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22 条记录 (耗时 0.015 秒)

    Semiconductor memory device
    2.
    发明授权
    Semiconductor memory device 失效
    半导体存储器件

    公开(公告)号：US4707720A

    公开(公告)日：1987-11-17

    申请号：US802372

    申请日：1985-11-27

    申请人： Koji Shirai ,  Ken Kawamura

    发明人： Koji Shirai ,  Ken Kawamura

    IPC分类号： H01L29/06 ,  H01L29/40 ,  H01L29/73 ,  H01L29/78 ,  H01L29/04

    CPC分类号： H01L29/404 ,  H01L29/405 ,  H01L29/7302 ,  H01L29/7322 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7809

    摘要： There is disclosed an NPN transistor comprising collector region of N conductivity type, base region of P conductivity type formed in the collector region, and emitter region of N conductivity type formed in the collector region. The collector and emitter regions define therebetween a planar PN junction. The NPN transistor further comprises a field plate electrode layer, when the transistor is viewed from above, extending from the periphery of the base region to the collector region. The field plate electrode layer comprises P conductivity semiconductor portion and N conductivity semiconductor portion. The P conductivity semiconductor portion is on the side of the base region. The N conductivity semiconductor portion is on the side of the collector region.

    摘要翻译： 公开了一种NPN晶体管，其包括N导电类型的集电极区域，在集电极区域形成的P导电类型的基极区域和形成在集电极区域中的N导电类型的发射极区域。 集电极和发射极区域在其间限定平面PN结。 当从上方观察晶体管时，NPN晶体管还包括场板电极层，从基极区域的周边延伸到集电极区域。 场极板电极层包括P导电半导体部分和N导电半导体部分。 P导电性半导体部位于基极侧。 N导电性半导体部位于集电极区域侧。

    Directly imageable waterless planographic printing plate precursor
    4.
    发明授权
    Directly imageable waterless planographic printing plate precursor 有权
    直接成像无水平版印刷版前体

    公开(公告)号：US06964841B2

    公开(公告)日：2005-11-15

    申请号：US10372769

    申请日：2003-02-26

    申请人： Akihiko Iihara ,  Ken Kawamura ,  Mitsuru Suezawa ,  Kimikazu Nagase

    发明人： Akihiko Iihara ,  Ken Kawamura ,  Mitsuru Suezawa ,  Kimikazu Nagase

    IPC分类号： B41C1/10 ,  B41N1/08 ,  G03F7/11

    CPC分类号： B41C1/1016 ,  B41C2201/02 ,  B41C2201/14 ,  B41C2210/04 ,  B41C2210/16 ,  B41C2210/24 ,  B41N1/083

    摘要： The invention is a directly imageable waterless planographic printing plate precursor comprising: at least a heat insulating layer, a heat sensitive layer, and an ink repellent layer that are provided in that order on a substrate, wherein a transmittance of the heat insulating layer for a light having a wavelength within a range of 400 to 650 nm is at most 15% over the entire range of the wavelength. The invention provides a directly imageable waterless planographic printing plate precursor that allows measurement of the dot area ratio on the printing plate with a densitometer or the like.

    摘要翻译： 本发明是一种可直接成像的无水平版印刷版原版，其特征在于，至少具有在基板上依次设置的绝热层，感热层和拒油墨层，其中，绝热层 波长在400至650nm范围内的光在波长的整个范围内至多为15％。 本发明提供一种可直接成像的无水平版印刷版原版，其允许用密度计等测量印版上的点面积比。

    Plate for waterless lithographic
    5.
    发明授权
    Plate for waterless lithographic 失效
    无水平版印版

    公开(公告)号：US6106997A

    公开(公告)日：2000-08-22

    申请号：US11793

    申请日：1998-03-06

    申请人： Masahiro Oguni ,  Ken Kawamura ,  Keiko Sugikawa

    发明人： Masahiro Oguni ,  Ken Kawamura ,  Keiko Sugikawa

    IPC分类号： G03F7/004 ,  B41N1/14 ,  G03F7/00 ,  G03F7/027 ,  G03F7/038 ,  G03F7/075 ,  G03F7/11 ,  G03F7/30

    CPC分类号： G03F7/027 ,  G03F7/0752

    摘要： Provided is a non-processed plate for waterless lithographic printing plates, which comprises a photosensitive layer, an ink-repellent layer and a protective layer as laminated in that order on a support and in which the photosensitive layer contains a polymerizable compound as obtained by reacting a glycidyl ether of a polyalcohol, such as hexitol or pentitol, with acrylic acid and/or methacrylic acid. The plate has good image reproducibility and good storage stability. Processing the plate gives waterless lithographic printing plates having good printing durability.

