Abstract:
An image sensor includes photoelectric conversion elements formed adjacent to each other on a substrate. Two transmission elements transmit charge accumulated in two adjacent photoelectric conversion elements to a first floating diffusion region, and another two transmission elements transmit charge accumulated in the other two photoelectric conversion elements to a second floating diffusion region. The first floating diffusion region is electrically connected to the second floating diffusion region. A plurality of readout elements read out the charge transmitted to the first and the second floating diffusion regions. The image sensor also includes a dummy gate group including at least one dummy gate arrayed substantially parallel to a readout gate of the plurality of readout elements.
Abstract:
In one aspect, an image sensor is provided which includes an array of unit active pixels. Each of the unit active pixels comprises a first active area including a plurality of photoelectric conversion regions, and a second active area separated from the first active area. The first active areas are arranged in rows and columns so as to define row and column extending spacings there between, and the second active areas are located at respective intersections of the row and column extending spacings defined between the first active areas.
Abstract:
A transistor having an electrode layer that can reduce or prevent a coupling effect, a fabricating method thereof, and an image sensor having the same are provided. The transistor includes a semiconductor substrate and a well of a first conductivity type formed on the semiconductor substrate. A heavily-doped first impurity region of a first conductivity type surrounds an active region defined in the well. Heavily-doped second and third impurity regions of a second conductivity type are spaced apart from each other in the active region an define a channel region interposed therebetween. A gate is formed over the channel region to cross the active region. The gate overlaps at least a portion of the first impurity region and receives a first voltage. An electrode layer is formed between the semiconductor substrate and the gate, such that the electrode layer overlaps a portion of the first impurity region contacting the channel region and receives a second voltage. An insulation layer is formed between the semiconductor substrate and the electrode layer, the semiconductor substrate and the gate, and the electrode layer and the gate. The insulation layer surrounds the electrode layer.
Abstract:
A node structure of a multiway search tree can accelerates a search speed by making a key, a key pointer and a node pointer coincident with the size of a cache line through the use of only one pointer written on a node regardless of the number of keys used in the node and, thereafter, reduce the main memory capacity, a search method using the node structure and a computer readable recording medium in which a program implementing the search method is recorded. The method for generating nodes of a multiway search tree includes the steps of: a) assigning at least one key to each of the nodes; and b) assigning pointer information so that related information written on the node is accommodated in a cache line regardless a number of keys.
Abstract:
In a radio frequency identification (RFID) security reader, by integrating an encryption module that encrypts transmission data and a decryption module that decrypts reception data from an RFID security tag to restore the reception data to original data to a modem, an input/output time period of a processor module that processes a communication protocol in an RFID security system is minimized.
Abstract:
In a method of allocating a bandwidth of a passive optical network, downward data are transmitted by varying a wavelength based on a wavelength division method and upward data are transmitted using a time division method. Thereby, by efficiently allocating a network bandwidth, data can be transmitted and by realizing statistical multiplexing, transmission efficiency can be improved.
Abstract:
A shared-pixel-type image sensor includes a semiconductor substrate, four photoelectric conversion elements disposed adjacent to one another in one direction on the semiconductor substrate, two first transmission elements transmitting charges accumulated in two adjacent ones of the photoelectric conversion elements to a first floating diffusion region, respectively, two second transmission elements transmitting charges accumulated in the other two adjacent photoelectric conversion elements to a second floating diffusion region electrically coupled with the first floating diffusion region, respectively, MOS capacitors that are electrically coupled with the first or second floating diffusion region, a reset element resetting the charges of the first and second floating diffusion regions to a reference value, and a drive element and an select element outputting the charges of the first or second floating diffusion region.
Abstract:
A Radio Frequency Identification (RFID) tag and an interrogator that support a normal mode and a secure mode, and operating methods thereof are provided. The RFID tag may notify the interrogator of whether a current operating mode of the RFID tag is the normal mode or the secure mode, may perform different inventory processes based on the current operating mode, and may perform an authentication of the interrogator. Here, the RFID tag and the interrogator may also perform a mutual authentication.
Abstract:
An image sensor includes photoelectric conversion elements formed adjacent to each other on a substrate. Two transmission elements transmit charge accumulated in two adjacent photoelectric conversion elements to a first floating diffusion region, and another two transmission elements transmit charge accumulated in the other two photoelectric conversion elements to a second floating diffusion region. The first floating diffusion region is electrically connected to the second floating diffusion region. A plurality of readout elements read out the charge transmitted to the first and the second floating diffusion regions. The image sensor also includes a dummy gate group including at least one dummy gate arrayed substantially parallel to a readout gate of the plurality of readout elements.
Abstract:
An image sensor can include a plurality of photoelectric conversion elements arranged in a matrix. A plurality of floating diffusion regions can be shared by respective corresponding pairs of adjacent photoelectric conversion elements. A plurality of charge-transmission transistors can respectively correspond to the photoelectric conversion elements, where each of the charge-transmission transistors are connected between a corresponding one of the plurality of photoelectric conversion elements and a corresponding one of the plurality of floating diffusion regions. A plurality of charge-transmission lines can be commonly connected to gates of respective corresponding pairs of adjacent rows of charge-transmission transistors, where each of the respective corresponding pairs of adjacent rows of charge-transmission transistors can be connected to respective ones of the plurality of photoelectric conversion elements in different adjacent rows of floating diffusion regions.