀源（60），多个限制板（81）和气相沉积掩模（70）按此顺序设置。 以固定间隔与蒸镀掩模间隔开的基板相对于蒸镀掩模移动。 从气相沉积源的蒸镀源开口（61）排出的蒸镀颗粒（91）通过相邻的限制板之间通过形成在蒸镀掩模中的掩模开口（71），并附着在基板上， （90）。 限制板限制了进入掩模开口的气相沉积颗粒的入射角，如在基板的相对移动方向上所看到的。 以这种方式，可以在大尺寸基板上形成有机EL元件，而不增加像素间距或降低开口率。

公开(公告)号：US08323852B2

公开(公告)日：2012-12-04

申请号：US12705146

申请日：2010-02-12

Applicant: Kazunori Fukuma ,  Satoshi Inoue

Inventor： Kazunori Fukuma ,  Satoshi Inoue

IPC: H01M8/04 ,  F04F5/00

CPC classification number: H01M8/04097 ,  F04F5/20 ,  F04F5/44 ,  H01M8/04201

Abstract: An ejector comprises a body, a nozzle, a needle, a diffuser which draws in a second fluid using negative pressure caused by ejection of a first fluid from the nozzle and mixes the first and second fluids together, first and second diaphragms which allows the nozzle to shift in an axial direction with respect to the needle, and a first fluid chamber which is supplied with the first fluid. A valve in which a valve body contacts and separates from a valve seat according to the shifting action of the nozzle is formed by providing either the nozzle or the needle with the valve body and providing the other with the valve seat in the first fluid chamber. A back pressure chamber connecting to the first fluid chamber via the valve is provided between a trunk portion of the nozzle and a basal part of the needle.

Abstract translation: 喷射器包括主体，喷嘴，针，扩散器，其使用由喷嘴喷射第一流体而引起的负压并将第一和第二流体混合在一起而吸入第二流体，第一和第二膜片允许喷嘴 相对于针沿轴向移动，以及被供应有第一流体的第一流体室。 根据喷嘴的换档动作，阀体与阀座接触并分离的阀通过使喷嘴或针与阀体相提供，另一方面将阀座设置在第一流体室中而形成。 通过阀连接到第一流体室的背压室设置在喷嘴的主干部分和针的基部之间。