Image sensors with enhanced charge transmission characteristics

    公开(公告)号:US07564018B2

    公开(公告)日:2009-07-21

    申请号:US11502415

    申请日:2006-08-11

    CPC classification number: H01L27/14603 H01L27/14643

    Abstract: An image sensor includes photoelectric conversion elements formed adjacent to each other on a substrate. Two transmission elements transmit charge accumulated in two adjacent photoelectric conversion elements to a first floating diffusion region, and another two transmission elements transmit charge accumulated in the other two photoelectric conversion elements to a second floating diffusion region. The first floating diffusion region is electrically connected to the second floating diffusion region. A plurality of readout elements read out the charge transmitted to the first and the second floating diffusion regions. The image sensor also includes a dummy gate group including at least one dummy gate arrayed substantially parallel to a readout gate of the plurality of readout elements.

    Image sensors including active pixel sensor arrays
    22.
    发明授权
    Image sensors including active pixel sensor arrays 有权
    图像传感器包括有源像素传感器阵列

    公开(公告)号:US07541628B2

    公开(公告)日:2009-06-02

    申请号:US11481733

    申请日:2006-07-07

    Abstract: In one aspect, an image sensor is provided which includes an array of unit active pixels. Each of the unit active pixels comprises a first active area including a plurality of photoelectric conversion regions, and a second active area separated from the first active area. The first active areas are arranged in rows and columns so as to define row and column extending spacings there between, and the second active areas are located at respective intersections of the row and column extending spacings defined between the first active areas.

    Abstract translation: 在一个方面,提供一种包括单位有源像素阵列的图像传感器。 每个单位有源像素包括包括多个光电转换区域的第一有源区域和与第一有源区域分离的第二有源区域。 第一有源区域以行和列布置,以便在其间限定行和列延伸的间隔,并且第二有源区域位于在第一有源区域之间限定的行和列延伸间隔的相应交点处。

    Transistor Having Coupling-Preventing Electrode Layer, Fabricating Method Thereof, and Image Sensor Having the Same
    23.
    发明申请
    Transistor Having Coupling-Preventing Electrode Layer, Fabricating Method Thereof, and Image Sensor Having the Same 失效
    具有耦合防止电极层的晶体管,其制造方法和具有相同的图像传感器

    公开(公告)号:US20080191250A1

    公开(公告)日:2008-08-14

    申请号:US11962401

    申请日:2007-12-21

    CPC classification number: H01L27/14689 H01L27/14609 H01L27/14643 H01L29/78

    Abstract: A transistor having an electrode layer that can reduce or prevent a coupling effect, a fabricating method thereof, and an image sensor having the same are provided. The transistor includes a semiconductor substrate and a well of a first conductivity type formed on the semiconductor substrate. A heavily-doped first impurity region of a first conductivity type surrounds an active region defined in the well. Heavily-doped second and third impurity regions of a second conductivity type are spaced apart from each other in the active region an define a channel region interposed therebetween. A gate is formed over the channel region to cross the active region. The gate overlaps at least a portion of the first impurity region and receives a first voltage. An electrode layer is formed between the semiconductor substrate and the gate, such that the electrode layer overlaps a portion of the first impurity region contacting the channel region and receives a second voltage. An insulation layer is formed between the semiconductor substrate and the electrode layer, the semiconductor substrate and the gate, and the electrode layer and the gate. The insulation layer surrounds the electrode layer.

