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    Light emitting device
    1.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US08704252B2

    公开(公告)日：2014-04-22

    申请号：US12603929

    申请日：2009-10-22

    申请人： Chun-Kai Wang ,  Schang-Jing Hon ,  Yu-Pin Hsu ,  Jui-Yi Chu ,  Hsin-Hsien Wu ,  Wei-Yu Yen

    发明人： Chun-Kai Wang ,  Schang-Jing Hon ,  Yu-Pin Hsu ,  Jui-Yi Chu ,  Hsin-Hsien Wu ,  Wei-Yu Yen

    IPC分类号： H01L33/00

    CPC分类号： H01L33/06 ,  H01L33/025

    摘要： This invention discloses a light-emitting device comprising a semiconductor stack layer having an active layer of a multiple quantum well (MQW) structure comprising alternate stack layers of quantum well layers and barrier layers, wherein the barrier layers comprise at least one doped barrier layer and one undoped barrier layer. The doped barrier layer can improve the carrier mobility of the electron holes and increase the light-emitting area and the internal quantum efficiency of the active layer.

    摘要翻译： 本发明公开了一种发光器件，其包括具有多量子阱（MQW）结构的有源层的半导体叠层层，其包括量子阱层和阻挡层的交替层叠层，其中阻挡层包括至少一个掺杂阻挡层和 一个未掺杂的阻挡层。 掺杂阻挡层可以改善电子空穴的载流子迁移率，增加有源层的发光面积和内部量子效率。

    Light emitting diode device that includes a three dimensional cloud structure and manufacturing method thereof
    2.
    发明授权
    Light emitting diode device that includes a three dimensional cloud structure and manufacturing method thereof 有权
    包括三维云结构的发光二极管装置及其制造方法

    公开(公告)号：US07902562B2

    公开(公告)日：2011-03-08

    申请号：US12222814

    申请日：2008-08-18

    申请人： Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Jui-Yi Chu ,  Tsung-Kuang Chen

    发明人： Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Jui-Yi Chu ,  Tsung-Kuang Chen

    IPC分类号： H01L33/32

    CPC分类号： H01L33/14

    摘要： A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer, the n-type three-dimensional electron cloud structure, the second n-type semiconductor layer, the active layer and the p-type semiconductor layer are subsequently grown on the substrate.

    摘要翻译： 提供了一种发光二极管器件（LED）器件及其制造方法，其中LED器件包括衬底，第一n型半导体层，n型三维电子云结构，第二n型半导体 层，有源层和p型半导体层。 随后，在基板上生长第一n型半导体层，n型三维电子云结构，第二n型半导体层，有源层和p型半导体层。

    LIGHT EMITTING DEVICE
    4.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20100102295A1

    公开(公告)日：2010-04-29

    申请号：US12603929

    申请日：2009-10-22

    申请人： Chun-Kai WANG ,  Schang-Jing Hon ,  Yu-Pin Hsu ,  Jui-Yi Chu ,  Hsin-Hsien Wu ,  Wei-Yu Yen

    发明人： Chun-Kai WANG ,  Schang-Jing Hon ,  Yu-Pin Hsu ,  Jui-Yi Chu ,  Hsin-Hsien Wu ,  Wei-Yu Yen

    IPC分类号： H01L33/00

    CPC分类号： H01L33/06 ,  H01L33/025

    摘要： This invention discloses a light-emitting device comprising a semiconductor stack layer having an active layer of a multiple quantum well (MQW) structure comprising alternate stack layers of quantum well layers and barrier layers, wherein the barrier layers comprise at least one doped barrier layer and one undoped barrier layer. The doped barrier layer can improve the carrier mobility of the electron holes and increase the light-emitting area and the internal quantum efficiency of the active layer.

    摘要翻译： 本发明公开了一种发光器件，其包括具有多量子阱（MQW）结构的有源层的半导体叠层层，其包括量子阱层和阻挡层的交替层叠层，其中阻挡层包括至少一个掺杂阻挡层和 一个未掺杂的阻挡层。 掺杂阻挡层可以改善电子空穴的载流子迁移率，增加有源层的发光面积和内部量子效率。

    Liquid crystal display panel with reflective spacers and liquid crystal display device using the same
    5.
    发明申请
    Liquid crystal display panel with reflective spacers and liquid crystal display device using the same 有权
    具有反射间隔物的液晶显示面板和使用其的液晶显示装置

    公开(公告)号：US20080106688A1

    公开(公告)日：2008-05-08

    申请号：US11982863

    申请日：2007-11-05

    申请人： Yu-Pin Hsu

    发明人： Yu-Pin Hsu

    IPC分类号： G02F1/1339

    CPC分类号： G02F1/13392 ,  G02F2001/13398 ,  G02F2203/02

    摘要： An exemplary liquid crystal display panel (20) includes a pair of substrates (210, 220) spaced from each other in a vertical direction, a liquid crystal layer (230) sandwiched between the substrates, a plurality of spacers (250) evenly distributed between the substrates to resist compression forces in the vertical direction, and a plurality of pixel regions. Each of the pixel regions defines a reflection region and a transmission region, and each of the spacers includes a reflective layer (252).

