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34 条记录 (耗时 0.022 秒)

    Water conditioned smoking device
    1.
    发明授权
    Water conditioned smoking device 有权

    公开(公告)号：US10299510B1

    公开(公告)日：2019-05-28

    申请号：US14545081

    申请日：2015-03-23

    申请人： Nicholas William Rhodes

    发明人： Nicholas William Rhodes

    IPC分类号： A24F1/30 ,  A24F1/02

    摘要： A water conditioned smoking device such as a bong, hookah or the like comprises a source of pressurized air that communicates with a sparger placed in a conditioning water retention chamber of the device such that the pressurized gas enters the chamber below the level of water to be used in the conditioning bath and thereby aerates the bath and smoke. The improved device produces superior smoke conditioning.

    Sintered polycrystalline terbium aluminum garnet and use thereof in magneto-optical devices
    2.
    发明申请
    Sintered polycrystalline terbium aluminum garnet and use thereof in magneto-optical devices 失效
    烧结多晶铽铝石榴石及其在磁光装置中的应用

    公开(公告)号：US20070238604A1

    公开(公告)日：2007-10-11

    申请号：US11399198

    申请日：2006-04-06

    申请人： Yin Tang ,  Anthony Sutorik ,  Long Nguyen ,  Tom Hinklin ,  William Rhodes ,  David Scerbak

    发明人： Yin Tang ,  Anthony Sutorik ,  Long Nguyen ,  Tom Hinklin ,  William Rhodes ,  David Scerbak

    IPC分类号： C09K11/77 ,  C04B35/50 ,  C04B35/51 ,  C04B35/00 ,  C04B35/64

    CPC分类号： C04B35/50 ,  B82Y30/00 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/764 ,  C04B2235/781 ,  C04B2235/9653 ,  C09K11/7749

    摘要： A composition is provided that includes a plurality of calcined particles of terbium aluminum oxide having a mean particle domain size of between 30 and 600 nanometers. A translucent article having a surface includes polycrystalline terbium aluminum garnet having a mean grain size from 1 to 10 microns and light scattering inclusions of aluminum-rich oxide and/or terbium-rich oxide that are present at less than 2 surface area percent of the surface. A process for forming such an article involves sintering the above provided composition at a temperature between 1500° C. and 1700° C. to yield a sintered article. The article has improved translucency and even transparency as sintering is performed under vacuum at a temperature between 1610° C. and 1680° C. Hot isostatic pressing alone or in combination with article polishing also improves article translucency.

    摘要翻译： 提供了一种组合物，其包括多个平均粒子域尺寸在30和600纳米之间的氧化铽的煅烧颗粒。 具有表面的半透明制品包括平均粒度为1至10微米的多晶铽铝石榴石和富含Al的氧化物和/或富含铽的氧化物的光散射夹杂物，其表面积小于2的表面积百分比 。 形成这种制品的方法包括在1500℃和1700℃之间的温度下烧结上述所提供的组合物，得到烧结制品。 该制品具有改善的半透明度和均匀的透明度，因为在1610℃和1680℃之间的温度下在真空下进行烧结。单独的热等静压或与制品抛光相结合也可以改善制品半透明度。

    Soybean cultivar S030010
    3.
    发明申请
    Soybean cultivar S030010 有权

    公开(公告)号：US20050114928A1

    公开(公告)日：2005-05-26

    申请号：US10720704

    申请日：2003-11-24

    申请人： William Eby ,  William Rhodes

    发明人： William Eby ,  William Rhodes

    IPC分类号： A01H5/10 ,  A01H5/00 ,  C12N5/04

    CPC分类号： A01H5/10

    摘要： A novel soybean cultivar, designated S030010, is disclosed. The invention relates to the seeds of soybean cultivar S030010, to the plants of soybean S030010 and to methods for producing a soybean plant produced by crossing the cultivar S030010 with itself or another soybean variety. The invention further relates to hybrid soybean seeds and plants produced by crossing the cultivar S030010 with another soybean cultivar.

