公开(公告)号：US12123093B2

公开(公告)日：2024-10-22

申请号：US17674856

申请日：2022-02-18

Applicant: FUJIFILM CORPORATION

Inventor： Yoshihiko Mochizuki ,  Tomokazu Seki

IPC: H05H1/26 ,  C23C16/515

CPC classification number: C23C16/515 ,  H05H1/26

Abstract: Provided is a film forming device that deposits, on a substrate, a product generated by decomposing raw material gas by a plasma discharged from a discharge port of a double tube, the device including: an inner tube through which raw material gas containing a film-forming raw material flows and is guided to the discharge port on a downstream side; an outer tube that has the inner tube inserted thereinto and through which plasma-generating gas flows and a plasma generated by discharge is guided to the discharge port on the downstream side; a first electrode that is formed in an annular shape around the outer tube and grounded; and a second electrode that is formed in an annular shape around the outer tube and to which a voltage is applied. The second electrode is disposed on the downstream side with respect to the first electrode, and assuming that a length of the second electrode in an axial direction is L1 and a diameter of the outer tube is D1, a relationship of L1≥D1 is satisfied.

公开(公告)号：US12100597B2

公开(公告)日：2024-09-24

申请号：US17712017

申请日：2022-04-01

Applicant: ASM IP Holding B.V.

Inventor： Eiichiro Shiba

IPC: H01L21/308 ,  C23C16/34 ,  C23C16/455 ,  C23C16/515 ,  C23C16/56 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/3086 ,  C23C16/345 ,  C23C16/45538 ,  C23C16/45544 ,  C23C16/515 ,  C23C16/56 ,  H01J37/32449 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31122 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/3081

Abstract: Methods of forming patterned structures suitable for a multiple patterning process are disclosed. Exemplary methods include forming a silicon nitride layer overlying the substrate by providing a silicon precursor to the reaction chamber for a silicon precursor pulse period, providing a nitrogen reactant to the reaction chamber, providing a hydrogen reactant to the reaction chamber, and providing a plasma power to form a plasma within the reaction chamber for a plasma pulse period. An etch profile of sacrificial features on the substrate can be controlled by controlling an amount of hydrogen provided to the reaction chamber and/or using other process parameters.

公开(公告)号：US20240158645A1

公开(公告)日：2024-05-16

申请号：US18548343

申请日：2022-02-25

Applicant: JIANGSU FAVORED NANOTECHNOLOGY CO., LTD.

Inventor： Jian ZONG ,  Siyue LI

IPC: C09D5/08 ,  C09D4/00 ,  C09D133/06 ,  C09D133/16 ,  C09D135/02 ,  C23C16/505 ,  C23C16/515

CPC classification number: C09D5/08 ,  C09D4/00 ,  C09D133/062 ,  C09D133/16 ,  C09D135/02 ,  C23C16/505 ,  C23C16/515

Abstract: Specific embodiments of the present disclosure provide a composite coating. In the composite coating, a plasma of a multifunctional-group monomer having an epoxy structure and a plasma of an ester-based coupling agent are used to form a coating as a base coating, and a plasma of an unsaturated ester-based monomer having aromatic ring(s) and a plasma of an ester-based coupling agent are used to form a coating as an anti-corrosion coating. The composite coating has a high binding force with a substrate and a strong corrosion resistance.

公开(公告)号：US20190157078A1

公开(公告)日：2019-05-23

申请号：US16179809

申请日：2018-11-02

Applicant: Lam Research Corporation

Inventor： Bart J. van Schravendijk ,  Akhil Singhal ,  Joseph Hung-chi Wei ,  Bhadri N. Varadarajan ,  Kevin McLaughlin ,  Casey Holder ,  Ananda Banerji

IPC: H01L21/02 ,  H01L23/29 ,  H01J37/32 ,  C23C16/56 ,  C23C16/515 ,  C23C16/34 ,  C23C16/50 ,  H01L21/56 ,  H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  C23C16/32

CPC classification number: H01L21/02274 ,  C23C16/325 ,  C23C16/345 ,  C23C16/50 ,  C23C16/515 ,  C23C16/56 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/56 ,  H01L23/291 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300° C. are provided herein. Methods involve pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300° C.

公开(公告)号：US10147610B1

公开(公告)日：2018-12-04

申请号：US15608135

申请日：2017-05-30

Applicant: LAM RESEARCH CORPORATION

Inventor： Ramkishan Rao Lingampalli ,  Joel Hollingsworth ,  Bradley Baker

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/509 ,  C23C16/515 ,  C23C16/04

CPC classification number: H01L21/28556 ,  C23C16/045 ,  C23C16/45514 ,  C23C16/45538 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/515

Abstract: A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material, and a backside gas tube made of metallized ceramic material that is located in an interior of the stem. The metallized ceramic tube can be used to deliver backside gas to the substrate and supply RF power to an embedded electrode in the pedestal.

