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公开(公告)号:US20120280780A1
公开(公告)日:2012-11-08
申请号:US13267884
申请日:2011-10-07
申请人: I-Chi CHENG , Yi-Fan WU , Cheng-Yi LO , Ming-Cheng LEE , Kuo-Jung LIN
发明人: I-Chi CHENG , Yi-Fan WU , Cheng-Yi LO , Ming-Cheng LEE , Kuo-Jung LIN
IPC分类号: H01F27/24
CPC分类号: H01F5/02 , H01F5/04 , H01F27/29 , H01F27/325
摘要: A bobbin used in a transformer is disclosed. The bobbin includes a main body, two side walls, two wire collecting bases and at least one extension wire collecting base. The main body has a tunnel. The two side walls are disposed on the two ends of the main body, respectively. The tunnel passes through the two ends of the main body and the two side walls. The two wire collecting bases are disposed on the two side walls respectively or on one of the two side walls. Each wire collecting base has at least one wire collecting part. The extension wire collecting base has at least one extension wire collecting part. The extension wire collecting base can couple with the wire collecting base.
摘要翻译: 公开了一种用于变压器的线轴。 线轴包括主体,两个侧壁,两个集线基座和至少一个延伸线收集基座。 主体有隧道。 两个侧壁分别设置在主体的两端。 隧道穿过主体和两个侧壁的两端。 两个线集合基座分别设置在两个侧壁上或两个侧壁之一上。 每个线收集基座具有至少一个线收集部分。 延长线收集底座具有至少一个延伸线收集部分。 延长线收集基座可以与线收集基座连接。
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公开(公告)号:US20120032254A1
公开(公告)日:2012-02-09
申请号:US13103112
申请日:2011-05-09
申请人: Ming-Tzong Yang , Ming-Cheng Lee
发明人: Ming-Tzong Yang , Ming-Cheng Lee
IPC分类号: H01L29/78 , H01L21/336
CPC分类号: H01L29/66477 , H01L21/265 , H01L21/823418 , H01L21/823814 , H01L27/027 , H01L29/0653 , H01L29/0847 , H01L29/1083 , H01L29/7833 , H01L29/7835 , H01L29/78612
摘要: An electrostatic discharge (ESD) protection device includes a substrate; a source region of a first conductivity type in the substrate; a drain region of the first conductivity type in the substrate; a gate electrode overlying the substrate between the source region and the drain region; and a core pocket doping region of the second conductivity type within the drain region. The core pocket doping region does not overlap with an edge of the drain region.
摘要翻译: 静电放电(ESD)保护器件包括衬底; 在所述衬底中的第一导电类型的源极区; 衬底中的第一导电类型的漏极区域; 在所述源极区域和所述漏极区域之间覆盖所述衬底的栅电极; 以及在漏极区内的第二导电类型的核心袋掺杂区域。 核心袋掺杂区域不与漏极区域的边缘重叠。
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公开(公告)号:US20100164018A1
公开(公告)日:2010-07-01
申请号:US12345676
申请日:2008-12-30
申请人: Ming-Cheng Lee , Tao Cheng , Ming-Tzong Yang
发明人: Ming-Cheng Lee , Tao Cheng , Ming-Tzong Yang
IPC分类号: H01L29/78
CPC分类号: H01L29/0847 , H01L29/0692 , H01L29/1045 , H01L29/1083 , H01L29/4983 , H01L29/7833 , H01L29/7835
摘要: A high-voltage MOS transistor includes a gate overlying an active area of a semiconductor substrate; a drain doping region pulled back away from an edge of the gate by a distance L; a first lightly doped region between the gate and the drain doping region; a source doping region in a first ion well; and a second lightly doped region between the gate and the source doping region.
摘要翻译: 高压MOS晶体管包括覆盖半导体衬底的有源区的栅极; 漏极掺杂区域从栅极的边缘拉回距离L; 在栅极和漏极掺杂区域之间的第一轻掺杂区域; 第一离子阱中的源极掺杂区; 以及在栅极和源极掺杂区域之间的第二轻掺杂区域。
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