摘要:
Provided are a nonvolatile memory device that has enhanced endurance and can accurately read stored data, and a method of manufacturing the same. The nonvolatile memory device includes a trench formed in a semiconductor substrate, a gate electrode formed in the trench, a gate electrode insulating layer interposed between the gate electrode and bottom and lower sidewalls of the trench, a trap structure interposed between upper sidewalls of the trench and the gate electrode and comprising a tunneling layer, a trapping layer, and a blocking layer, and source and drain regions formed on both sides of the semiconductor substrate with respect to the trench, in which the gate electrode insulating layer is not formed and partially overlapped by the trapping layer.
摘要:
A non-volatile memory device having an asymmetric channel structure is provided. The non-volatile memory device includes a semiconductor substrate, a source region and a drain region which are formed in the semiconductor substrate and doped with n-type impurities, a trapping structure which includes a tunneling layer, which is disposed on a predetermined region of the semiconductor substrate and through which charge carriers are tunneled, and a charge trapping layer, which is formed on the tunneling layer and traps the tunneled charge carriers, a gate insulating layer which is formed on the trapping structure and the exposed semiconductor substrate, a gate electrode which is formed on the gate insulating layer, and a channel region which is formed between the source region and the drain region and includes a first channel region formed on a lower part of the trapping structure and a second channel region formed on a lower part of the gate insulating layer, the threshold voltage of the first channel region being lower than that of the second channel region.
摘要:
A non-volatile memory device having an asymmetric channel structure is provided. The non-volatile memory device includes a semiconductor substrate, a source region and a drain region which are formed in the semiconductor substrate and doped with n-type impurities, a trapping structure which includes a tunneling layer, which is disposed on a predetermined region of the semiconductor substrate and through which charge carriers are tunneled, and a charge trapping layer, which is formed on the tunneling layer and traps the tunneled charge carriers, a gate insulating layer which is formed on the trapping structure and the exposed semiconductor substrate, a gate electrode which is formed on the gate insulating layer, and a channel region which is formed between the source region and the drain region and includes a first channel region formed on a lower part of the trapping structure and a second channel region formed on a lower part of the gate insulating layer, the threshold voltage of the first channel region being lower than that of the second channel region.
摘要:
A non-volatile memory device having improved electrical characteristics and a method of fabricating the non-volatile memory device are provided. The non-volatile memory device includes a gate electrode, which is formed on a semiconductor substrate on which source and drain regions are formed, a trapping structure, which is interposed between the semiconductor substrate and the gate electrode and comprises an electron tunneling layer and a charge trapping layer, and an electron back-tunneling prevention layer, which is interposed between the gate electrode and the charge trapping layer, prevents electrons in the gate electrode from back-tunneling through the charge trapping layer, and is formed of a metal having a higher work function than the gate electrode.
摘要:
In a non-volatile memory device with a buried control gate, the effective channel length of the control gate is increased to restrain punchthrough, and a region for storing charge is increased for attaining favorably large capacity. A method of fabricating the memory device includes forming the control gate within a trench formed in a semiconductor substrate, and forming charge storing regions in the semiconductor substrate on both sides of the control gate in a self-aligning manner, thereby allowing for multi-level cell operation.
摘要:
A non-volatile memory device having improved electrical characteristics and a method of fabricating the non-volatile memory device are provided. The non-volatile memory device includes a gate electrode, which is formed on a semiconductor substrate on which source and drain regions are formed, a trapping structure, which is interposed between the semiconductor substrate and the gate electrode and comprises an electron tunneling layer and a charge trapping layer, and an electron back-tunneling prevention layer, which is interposed between the gate electrode and the charge trapping layer, prevents electrons in the gate electrode from back-tunneling through the charge trapping layer, and is formed of a metal having a higher work function than the gate electrode.
摘要:
In a non-volatile memory device with a buried control gate, the effective channel length of the control gate is increased to restrain punchthrough, and a region for storing charge is increased for attaining favorably large capacity. A method of fabricating the memory device includes forming the control gate within a trench formed in a semiconductor substrate, and forming charge storing regions in the semiconductor substrate on both sides of the control gate in a self-aligning manner, thereby allowing for multi-level cell operation.
摘要:
In a non-volatile memory device with a buried control gate, the effective channel length of the control gate is increased to restrain punchthrough, and a region for storing charge is increased for attaining favorably large capacity. A method of fabricating the memory device includes forming the control gate within a trench formed in a semiconductor substrate, and forming charge storing regions in the semiconductor substrate on both sides of the control gate in a self-aligning manner, thereby allowing for multi-level cell operation.
摘要:
In a non-volatile memory device with a buried control gate, the effective channel length of the control gate is increased to restrain punchthrough, and a region for storing charge is increased for attaining favorably large capacity. A method of fabricating the memory device includes forming the control gate within a trench formed in a semiconductor substrate, and forming charge storing regions in the semiconductor substrate on both sides of the control gate in a self-aligning manner, thereby allowing for multi-level cell operation.
摘要:
A non-volatile memory device includes a pair of source/drain regions disposed in a semiconductor substrate, having a channel region between them. A charge storage oxide layer is disposed on the channel region and overlaps part of each of the pair of source/drain regions. A gate electrode is disposed on the charge storage oxide layer. At least one halo implantation region is formed in the semiconductor substrate adjacent to one of the pair of source/drain regions, and overlapping the charge storage oxide layer. A program operation is performed by trapping electrons in the charge storage oxide layer located near the source/drain region where the halo ion implantation region is formed, and an erase operation is performed by injecting holes into the charge storage oxide layer located near the source/drain region where the halo ion implantation region is formed.