    Cable supporting device
    4.
    发明授权
    Cable supporting device 失效
    电缆支撑装置

    公开(公告)号：US06332594B2

    公开(公告)日：2001-12-25

    申请号：US09769643

    申请日：2001-01-25

    申请人： Michael James Shelton ,  Randy Scott Baker ,  Keith William Boutillier ,  Brian William Rhodes

    发明人： Michael James Shelton ,  Randy Scott Baker ,  Keith William Boutillier ,  Brian William Rhodes

    IPC分类号： F16L308

    CPC分类号： F16L3/02

    摘要： A device for supporting electrical cables and the like which includes a saddle for receiving and supporting the cables, and the saddles has a support surface formed with a rounded configuration that curves away from is centerline and downwardly from the centerline in both directions with a radius of curvature that provides a contour generally similar to the contour of the cables supported thereat.

    摘要翻译： 一种用于支撑电缆等的装置，其包括用于接收和支撑电缆的鞍座，并且鞍座具有形成为具有圆形构造的支撑表面，该支撑表面从两个方向的中心线向中心线向下弯曲，半圆形 曲率提供了大致类似于在其上支撑的电缆的轮廓的轮廓。

    Soybean cultivar 2585921658
    8.
    发明授权
    Soybean cultivar 2585921658 有权
    大豆品种2585921658

    公开(公告)号：US08058520B2

    公开(公告)日：2011-11-15

    申请号：US12494069

    申请日：2009-06-29

    申请人： William Rhodes

    发明人： William Rhodes

    IPC分类号： A01H5/00 ,  A01H5/10 ,  A01H1/00 ,  C12N5/04

    CPC分类号： A01H5/10

    摘要： A soybean cultivar designated 2585921658 is disclosed. The invention relates to the seeds of soybean cultivar 2585921658, to the plants of soybean 2585921658, to plant parts of soybean cultivar 2585921658 and to methods for producing a soybean plant produced by crossing soybean cultivar 2585921658 with itself or with another soybean variety. The invention also relates to methods for producing a soybean plant containing in its genetic material one or more transgenes and to the transgenic soybean plants and plant parts produced by those methods. This invention also relates to soybean cultivars or breeding cultivars and plant parts derived from soybean variety 2585921658, to methods for producing other soybean cultivars, lines or plant parts derived from soybean cultivar 2585921658 and to the soybean plants, varieties, and their parts derived from use of those methods. The invention further relates to hybrid soybean seeds, plants and plant parts produced by crossing the cultivar 2585921658 with another soybean cultivar.

    摘要翻译： 公开了一种名为2585921658的大豆品种。 本发明涉及大豆品种2585921658的种子，大豆种子2585921658的植物，大豆品种2585921658的植物部分以及通过大豆品种2585921658与其他大豆品种杂交而生产的大豆植物的方法。 本发明还涉及含有一种或多种转基因的遗传物质的大豆植物的制备方法以及通过这些方法制备的转基因大豆植物和植物部分的方法。 本发明还涉及来自大豆品种2585921658的大豆品种或育种品种和植物部分，其生产来自大豆品种2585921658的其他大豆品种，系或植物部分的方法以及大豆植物，品种及其从使用中衍生的部分 的这些方法。 本发明还涉及杂交大豆种子，通过将品种2585921658与另一个大豆品种杂交而产生的植物和植物部分。

    CHALCOGENIDE TARGET AND METHOD
    9.
    发明申请
    CHALCOGENIDE TARGET AND METHOD 审中-公开
    CHALCOGENIDE目标和方法

    公开(公告)号：US20090107834A1

    公开(公告)日：2009-04-30

    申请号：US11927605

    申请日：2007-10-29

    申请人： Mengqi Ye ,  Rong Tao ,  Hua Chung ,  Goichi Yoshidome ,  William Rhodes ,  Peijun Ding

