公开(公告)号：US20100046205A1

公开(公告)日：2010-02-25

申请号：US12547073

申请日：2009-08-25

Applicant: Jui-Yi CHU ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Hsin-Hsien Wu ,  Yi-Chieh Lin

Inventor： Jui-Yi CHU ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Hsin-Hsien Wu ,  Yi-Chieh Lin

IPC: G02F1/13357 ,  H01L29/15

CPC classification number: H01L33/06 ,  H01L33/325

Abstract: The present application relates to an opto-electronic device. The opto-electronic device includes an n-cladding layer, a p-cladding layer and a multi-quantum well structure. The multi-quantum well structure is located between the p-cladding layer and the n-cladding layer, and includes a plurality of barrier layers, a plurality of well layers and a barrier tuning layer. The barrier tuning layer is made by doping the barrier layer adjacent to the p-cladding layer with an impurity therein for changing an energy barrier thereof to improve the light extraction efficiency of the opto-electronic device.

Abstract translation: 本申请涉及一种光电器件。 光电器件包括n包层，p包层和多量子阱结构。 多量子阱结构位于p包覆层和n包层之间，并且包括多个势垒层，多个阱层和势垒调整层。 阻挡层调整层是通过将与p型包层相邻的势垒层与其中的杂质掺杂以改变其能量势垒而制成的，以提高光电器件的光提取效率。