公开(公告)号：US06696741B1

公开(公告)日：2004-02-24

申请号：US09443742

申请日：1999-11-19

Applicant: Cesare Ronsisvalle ,  Piero Giorgio Fallica ,  Davide Patti

Inventor： Cesare Ronsisvalle ,  Piero Giorgio Fallica ,  Davide Patti

IPC: H01L2358

CPC classification number: H01L29/7802 ,  H01L21/762 ,  H01L29/0653

Abstract: PN junction structure including a first junction region of a first conductivity type, and a second junction region of a second conductivity type, wherein between said first and second junction regions a grid of buried insulating material regions is provided.

Abstract translation: PN结结构，其包括第一导电类型的第一结区域和第二导电类型的第二结区域，其中在所述第一和第二接合区域之间提供掩埋绝缘材料区域格栅。