Angled grating couplers with inclined side edge portions

    公开(公告)号:US11567266B1

    公开(公告)日:2023-01-31

    申请号:US17551377

    申请日:2021-12-15

    Abstract: Structures for a grating coupler and methods of fabricating a structure for a grating coupler. The structure includes a grating coupler having a central portion and edge portions. The central portion and the edge portions define a sidewall, and the central portion and the edge portions have a first longitudinal axis along which the edge portions are arranged in a spaced relationship. Each edge portion projects from the sidewall at an angle relative to the first longitudinal axis. A waveguide core is optically coupled to the grating coupler. The first longitudinal axis is aligned in a first direction, and the waveguide core has a second longitudinal axis that is aligned in a second direction different from the first direction.

    Metamaterial edge couplers in the back-end-of-line stack of a photonics chip

    公开(公告)号:US11567261B2

    公开(公告)日:2023-01-31

    申请号:US17173639

    申请日:2021-02-11

    Abstract: Structures for an edge coupler and methods of forming a structure for an edge coupler. The structure includes a waveguide core over a dielectric layer, and a back-end-of-line stack over the waveguide core and the dielectric layer. The back-end-of-line stack includes an interlayer dielectric layer, a side edge, a first feature, a second feature, and a third feature laterally arranged between the first feature and the second feature. The first feature, the second feature, and the third feature are positioned on the interlayer dielectric layer adjacent to the side edge, and the third feature has an overlapping relationship with a tapered section of the waveguide core.

    Reconfigurable optical grating/coupler

    公开(公告)号:US11550200B2

    公开(公告)日:2023-01-10

    申请号:US16808613

    申请日:2020-03-04

    Abstract: One illustrative device disclosed herein includes a lower waveguide structure and an upper body structure positioned above at least a portion of the lower waveguide structure. In this example, the device also includes a grating structure positioned in the upper body structure, wherein the grating structure comprises a plurality of grating elements that comprise a tunable material whose index of refraction may be changed by application of energy to the tunable material.

    OPTICAL POWER SPLITTERS WITH A TAILORED SPLITTING RATIO

    公开(公告)号:US20220413217A1

    公开(公告)日:2022-12-29

    申请号:US17358255

    申请日:2021-06-25

    Abstract: Structures for an optical power splitter and methods of forming a structure for an optical power splitter. The structure includes a first waveguide core having a first arm, a second waveguide core including a second arm, and a third waveguide core having a third arm laterally positioned between the first arm and the second arm. The third arm has a longitudinal axis. The first arm is longitudinally offset from the third arm parallel to the longitudinal axis such that the third arm and the first arm are laterally adjacent over a first overlap distance. The second arm is longitudinally offset from the third arm parallel to the longitudinal axis such that the third arm and the second arm are laterally adjacent over a second overlap distance. The first overlap distance is greater than the second overlap distance to provide an overlap offset.

    Heterogenous optical power splitter/combiner

    公开(公告)号:US11513286B2

    公开(公告)日:2022-11-29

    申请号:US17026799

    申请日:2020-09-21

    Inventor: Yusheng Bian

    Abstract: Structures for an optical power splitter/combiner and methods of forming a structure for an optical power splitter/combiner. A first waveguide core is positioned adjacent to a second waveguide core. The first waveguide core includes a first end surface and a first tapered section that tapers toward the first end surface. The second waveguide core includes a second end surface and a second tapered section that tapers toward the second end surface. A third waveguide core is positioned in a different level than the first waveguide core and the second waveguide core. The third waveguide core includes a third end surface and a third tapered section that tapers toward the third end surface. The third tapered section includes a portion laterally positioned between the first tapered section of the first waveguide core and the second tapered section of the second waveguide core.

    Silicon-on-insulator chip structure with substrate-embedded optical waveguide and method

    公开(公告)号:US11448822B2

    公开(公告)日:2022-09-20

    申请号:US17131997

    申请日:2020-12-23

    Abstract: Disclosed is a silicon-on-insulator (SOI) chip structure with a substrate-embedded optical waveguide. Also disclosed is a method for forming the SOI chip structure. In the method, an optical waveguide is formed within a trench in a bulk substrate prior to a wafer bonding process that results in the SOI structure. Subsequently, front-end-of-the-line (FEOL) processing can be performed to form additional optical devices and/or electronic devices in and/or above the silicon layer. By embedding an optical waveguide within the substrate prior to wafer bonding as opposed to forming it during FEOL processing, strict limitations on the dimensions of the core layer of the optical waveguide are avoided. The core layer of the substrate-embedded optical waveguide can be relatively large such that the cut-off wavelength can be relatively long. Thus, such a substrate-embedded optical waveguide brings different functionality to the SOI chip structure as compared to FEOL optical waveguides.

    OPTICAL ANTENNA FOR PHOTONIC INTEGRATED CIRCUIT AND METHODS TO FORM SAME

    公开(公告)号:US20220291446A1

    公开(公告)日:2022-09-15

    申请号:US17197133

    申请日:2021-03-10

    Abstract: Embodiments of the disclosure provide an optical antenna for a photonic integrated circuit (PIC). The optical antenna includes a semiconductor waveguide on a semiconductor layer. The semiconductor waveguide includes a first vertical sidewall over the semiconductor layer over the semiconductor layer. A plurality of grating protrusions extends horizontally from the first vertical sidewall of the semiconductor waveguide.

    EDGE COUPLERS IN THE BACK-END-OF-LINE STACK OF A PHOTONICS CHIP

    公开(公告)号:US20220229250A1

    公开(公告)日:2022-07-21

    申请号:US17151955

    申请日:2021-01-19

    Abstract: Structures including an edge coupler and methods of forming a structure including an edge coupler. The structure includes a waveguide core over a dielectric layer and a back-end-of-line stack over the dielectric layer and the waveguide core. The back-end-of-line stack includes a side edge and a truncated layer that is overlapped with a tapered section of the waveguide core. The truncated layer has a first end surface adjacent to the side edge and a second end surface above the tapered section of the waveguide core. The truncated layer is tapered from the first end surface to the second end surface.

    Stacked-waveguide polarizers with conductive oxide strips

    公开(公告)号:US11385408B2

    公开(公告)日:2022-07-12

    申请号:US16849355

    申请日:2020-04-15

    Abstract: Structures for a polarizer and methods of forming a structure for a polarizer. A polarizer includes a first waveguide core and a layer that is positioned adjacent to a side surface of the first waveguide core. The layer is composed of a first material having a permittivity with an imaginary part that ranges from 0 to about 15. A second waveguide core is positioned over the first waveguide core. The second waveguide core is composed of a second material that is different in composition from the first material.

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