公开(公告)号：US09130107B2

公开(公告)日：2015-09-08

申请号：US13223033

申请日：2011-08-31

Applicant: Yi Chieh Lin ,  Rong Ren Lee

Inventor： Yi Chieh Lin ,  Rong Ren Lee

IPC: H01L33/00 ,  H01L33/14

CPC classification number: H01L33/14 ,  H01L33/0079

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; a first light-emitting stack comprising a first active layer; a bonding interface formed between the substrate and the first light-emitting stack; and a contact structure formed on the first light-emitting stack and comprising first, second and third contact layers. Each of the first, second and third contact layers comprises a doping material.

Abstract translation: 本公开公开了一种发光装置。 发光装置包括：基板; 包括第一有源层的第一发光堆叠; 形成在所述基板和所述第一发光叠层之间的接合界面; 以及形成在第一发光叠层上并包括第一，第二和第三接触层的接触结构。 第一，第二和第三接触层中的每一个包括掺杂材料。

公开(公告)号：US08884267B2

公开(公告)日：2014-11-11

申请号：US13546636

申请日：2012-07-11

Applicant: Yi-Chieh Lin ,  Rong-Ren Lee

Inventor： Yi-Chieh Lin ,  Rong-Ren Lee

IPC: H01L29/06 ,  H01L27/15 ,  H01L29/66 ,  H01L33/06 ,  H01L33/00 ,  H01L33/08 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/32

Abstract: A light-emitting element, comprises: a first active layer, generating a first light comprising a first dominant wavelength, wherein the first active layer comprises a first quantum well comprising a first quantum-well band gap and a second quantum well comprising a second quantum-well band gap, and the first quantum well and the second quantum well are alternately stacked to form the first active layer, wherein a difference between the first quantum-well band gap and the second quantum-well band gap is between 0.06eV and 0.1eV, and each of the first quantum-well and the second quantum-well is devoid of a barrier; and a second active layer on the first active layer, generating a second light comprising a second dominant wavelength; wherein a difference between the first dominant wavelength and the second dominant wavelength is 150nm to 220nm.

Abstract translation: 发光元件包括：第一有源层，产生包括第一主波长的第一光，其中所述第一有源层包括第一量子阱，所述第一量子阱包括第一量子阱带隙和包括第二量子阱的第二量子阱 并且第一量子阱和第二量子阱交替堆叠以形成第一有源层，其中第一量子阱带隙和第二量子阱带隙之间的差在0.06eV与0.1之间 eV，第一量子阱和第二量子阱中的每一个都没有屏障; 和在所述第一有源层上的第二有源层，产生包括第二主波长的第二光; 其中所述第一主波长和所述第二主波长之间的差为150nm至220nm。

公开(公告)号：US20130049042A1

公开(公告)日：2013-02-28

申请号：US13223033

申请日：2011-08-31

Applicant: Yi Chieh Lin ,  Rong Ren Lee

Inventor： Yi Chieh Lin ,  Rong Ren Lee

IPC: H01L33/60

CPC classification number: H01L33/14 ,  H01L33/0079

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; a first light-emitting stack comprising a first active layer; a bonding interface formed between the substrate and the first light-emitting stack; and a contact structure formed on the first light-emitting stack and comprising first, second and third contact layers. Each of the first, second and third contact layers comprises a doping material.

Abstract translation: 本公开公开了一种发光装置。 发光装置包括：基板; 包括第一有源层的第一发光堆叠; 形成在所述基板和所述第一发光叠层之间的接合界面; 以及形成在第一发光叠层上并包括第一，第二和第三接触层的接触结构。 第一，第二和第三接触层中的每一个包括掺杂材料。

公开(公告)号：US20130049034A1

公开(公告)日：2013-02-28

申请号：US13611681

申请日：2012-09-12

Applicant: Yi Chieh LIN

Inventor： Yi Chieh LIN

IPC: H01L33/08

CPC classification number: H01L33/30 ,  H01L33/40

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; a first light-emitting stack comprising a first active layer; a bonding interface formed between the substrate and the first light-emitting stack; and a contact structure formed between the first light-emitting stack and the bonding interface and comprising a first contact layer and a second contact layer closer to the bonding interface than the first contact layer; wherein the first contact layer and the second contact layer comprises the same material and the first contact layer has an impurity concentration lower than that of the second contact layer.

