公开(公告)号：US20060091458A1

公开(公告)日：2006-05-04

申请号：US11265720

申请日：2005-11-02

Applicant: Ki-chul Kim ,  Geum-jong Bae ,  In-wook Cho ,  Byoung-jin Lee ,  Byou-ree Lim

Inventor： Ki-chul Kim ,  Geum-jong Bae ,  In-wook Cho ,  Byoung-jin Lee ,  Byou-ree Lim

IPC: H01L29/94

CPC classification number: H01L29/66833 ,  H01L29/40117 ,  H01L29/7923

Abstract: Provided are a nonvolatile memory device that has enhanced endurance and can accurately read stored data, and a method of manufacturing the same. The nonvolatile memory device includes a trench formed in a semiconductor substrate, a gate electrode formed in the trench, a gate electrode insulating layer interposed between the gate electrode and bottom and lower sidewalls of the trench, a trap structure interposed between upper sidewalls of the trench and the gate electrode and comprising a tunneling layer, a trapping layer, and a blocking layer, and source and drain regions formed on both sides of the semiconductor substrate with respect to the trench, in which the gate electrode insulating layer is not formed and partially overlapped by the trapping layer.

Abstract translation: 提供了具有增强的耐久性并且可以准确地读取存储的数据的非易失性存储器件及其制造方法。 非易失性存储器件包括形成在半导体衬底中的沟槽，形成在沟槽中的栅电极，介于沟槽的栅电极和底侧与下侧壁之间的栅电极绝缘层，夹在沟槽的上侧壁之间的陷阱结构 和栅电极，其包括隧道层，捕获层和阻挡层，以及形成在半导体衬底的相对于沟槽的两侧的源极和漏极区域，其中不形成栅电极绝缘层并且部分地 由捕获层重叠。