公开(公告)号：US20050287786A1

公开(公告)日：2005-12-29

申请号：US10875029

申请日：2004-06-23

申请人： Peter Gammel ,  Bailey Jones ,  Isik Kizilyalli ,  Hugo Safar

发明人： Peter Gammel ,  Bailey Jones ,  Isik Kizilyalli ,  Hugo Safar

IPC分类号： H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/4763 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/10 ,  H01L29/16 ,  H01L29/167 ,  H01L29/78

CPC分类号： H01L29/16 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/322 ,  H01L21/823412 ,  H01L21/823807 ,  H01L29/1033 ,  H01L29/167 ,  H01L29/6659 ,  H01L29/7833

摘要： The present invention provides a process for manufacturing a semiconductor device that can be incorporated into an integrated circuit. The method includes, forming a first doped layer of isotopically enriched silicon over a foundational substrate, forming a second layer of an isotopically enriched semiconductor material silicon over the first doped layer, and constructing active devices on the second layer. The device includes a first doped layer of an isotopically enriched semiconductor material and a second layer of an isotopically enriched semiconductor material located over the first doped layer, and active devices located on the second layer.

摘要翻译： 本发明提供一种可并入集成电路的半导体器件的制造方法。 该方法包括：在基底衬底上形成同位素富集的硅的第一掺杂层，在第一掺杂层上形成同位素富集的半导体材料硅的第二层，以及在第二层上构建有源器件。 该器件包括同位素富集的半导体材料的第一掺杂层和位于第一掺杂层上方的同位素富集的半导体材料的第二层以及位于第二层上的有源器件。