Semiconductor device
    21.
    发明授权

    公开(公告)号:US5008724A

    公开(公告)日:1991-04-16

    申请号:US547361

    申请日:1990-07-03

    CPC分类号: H01L27/0688 H01L29/861

    摘要: A semiconductor device comprising a semiconductor substrate, a field effect transistor formed in the substrate, and a diode connected to the field effect transistor and formed on the insulation film formed on the substrate. Since the diode is electrically insulated from the substrate by the insulation film, no parasitic PNPN thyristor is formed in the semiconductor substrate. Therefore, a latch-up is prevented from occurring in the semiconductor device.