    摘要翻译： PCT No.PCT / JP97 / 02085 Sec。 371日期1998年3月6日 102（e）1998年3月6日PCT PCT 1997年6月17日PCT公布。 公开号WO97 / 49005 日期1997年12月24日提供了一种无水平版印刷版的未经处理的板，其包括在载体上依次层压感光层，拒油层和保护层，其中感光层含有可聚合的 通过多元醇的缩水甘油醚如己糖醇或戊糖醇与丙烯酸和/或甲基丙烯酸反应得到的化合物。 该板具有良好的图像再现性和良好的储存稳定性。 加工板材具有良好的印刷耐久性的无水平版印刷版。

    Semiconductor device IC with DMOS using self-aligned back gate region
    6.
    发明授权
    Semiconductor device IC with DMOS using self-aligned back gate region 失效
    具有DMOS的半导体器件IC采用自对准背栅区

    公开(公告)号：US4878096A

    公开(公告)日：1989-10-31

    申请号：US27406

    申请日：1987-03-18

    申请人： Koji Shirai ,  Ken Kawamura

    发明人： Koji Shirai ,  Ken Kawamura

    IPC分类号： H01L21/336 ,  H01L21/761 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/78

    CPC分类号： H01L21/823462 ,  H01L21/761 ,  H01L21/823857 ,  H01L27/0922 ,  H01L27/088 ,  Y10S148/031 ,  Y10S148/082

    摘要： In a semiconductor device according to the present invention, a pair of element regions of a second conductivity type are formed so as to be electrically isolated from each other on a semiconductor substrate of a first conductivity type, a complementary MOS transistor is formed in one of the element regions of the second conductivity type, and a double-diffused MOS transistor is formed in the other element region of the second conductivity type. The complementary MOS transistor is of a surface channel type in which N- and P-channel MOS transistors are respectively formed in a pair of well diffusion layers of the first and second conductivity types formed in the element region of the second conductivity type, and conductivity types of the respective gate electrodes of the N- and P-channel MOS transistors are different from those of the respective well diffusion layers. The double-diffused MOS transistor is of a surface channel type in which a back gate region is formed so as to be self-aligned with the gate electrode and the conductivity type of the gate electrode is different from that of the well diffusion layer.

    摘要翻译： 在根据本发明的半导体器件中，一对第二导电类型的元件区域形成为在第一导电类型的半导体衬底上彼此电隔离，互补MOS晶体管形成为 第二导电类型的元件区域和双扩散MOS晶体管形成在第二导电类型的另一元件区域中。 互补MOS晶体管是表面沟道型，其中N沟道MOS晶体管和P沟道MOS晶体管分别形成在形成在第二导电类型的元件区域中的第一和第二导电类型的一对阱扩散层中，并且导电性 N沟道MOS晶体管和P沟道MOS晶体管的各个栅极的类型与各个阱扩散层的不同。 双扩散MOS晶体管是表面沟道型，其中形成背栅区以与栅电极自对准，并且栅电极的导电类型不同于阱扩散层的导电类型。

    Automobile seat assembly
    10.
    发明授权
    Automobile seat assembly 失效
    汽车座椅总成

    公开(公告)号：US5176424A

    公开(公告)日：1993-01-05

    申请号：US898399

    申请日：1992-06-11

    申请人： Koji Tobita ,  Kouzou Hirota ,  Takeshi Takagi ,  Ken Kawamura ,  Kazuki Fujise ,  Yoshiaki Kinoshita

    发明人： Koji Tobita ,  Kouzou Hirota ,  Takeshi Takagi ,  Ken Kawamura ,  Kazuki Fujise ,  Yoshiaki Kinoshita

    IPC分类号： A47C31/12 ,  B60N2/00 ,  B60N2/06 ,  B60N2/56 ,  B60N2/90

    CPC分类号： B60N2/4415 ,  A47C27/082 ,  A47C27/083 ,  A47C27/085 ,  A47C27/086 ,  A47C31/126 ,  A47C4/54 ,  B60N2/002 ,  B60N2/06 ,  B60N2/5657 ,  B60N2/5685 ,  B60N2/7041 ,  G01G19/4142 ,  Y10S297/01

    摘要： An automobile seat assembly includes a seat cushion subassembly and a seat back subassembly coupled with the seat cushion subassembly to represent a generally L-shaped configuration. A holding device is installed in the seat cushion subassembly and is deformable in response to the sitting of a seat occupant on a sitting area of the seat cushion subassembly and holds the sitting area in a deformed shape resulting from the seat occupant sitting on the sitting area. An actuating device installed in the seat cushion subassembly actuates the holding device. A detecting device detects the actual sitting position of the seat occupant on the sitting area. A control device is operable to operate the actuating device a predetermined time after the detecting device has detected the actual sitting position of the seat occupant on the sitting area.

    摘要翻译： 汽车座椅组件包括座垫子组件和与座垫子组件联接以表示大致L形构造的座椅靠背子组件。 保持装置安装在座垫子组件中，并且能够响应于座椅乘员坐在座垫子组件的休息区而变形，并且将休息区保持在座位乘坐者坐在休息区上的变形形状 。 安装在座垫子组件中的致动装置致动保持装置。 检测装置检测座位乘客在休息区域的实际坐姿。 控制装置可操作以在检测装置检测到座位乘客在休息区域上的实际坐姿之后的预定时间内操作致动装置。