    发明人： Mengqi Ye ,  Rong Tao ,  Hua Chung ,  Goichi Yoshidome ,  William Rhodes ,  Peijun Ding

    IPC分类号： C23C14/06 ,  C23C14/34 ,  C23C14/35

    CPC分类号： C23C14/06 ,  C23C14/0623 ,  C23C14/3407 ,  C23C14/3414 ,  C23C14/345 ,  C23C14/351 ,  C23C14/358 ,  H01J37/3408 ,  H01J37/3426 ,  H01J37/3455

    摘要： A sputtering target for a sputtering chamber comprises a sputtering plate composed of a chalcogenide material comprising an average yield strength of from about 40 MPa to about 120 MPa and a thermal conductivity of at least about 2.8 W/(m·K). In one version the sputtering plate is composed of a chalcogenide material with a stoichiometric ratio that varies by less than about 5% throughout the body of the sputtering plate. In another version, the sputtering plate is composed of a chalcogenide material having an average grain size of at least 20 microns, and an oxygen content of less than 600 weight ppm. The sputtering target is sputtered by applying a pulsed DC voltage to the sputtering target.

    摘要翻译： 溅射室的溅射靶包括由硫族化物材料构成的溅射板，该溅射板包括约40MPa至约120MPa的平均屈服强度和至少约2.8W /（m.K）的热导率。 在一个版本中，溅射板由化学计量比在溅射板的整个体内变化小于约5％的硫族化物材料组成。 在另一个版本中，溅射板由平均粒度为至少20微米，氧含量小于600重量ppm的硫族化物材料组成。 通过向溅射靶施加脉冲的DC电压来溅射溅射靶。

    Soybean cultivar 495.RC
    10.
    发明授权
    Soybean cultivar 495.RC 失效
    大豆品种495.RC

    公开(公告)号：US07365245B2

    公开(公告)日：2008-04-29

    申请号：US11436428

    申请日：2006-05-18

    申请人： John A. Schillinger ,  William Rhodes

    发明人： John A. Schillinger ,  William Rhodes

    IPC分类号： A01H5/00 ,  A01H5/10 ,  A01H1/00 ,  C12N5/04

    CPC分类号： A01H5/10

    摘要： A soybean cultivar designated 495.RC is disclosed. The invention relates to the seeds of soybean cultivar 495.RC, to the plants of soybean 495.RC, to plant parts of soybean cultivar 495.RC and to methods for producing a soybean plant produced by crossing soybean cultivar 495.RC with itself or with another soybean variety. The invention also relates to methods for producing a soybean plant containing in its genetic material one or more transgenes and to the transgenic soybean plants and plant parts produced by those methods. This invention also relates to soybean cultivars or breeding cultivars and plant parts derived from soybean variety 495.RC, to methods for producing other soybean cultivars, lines or plant parts derived from soybean cultivar 495.RC and to the soybean plants, varieties, and their parts derived from use of those methods. The invention further relates to hybrid soybean seeds, plants and plant parts produced by crossing the cultivar 495.RC with another soybean cultivar.

    摘要翻译： 披露了一个名为495.RC的大豆品种。 本发明涉及大豆品种495.RC的种子，大豆495.RC的植物，种植大豆品种495.RC的部分，以及通过将大豆品种495.RC与其本身或其自身杂交产生的大豆植物的生产方法 与另一大豆品种。 本发明还涉及含有一种或多种转基因的遗传物质的大豆植物的制备方法以及通过这些方法制备的转基因大豆植物和植物部分的方法。 本发明还涉及来自大豆品种495.RC的大豆品种或育种品种和植物部分，其生产其他大豆品种，来自大豆品种495.RC的大豆品种，系或植物部分的方法以及大豆植物，品种及其大豆品种 派生自使用这些方法的部分。 本发明还涉及杂交大豆种子，通过将品种495.RC与另一个大豆品种杂交产生的植物和植物部分。