公开(公告)号：US06720037B2

公开(公告)日：2004-04-13

申请号：US09949616

申请日：2001-09-12

申请人： Yukito Aota ,  Masahiro Kanai

发明人： Yukito Aota ,  Masahiro Kanai

IPC分类号： H05H146

CPC分类号： H01J37/32532 ,  C23C16/515

摘要： In a plasma processing method, on a back side of a cathode electrode is provided at least one conductor plate d.c. potentially insulated from the cathode electrode and an opposing electrode, and the cathode electrode and the conductor plate are enclosed with a shielding wall such that a ratio of an inter-electrode coupling capacitance provided by the cathode electrode and the opposing electrode to a coupling capacitance provided by the cathode electrode and a bottom surface of the shielding wall on the back side of the conductor plate is not less than a predetermined value. Thereby, a high-quality, high-speed plasma processing is realized.

摘要翻译： 在等离子体处理方法中，在阴极电极的背面设置有至少一个导体板d.c. 可能与阴极电极和对置电极绝缘，并且阴极电极和导体板被屏蔽壁包围，使得由阴极电极和相对电极提供的电极间耦合电容与提供的耦合电容的比率 通过阴极电极和导体板背侧的屏蔽壁的底面不小于预定值。 由此，实现了高质量的高速等离子体处理。

公开(公告)号：US6031198A

公开(公告)日：2000-02-29

申请号：US80922

申请日：1998-05-19

申请人： Koichiro Moriyama ,  Yukito Aota ,  Masahiro Kanai ,  Hirokazu Otoshi

发明人： Koichiro Moriyama ,  Yukito Aota ,  Masahiro Kanai ,  Hirokazu Otoshi

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  B23K9/00

CPC分类号： H01J37/32165 ,  H01J37/32935 ,  H01J37/3299

摘要： A plasma processing method for processing a substrate includes a discharge beginning step of supplying a second high-frequency power into a processing chamber through an impedance matching circuit and then supplying a first high-frequency power larger than a power used in processing into the processing chamber to generate a plasma. An adjustment step of reducing the first high-frequency power to be close to the value used in processing, increasing the second high-frequency power to be close to the value in processing, and then adjusting the first high-frequency power to obtain a plasma strength of a predetermined value is part of the method. The plasma processing step of causing the impedance matching circuit to perform a matching operation and simultaneously adjusting the first high-frequency power to obtain a plasma strength of a desired value in processing is also part of the method. Plasma discharge can be automatically, smoothly begun with high reproducibility, and stable plasma discharge can be maintained. Even in the case of disappearance of discharge, plasma discharge can be quickly restarted.

摘要翻译： 用于处理衬底的等离子体处理方法包括：放电开始步骤，通过阻抗匹配电路将第二高频电力提供到处理室，然后将大于处理中使用的功率的第一高频功率提供给处理室 以产生等离子体。 将第一高频功率降低到接近于处理中使用的值的调整步骤，将第二高频功率提高到接近处理值，然后调整第一高频功率以获得等离子体 预定值的强度是该方法的一部分。 等离子体处理步骤是使阻抗匹配电路执行匹配操作并且同时调节第一高频功率以获得处理中期望值的等离子体强度。 等离子体放电可以以高再现性自动平稳地开始，并且可以保持稳定的等离子体放电。 即使在放电消失的情况下，可以快速重新开始等离子体放电。