公开(公告)号：US20120042737A1

公开(公告)日：2012-02-23

申请号：US13086382

申请日：2011-04-13

申请人： Piero M. Armenante ,  Yimin Wang

发明人： Piero M. Armenante ,  Yimin Wang

IPC分类号： G01N33/00

CPC分类号： G01N33/15 ,  B01F1/0011 ,  B01F7/00225 ,  B01F7/18

摘要： In the pharmaceutical industry, dissolution testing is a critical step in quality control and a standard method for assessing batch-to-batch consistency of solid oral drug delivery systems, such as tablets. One of the most widely used dissolution test devices is the UPS Apparatus 2 (paddle). At present, dissolution testing remains susceptible to significant error and test failures. Previous studies indicate that poor reproducibility of dissolution testing data and inconsistency of dissolution results can arise from the complex hydrodynamics present in the unbaffled, hemispherical-bottom, agitated vessel that constitute the UPS Apparatus 2. In the present invention, a novel dissolution testing apparatus was constructed in which the impeller was placed off-center with respect to the center point of the vessel bottom. It has been shown that the dissolution profiles in the present invention were not significantly affected by tablet location as confirmed by the value of the factors f1 and f2, which were well within the accepted ranges and did not change appreciably with the tablet location. By contrast, the corresponding dissolution tests for current systems failed these similarity tests. In addition, the flow fields near the vessel bottom were obtained via CFD simulation and were found to be significantly more uniform in e present invention than in the current standard apparatus. The present invention has the potential of becoming a valid alternative to the standard USP dissolution testing apparatuses used for dissolution testing.

摘要翻译： 在制药行业，溶出度测试是质量控制的关键步骤，也是评估固体口服药物输送系统（如片剂）批次间一致性的标准方法。 最广泛使用的溶解测试装置之一是UPS装置2（桨）。 目前，溶出度测试仍然容易发生重大错误和测试失败。 以前的研究表明，溶解测试数据的可重复性差和溶解结果的不一致性可能来自构成UPS装置2的未封闭的，半球底的搅拌容器中存在的复杂的流体动力学。在本发明中，新的溶出测试装置是 其中叶轮相对于容器底部的中心点偏离中心。 已经表明，本发明中的溶出曲线不受片剂位置的显着影响，如通过因子f1和f2的值所证实的，其值在所接受的范围内，并且与片剂位置没有明显变化。 相比之下，目前系统的相应溶出度测试失败了这些相似性测试。 另外，通过CFD模拟获得容器底部附近的流场，并且在本发明中发现与现有的标准装置相比，其均匀性更均匀。 本发明具有成为用于溶出测试的标准USP溶出测试装置的有效替代品的潜力。

公开(公告)号：US20110312457A1

公开(公告)日：2011-12-22

申请号：US12819917

申请日：2010-06-21

申请人： Yimin Wang

发明人： Yimin Wang

IPC分类号： F16H55/30

CPC分类号： F16H55/30 ,  F16H55/06

摘要： The present sprocket wheel invention enhances the efficiency of the sprockets made of two materials, e.g., a lighter material at central portion of the sprocket and a hard material at peripheral portion of the sprocket comprising teeth, by drilling half holes on the outer edge of the central portion and half holes on the inner edge of the peripheral portion of the sprocket. In the preferred embodiment, half of the thickness of the sprocket is the entire hole on the peripheral portion of the sprocket with harder materials, and the other half of the thickness of the sprocket is designed to have said half holes for rivets to attach the central portion and the peripheral portion of the sprocket.

摘要翻译： 本链轮轮发明提高了由两种材料制成的链轮的效率，例如，在链轮的中心部分处的较轻的材料和在包括齿的链轮的周边部分处的硬质材料，通过在所述链轮的外边缘上钻出半孔 在链轮的周边部分的内边缘上的中心部分和半孔。 在优选实施例中，链轮的厚度的一半是具有较硬材料的链轮的周边部分上的整个孔，并且链轮的另一半厚度被设计成具有用于铆钉的所述半孔以将中心 部分和链轮的周边部分。

公开(公告)号：US06284594B1

公开(公告)日：2001-09-04

申请号：US09580607

申请日：2000-05-30

申请人： Yong Ju ,  Kai Shao ,  Yimin Wang ,  Shao-Fu Sanford Chu

发明人： Yong Ju ,  Kai Shao ,  Yimin Wang ,  Shao-Fu Sanford Chu

IPC分类号： H01L218242

CPC分类号： H01L27/0629 ,  H01L21/3144 ,  H01L28/40

摘要： A process for simultaneously forming a polysilicon gate structure, for a transfer gate transistor, and a polysilicon top plate, for a capacitor structure, on an underlying planar surface, has been developed. The process features the formation of a polysilicon bottom plate, for the capacitor structure, embedded in a first opening in composite insulator layer, and the formation of an active device region, for a transfer gate transistor structure, via the selective growth of an epitaxial silicon layer, in a second opening of the composite insulator layer, resulting in a planar top surface topography. The presence of this topography reduces the risk of residual polysilicon, present after patterning of the polysilicon gate structure, and of the capacitor, polysilicon top plate.

摘要翻译： 已经开发了用于在底层平面上形成用于电容器结构的传输栅极晶体管和多晶硅顶板的多晶硅栅极结构的工艺。 该方法的特征在于形成多晶硅底板，用于电容器结构，嵌入在复合绝缘体层中的第一开口中，并且通过外延硅的选择性生长形成用于传输栅晶体管结构的有源器件区 层，在复合绝缘体层的第二开口中，产生平坦的顶表面形貌。 这种形貌的存在降低了在多晶硅栅极结构图案化之后存在的残余多晶硅以及电容器，多晶硅顶板的风险。

公开(公告)号：US10371831B2

公开(公告)日：2019-08-06

申请号：US13289936

申请日：2011-11-04

申请人： Kanai S. Shah ,  Charles Brecher ,  Yimin Wang ,  Gary Baldoni ,  William Rhodes

发明人： Kanai S. Shah ,  Charles Brecher ,  Yimin Wang ,  Gary Baldoni ,  William Rhodes

IPC分类号： G21K4/00 ,  C01F17/00 ,  C04B35/44 ,  C09K11/77 ,  G01T1/202 ,  C04B35/645 ,  G01T1/20

摘要： Scintillator materials based on mixed garnet compositions, as well as corresponding methods and systems, are described.