    摘要翻译： 示例性液晶显示面板（20）包括在垂直方向上彼此间隔开的一对基板（210,220），夹在基板之间的液晶层（230），均匀地分布在基板 用于抵抗垂直方向上的压缩力的基板和多个像素区域。 每个像素区域限定反射区域和透射区域，并且每个间隔物包括反射层（252）。

    Light-emitting device
    6.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US08294174B2

    公开(公告)日：2012-10-23

    申请号：US12870407

    申请日：2010-08-27

    申请人： Chao-Hsing Chen ,  Yu-Pin Hsu

    发明人： Chao-Hsing Chen ,  Yu-Pin Hsu

    IPC分类号： H01L33/00 ,  H01L29/417 ,  H01L29/86 ,  H01L29/861

    CPC分类号： H01L27/156 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

    摘要： This disclosure discloses a light-emitting device comprising a substrate; and a plurality of rectifying units, comprising a first rectifying unit and a second rectifying unit, formed on the substrate for receiving and regulating an alternating current signal into a direct current signal. Each of the rectifying units comprises a contact layer and a schottky metal layer. The light-emitting device further comprises a plurality of light-emitting diodes receiving the direct current signal; and a first terminal provided on the substrate and covering the contact layer of the first rectifying unit and the schottky metal layer of the second rectifying unit.

    摘要翻译： 本公开公开了一种包括基板的发光装置; 以及多个整流单元，包括形成在所述基板上的第一整流单元和第二整流单元，用于接收和调节交流信号为直流信号。 每个整流单元包括接触层和肖特基金属层。 发光装置还包括接收直流信号的多个发光二极管; 以及设置在基板上并覆盖第一整流单元的接触层和第二整流单元的肖特基金属层的第一端子。

    Light emitting diode device and manufacturing method therof
    7.
    发明申请
    Light emitting diode device and manufacturing method therof 有权
    发光二极管器件及其制造方法

    公开(公告)号：US20090057696A1

    公开(公告)日：2009-03-05

    申请号：US12222814

    申请日：2008-08-18

    申请人： Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Jui-Yi Chu ,  Tsung-Kuang Chen

    发明人： Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Jui-Yi Chu ,  Tsung-Kuang Chen

    IPC分类号： H01L33/00

    CPC分类号： H01L33/14

    摘要： A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer, the n-type three-dimensional electron cloud structure, the second n-type semiconductor layer, the active layer and the p-type semiconductor layer are subsequently grown on the substrate.

    摘要翻译： 提供了一种发光二极管器件（LED）器件及其制造方法，其中LED器件包括衬底，第一n型半导体层，n型三维电子云结构，第二n型半导体 层，有源层和p型半导体层。 随后，在基板上生长第一n型半导体层，n型三维电子云结构，第二n型半导体层，有源层和p型半导体层。

    SYSTEM FOR SENSING ARTERIAL PULSE WAVEFORM
    8.
    发明申请
    SYSTEM FOR SENSING ARTERIAL PULSE WAVEFORM 有权

    公开(公告)号：US20220257126A1

    公开(公告)日：2022-08-18

    申请号：US17622280

    申请日：2020-06-26

    申请人： Yu-Pin Hsu ,  Zemin Liu ,  Mona Mostafa Hella

    发明人： Yu-Pin Hsu ,  Zemin Liu ,  Mona Mostafa Hella

    IPC分类号： A61B5/021 ,  A61B5/00 ,  H03M1/10 ,  H03M1/46

    摘要： One embodiment provides an offset calibration circuitry configured to compensate an offset voltage of a resistive bridge sensor. The offset calibration circuitry includes a first current digital to analog converter (IDAC) coupled to a first successive approximation register (SAR), a second IDAC coupled to a second SAR and an SAR controller circuitry. The first IDAC is configured to couple to a negative voltage port of a resistive bridge sensor. The first SAR is configured to store a circuitry first digital value. The second IDAC is configured to couple to a positive voltage port of the resistive bridge sensor. The second SAR is configured to store a second digital value. The SAR controller circuitry is configured to adjust each bit of the first SAR and each bit of the second SAR based, at least in part, on an output of a comparator. The comparator is configured to compare a voltage on the negative voltage port or a voltage on the positive voltage port to a common mode voltage.

    GaN semiconductor device
    9.
    发明申请
    GaN semiconductor device 有权
    GaN半导体器件

    公开(公告)号：US20090256159A1

    公开(公告)日：2009-10-15

    申请号：US12382955

    申请日：2009-03-27

    申请人： Yi-Chieh Lin ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chi-Ming Tsai

    发明人： Yi-Chieh Lin ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chi-Ming Tsai

    IPC分类号： H01L33/00 ,  H01L29/20

    CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/007

    摘要： This invention discloses a GaN semiconductor device comprising a substrate; a metal-rich nitride compound thin film on the substrate; a buffer layer formed on the metal-rich nitride compound thin film, and a semiconductor stack layer on the buffer layer wherein the metal-dominated nitride compound thin film covers a partial upper surface of the substrate. Because metal-rich nitride compound is amorphous, the epitaxial growth direction of the buffer layer grows upwards in the beginning and then turns laterally, and the epitaxy defects of the buffer layer also bend with the epitaxial growth direction of the buffer layer. Therefore, the probability of the epitaxial defects extending to the semiconductor stack layer is reduced and the reliability of the GaN semiconductor device is improved.

    摘要翻译： 本发明公开了一种包括基板的GaN半导体器件; 在基板上形成富金属的氮化物化合物薄膜; 形成在富金属氮化物化合物薄膜上的缓冲层，以及缓冲层上的半导体堆叠层，其中金属主导的氮化物化合物薄膜覆盖基板的部分上表面。 因为富金属的氮化物是非晶体，所以缓冲层的外延生长方向在开始时向上生长然后横向变化，并且缓冲层的外延缺陷也随着缓冲层的外延生长方向而弯曲。 因此，延伸到半导体堆叠层的外延缺陷的概率降低，并且提高了GaN半导体器件的可靠性。