Abstract translation: 本公开公开了一种发光装置。 发光装置包括：基板; 包括第一有源层的第一发光堆叠; 形成在所述基板和所述第一发光叠层之间的接合界面; 以及形成在第一发光叠层和接合界面之间的接触结构，并且包括比第一接触层更靠近接合界面的第一接触层和第二接触层; 其中所述第一接触层和所述第二接触层包含相同的材料，并且所述第一接触层的杂质浓度低于所述第二接触层的杂质浓度。

公开(公告)号：US20120015612A1

公开(公告)日：2012-01-19

申请号：US13175891

申请日：2011-07-04

Applicant: Yi-Chieh Lin ,  Yu-Hsin Chen

Inventor： Yi-Chieh Lin ,  Yu-Hsin Chen

IPC: H04B1/44

CPC classification number: H04B1/48

Abstract: A wireless transceiver apparatus is provided. The wireless transceiver apparatus includes a signal transmitting circuit, a circuit unit, and a signal receiving circuit. The signal transmitting circuit includes a first output port and is utilized for outputting a first transmission signal via the first output port in a transmission mode. The circuit unit is coupled to the first output port of the signal transmitting circuit. The signal receiving circuit includes a first receiving port and is utilized for receiving a first wireless communication signal via the first receiving port in a reception mode. The first output port is coupled to the first receiving port at a first node. The circuit unit forms a frequency resonance mode to increase an impedance value of the signal transmitting circuit seen by a signal at the first node.

Abstract translation: 提供了一种无线收发器装置。 无线收发装置包括信号发送电路，电路单元和信号接收电路。 信号发送电路包括第一输出端口，用于以传输模式经由第一输出端口输出第一传输信号。 电路单元耦合到信号发送电路的第一输出端口。 信号接收电路包括第一接收端口，用于以接收模式经由第一接收端口接收第一无线通信信号。 第一输出端口在第一节点处耦合到第一接收端口。 电路单元形成频率共振模式，以增加由第一节点处的信号所看到的信号发送电路的阻抗值。

公开(公告)号：US20110132447A1

公开(公告)日：2011-06-09

申请号：US12962108

申请日：2010-12-07

Applicant: YI-CHIEH LIN ,  SHIH-CHANG LEE

Inventor： YI-CHIEH LIN ,  SHIH-CHANG LEE

IPC: H01L31/06

CPC classification number: H01L31/1892 ,  H01L31/052 ,  H01L31/0543 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/1852 ,  Y02E10/52 ,  Y02E10/544

Abstract: A multi junction solar cell device includes a substrate having a first lattice constant, a first optoelectronic conversion layer having a second lattice constant, and a second optoelectronic conversion layer having a third lattice constant wherein the value of the first lattice constant is between that of the second lattice constant and the third lattice constant.

Abstract translation: 多结太阳能电池器件包括具有第一晶格常数的衬底，具有第二晶格常数的第一光电转换层和具有第三晶格常数的第二光电转换层，其中第一晶格常数的值在 第二晶格常数和第三晶格常数。

公开(公告)号：US20110114164A1

公开(公告)日：2011-05-19

申请号：US12948279

申请日：2010-11-17

Applicant: Yi-Chieh Lin ,  Shih-Chang Lee

Inventor： Yi-Chieh Lin ,  Shih-Chang Lee

IPC: H01L31/06

CPC classification number: H01L31/0735 ,  Y02E10/544

Abstract: Disclosed is a solar cell including a first base layer, a second base layer on the first base layer, and an emitter layer on the second base layer. Furthermore, a window layer may be disposed on the emitter, and/or a back surface field (BSF) layer may be disposed under the first base layer.