    Abstract translation: 提供具有可以减少或防止耦合效应的电极层的晶体管,其制造方法和具有该电极层的图像传感器。 晶体管包括形成在半导体衬底上的半导体衬底和第一导电类型的阱。 第一导电类型的重掺杂的第一杂质区围绕阱中限定的有源区。 第二导电类型的重掺杂的第二和第三杂质区域在有源区域中彼此间隔开,限定插入其间的沟道区域。 栅极形成在沟道区域上以穿过有源区。 栅极与第一杂质区域的至少一部分重叠并接收第一电压。 在半导体衬底和栅极之间形成电极层,使得电极层与接触沟道区的第一杂质区的一部分重叠并接收第二电压。 在半导体衬底和电极层,半导体衬底和栅极以及电极层和栅极之间形成绝缘层。 绝缘层包围电极层。

    Method for generating nodes in multiway search tree and search method using the same
    24.
    发明授权
    Method for generating nodes in multiway search tree and search method using the same 失效
    在多路搜索树中生成节点的方法和使用它的搜索方法

    公开(公告)号:US07403494B2

    公开(公告)日:2008-07-22

    申请号:US10038923

    申请日:2001-12-31

    Abstract: A node structure of a multiway search tree can accelerates a search speed by making a key, a key pointer and a node pointer coincident with the size of a cache line through the use of only one pointer written on a node regardless of the number of keys used in the node and, thereafter, reduce the main memory capacity, a search method using the node structure and a computer readable recording medium in which a program implementing the search method is recorded. The method for generating nodes of a multiway search tree includes the steps of: a) assigning at least one key to each of the nodes; and b) assigning pointer information so that related information written on the node is accommodated in a cache line regardless a number of keys.

    Abstract translation: 多路搜索树的节点结构可以通过使用键,键指针和节点指针,通过仅使用写在节点上的一个指针而与高速缓存行的大小一致来加速搜索速度,而不管键的数量如何 并且此后减少主存储器容量,使用节点结构的搜索方法以及其中记录了实现搜索方法的程序的计算机可读记录介质。 用于生成多路搜索树的节点的方法包括以下步骤:a)将至少一个密钥分配给每个节点; 以及b)分配指针信息,使得写在节点上的相关信息被容纳在高速缓存行中,而不管密钥的数量如何。

    Method of allocating bandwidth of passive optical network
    26.
    发明授权
    Method of allocating bandwidth of passive optical network 失效
    无源光网络带宽分配方法

    公开(公告)号:US08285143B2

    公开(公告)日:2012-10-09

    申请号:US12284247

    申请日:2008-09-19

    CPC classification number: H04J14/0282 H04J3/1694

    Abstract: In a method of allocating a bandwidth of a passive optical network, downward data are transmitted by varying a wavelength based on a wavelength division method and upward data are transmitted using a time division method. Thereby, by efficiently allocating a network bandwidth, data can be transmitted and by realizing statistical multiplexing, transmission efficiency can be improved.

    Abstract translation: 在分配无源光网络的带宽的方法中,通过基于波分方法改变波长来发送下行数据,并且使用时分方法发送向上数据。 因此,通过有效地分配网络带宽,可以发送数据,通过实现统计复用,可以提高传输效率。

    Shared-pixel-type image sensors for controlling capacitance of floating diffusion region
    27.
    发明授权
    Shared-pixel-type image sensors for controlling capacitance of floating diffusion region 失效
    用于控制浮动扩散区电容的共享像素型图像传感器

    公开(公告)号:US08264579B2

    公开(公告)日:2012-09-11

    申请号:US11652602

    申请日:2007-01-12

    CPC classification number: H01L27/14609 H01L27/14603 H01L27/14641 H04N5/335

    Abstract: A shared-pixel-type image sensor includes a semiconductor substrate, four photoelectric conversion elements disposed adjacent to one another in one direction on the semiconductor substrate, two first transmission elements transmitting charges accumulated in two adjacent ones of the photoelectric conversion elements to a first floating diffusion region, respectively, two second transmission elements transmitting charges accumulated in the other two adjacent photoelectric conversion elements to a second floating diffusion region electrically coupled with the first floating diffusion region, respectively, MOS capacitors that are electrically coupled with the first or second floating diffusion region, a reset element resetting the charges of the first and second floating diffusion regions to a reference value, and a drive element and an select element outputting the charges of the first or second floating diffusion region.