公开(公告)号：US20180261452A1

公开(公告)日：2018-09-13

申请号：US15915853

申请日：2018-03-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji OUCHI

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/04 ,  C23C16/30

CPC classification number: H01L21/02131 ,  C23C16/04 ,  C23C16/30 ,  C23C16/45523 ,  C23C16/509 ,  C23C16/513 ,  C23C16/515 ,  H01J37/3211 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32724 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/6833

Abstract: A film forming method for a target object including a main surface and grooves formed in the main surface, includes a step of supplying of a first gas into the processing chamber, and a step of supplying a second gas and a high frequency power for plasma generation into the processing chamber to generate in the processing chamber a plasma of a gas including the second gas in the processing chamber. The first gas contains an oxidizing agent that does not include a hydrogen atom. The second gas contains a compound that includes one or more silicon atoms and one or more fluorine atoms and does not include a hydrogen atom. A film containing silicon and oxygen is selectively formed on the main surface of the target object except the grooves.

公开(公告)号：US09994957B2

公开(公告)日：2018-06-12

申请号：US14778309

申请日：2014-05-30

Applicant: HONDA MOTOR CO., LTD.

Inventor： Koji Kobayashi ,  Junya Funatsu

IPC: H05H1/00 ,  C23C16/50 ,  C23C16/26 ,  C23C16/515 ,  C23C16/02 ,  C23C16/04 ,  H01J37/32 ,  C23C16/455

CPC classification number: C23C16/50 ,  C23C16/02 ,  C23C16/0227 ,  C23C16/045 ,  C23C16/26 ,  C23C16/455 ,  C23C16/515 ,  H01J37/32009

Abstract: Provided is a preliminary treatment method for a workpiece capable of shortening a cycle time by preventing a nodule from being formed on a carbon film. The preliminary treatment method for the workpiece is performed before a carbon film is formed on a surface of a workpiece W. A bias voltage is applied to the workpiece W disposed in a treatment space S maintained at a predetermined vacuum degree while an oxygen gas is supplied to the treatment space S before a material gas is supplied to the treatment space S, oxygen plasma is generated along the surface of the workpiece W, and oxygen, hydrogen, or water stuck to the surface of the workpiece W is removed.

公开(公告)号：US20180022761A1

公开(公告)日：2018-01-25

申请号：US15692544

申请日：2017-08-31

Applicant: L'Air Liquide, Société Anonyme pour I'Etude et l'Exploitation des Procédés Georges Claude

Inventor： Jean-Marc GIRARD ,  Peng ZHANG ,  Antonio SANCHEZ ,  Manish KHANDELWAL ,  Gennediy ITOV ,  Reno PESARESI

IPC: C07F7/02 ,  C01B21/087 ,  C23C16/515 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C01B21/088 ,  C23C16/30

CPC classification number: H01L21/0228 ,  C01B21/087 ,  C01B21/088 ,  C07F7/025 ,  C23C16/308 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45553 ,  C23C16/515 ,  H01L21/02164 ,  H01L21/02222

Abstract: Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH3)2N—SiH2—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

公开(公告)号：US20170323803A1

公开(公告)日：2017-11-09

申请号：US15279310

申请日：2016-09-28

Applicant: Lam Research Corporation

Inventor： Bart J. van Schravendijk ,  Akhil Singhal ,  Joseph Hung-chi Wei ,  Bhadri N. Varadarajan ,  Kevin M. McLaughlin ,  Casey Holder ,  Ananda K. Banerji

IPC: H01L21/56 ,  H01L43/02 ,  H01L21/02 ,  H01L23/29 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L21/02274 ,  C23C16/325 ,  C23C16/345 ,  C23C16/50 ,  C23C16/515 ,  C23C16/56 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/56 ,  H01L23/291 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300° C. are provided herein. Methods involve pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300° C.

公开(公告)号：US20170084448A1

公开(公告)日：2017-03-23

申请号：US15263869

申请日：2016-09-13

Applicant: Applied Materials, Inc.

Inventor： Soumendra Narayan BARMAN ,  Jian J. CHEN ,  Praket P. JHA ,  Bok Hoen KIM ,  Miguel S. FUNG

IPC: H01L21/02 ,  C23C16/452 ,  C23C16/34 ,  C23C16/505

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/452 ,  C23C16/505 ,  C23C16/5096 ,  C23C16/515 ,  H01L21/02205 ,  H01L21/02219 ,  H01L21/02274

Abstract: Embodiments described herein generally relate to methods for forming a conformal silicon nitride layer at low temperatures. The conformal silicon nitride layer may be formed by pulsing a radio frequency (RF) power into a processing chamber while a gas mixture including trisilylamine is flowing into the processing chamber. Pulsed RF power increases the ratio of neutral to ionic species and activated species of trisilylamine have low sticking coefficients and greater surface migration. As a result, conformality of the deposited silicon nitride layer is improved.