Abstract translation: 公开了一种太阳能电池，其包括第一基底层，第一基底层上的第二基底层和第二基底层上的发射极层。 此外，窗口层可以设置在发射器上，和/或背面场（BSF）层可以设置在第一基底层下方。

公开(公告)号：US20090256159A1

公开(公告)日：2009-10-15

申请号：US12382955

申请日：2009-03-27

Applicant: Yi-Chieh Lin ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chi-Ming Tsai

Inventor： Yi-Chieh Lin ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chi-Ming Tsai

IPC: H01L33/00 ,  H01L29/20

CPC classification number: H01L33/12 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/007

Abstract: This invention discloses a GaN semiconductor device comprising a substrate; a metal-rich nitride compound thin film on the substrate; a buffer layer formed on the metal-rich nitride compound thin film, and a semiconductor stack layer on the buffer layer wherein the metal-dominated nitride compound thin film covers a partial upper surface of the substrate. Because metal-rich nitride compound is amorphous, the epitaxial growth direction of the buffer layer grows upwards in the beginning and then turns laterally, and the epitaxy defects of the buffer layer also bend with the epitaxial growth direction of the buffer layer. Therefore, the probability of the epitaxial defects extending to the semiconductor stack layer is reduced and the reliability of the GaN semiconductor device is improved.

Abstract translation: 本发明公开了一种包括基板的GaN半导体器件; 在基板上形成富金属的氮化物化合物薄膜; 形成在富金属氮化物化合物薄膜上的缓冲层，以及缓冲层上的半导体堆叠层，其中金属主导的氮化物化合物薄膜覆盖基板的部分上表面。 因为富金属的氮化物是非晶体，所以缓冲层的外延生长方向在开始时向上生长然后横向变化，并且缓冲层的外延缺陷也随着缓冲层的外延生长方向而弯曲。 因此，延伸到半导体堆叠层的外延缺陷的概率降低，并且提高了GaN半导体器件的可靠性。

公开(公告)号：US08649740B2

公开(公告)日：2014-02-11

申请号：US13175891

申请日：2011-07-04

Applicant: Yi-Chieh Lin ,  Yu-Hsin Chen

Inventor： Yi-Chieh Lin ,  Yu-Hsin Chen

IPC: H04B1/44

CPC classification number: H04B1/48

Abstract: A wireless transceiver apparatus is provided. The wireless transceiver apparatus includes a signal transmitting circuit, a circuit unit, and a signal receiving circuit. The signal transmitting circuit includes a first output port and is utilized for outputting a first transmission signal via the first output port in a transmission mode. The circuit unit is coupled to the first output port of the signal transmitting circuit. The signal receiving circuit includes a first receiving port and is utilized for receiving a first wireless communication signal via the first receiving port in a reception mode. The first output port is coupled to the first receiving port at a first node. The circuit unit forms a frequency resonance mode to increase an impedance value of the signal transmitting circuit seen by a signal at the first node.

Abstract translation: 提供了一种无线收发器装置。 无线收发装置包括信号发送电路，电路单元和信号接收电路。 信号发送电路包括第一输出端口，用于以传输模式经由第一输出端口输出第一传输信号。 电路单元耦合到信号发送电路的第一输出端口。 信号接收电路包括第一接收端口，用于以接收模式经由第一接收端口接收第一无线通信信号。 第一输出端口在第一节点处耦合到第一接收端口。 电路单元形成频率共振模式，以增加由第一节点处的信号所看到的信号发送电路的阻抗值。

公开(公告)号：US08487317B2

公开(公告)日：2013-07-16

申请号：US12382955

申请日：2009-03-27

Applicant: Yi-Chieh Lin ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chi-Ming Tsai

Inventor： Yi-Chieh Lin ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chi-Ming Tsai

IPC: H01L33/00 ,  H01L29/20

CPC classification number: H01L33/12 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/007

Abstract: This invention discloses a GaN semiconductor device comprising a substrate; a metal-rich nitride compound thin film on the substrate; a buffer layer formed on the metal-rich nitride compound thin film, and a semiconductor stack layer on the buffer layer wherein the metal-dominated nitride compound thin film covers a partial upper surface of the substrate. Because metal-rich nitride compound is amorphous, the epitaxial growth direction of the buffer layer grows upwards in the beginning and then turns laterally, and the epitaxy defects of the buffer layer also bend with the epitaxial growth direction of the buffer layer. Therefore, the probability of the epitaxial defects extending to the semiconductor stack layer is reduced and the reliability of the GaN semiconductor device is improved.