    Abstract translation: 共享像素型图像传感器包括半导体基板,在半导体基板上沿一个方向彼此相邻布置的四个光电转换元件,两个第一传输元件,其将在两个相邻的光电转换元件中累积的电荷传输到第一浮置 扩散区域分别将在另外两个相邻的光电转换元件中累积的电荷的两个第二传输元件分别连接到与第一浮动扩散区电耦合的第二浮动扩散区域,与第一或第二浮动扩散电耦合的MOS电容器 区域,将第一和第二浮动扩散区域的电荷重置为基准值的复位元件,以及输出第一或第二浮动扩散区域的电荷的驱动元件和选择元件。

    Image sensors with enhanced charge transmission characteristics
    29.
    发明授权
    Image sensors with enhanced charge transmission characteristics 失效
    具有增强的电荷传输特性的图像传感器

    公开(公告)号:US07989750B2

    公开(公告)日:2011-08-02

    申请号:US12457536

    申请日:2009-06-15

    CPC classification number: H01L27/14603 H01L27/14643

    Abstract: An image sensor includes photoelectric conversion elements formed adjacent to each other on a substrate. Two transmission elements transmit charge accumulated in two adjacent photoelectric conversion elements to a first floating diffusion region, and another two transmission elements transmit charge accumulated in the other two photoelectric conversion elements to a second floating diffusion region. The first floating diffusion region is electrically connected to the second floating diffusion region. A plurality of readout elements read out the charge transmitted to the first and the second floating diffusion regions. The image sensor also includes a dummy gate group including at least one dummy gate arrayed substantially parallel to a readout gate of the plurality of readout elements.

    Abstract translation: 图像传感器包括在基板上彼此相邻形成的光电转换元件。 两个传输元件将在两个相邻的光电转换元件中累积的电荷传输到第一浮动扩散区域,另外两个传输元件将在另外两个光电转换元件中累积的电荷传输到第二浮动扩散区域。 第一浮动扩散区域电连接到第二浮动扩散区域。 多个读出元件读出传输到第一和第二浮动扩散区域的电荷。 图像传感器还包括虚拟栅极组,其包括基本上平行于多个读出元件的读出栅极排列的至少一个虚拟栅极。

    Image sensor circuits including shared floating diffusion regions
    30.
    发明授权
    Image sensor circuits including shared floating diffusion regions 有权
    图像传感器电路包括共享浮动扩散区域

    公开(公告)号:US07910965B2

    公开(公告)日:2011-03-22

    申请号:US12139022

    申请日:2008-06-13

    Abstract: An image sensor can include a plurality of photoelectric conversion elements arranged in a matrix. A plurality of floating diffusion regions can be shared by respective corresponding pairs of adjacent photoelectric conversion elements. A plurality of charge-transmission transistors can respectively correspond to the photoelectric conversion elements, where each of the charge-transmission transistors are connected between a corresponding one of the plurality of photoelectric conversion elements and a corresponding one of the plurality of floating diffusion regions. A plurality of charge-transmission lines can be commonly connected to gates of respective corresponding pairs of adjacent rows of charge-transmission transistors, where each of the respective corresponding pairs of adjacent rows of charge-transmission transistors can be connected to respective ones of the plurality of photoelectric conversion elements in different adjacent rows of floating diffusion regions.

    Abstract translation: 图像传感器可以包括以矩阵形式布置的多个光电转换元件。 多个浮动扩散区域可由相应的相应光电转换元件对共享。 多个电荷传输晶体管可以分别对应于光电转换元件,其中每个电荷传输晶体管连接在多个光电转换元件中的相应一个光电转换元件和多个浮动扩散区域中相应的一个之间。 多个电荷传输线可以共同地连接到相应的相应的一对电荷传输晶体管的栅极,其中各个相应的电荷传输晶体管对中的每一对可以连接到多个电荷传输晶体管中的相应行 的不同相邻行的浮动扩散区域中的光电转换元件。

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