公开(公告)号：US20230366924A1

公开(公告)日：2023-11-16

申请号：US18318506

申请日：2023-05-16

Applicant: Analog Devices International Unlimited Company

Inventor： Edward John Coyne ,  Alan J. O'Donnell ,  Shaun Bradley ,  David Aherne ,  David Boland ,  Thomas G. O'Dwyer ,  Colm Patrick Heffernan ,  Kevin B. Manning ,  Mark Forde ,  David J. Clarke ,  Michael A. Looby

IPC: G01R31/28 ,  G01N27/04

CPC classification number: G01R31/2879 ,  G01R31/2874 ,  G01N27/041

Abstract: The disclosed technology generally relates to integrated circuit devices with wear out monitoring capability. An integrated circuit device includes a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, wherein the indication is associated with localized diffusion of a diffusant within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit.

公开(公告)号：US20210396788A1

公开(公告)日：2021-12-23

申请号：US17446945

申请日：2021-09-03

Applicant: Analog Devices International Unlimited Company

Inventor： David J. Clarke ,  Stephen Denis Heffernan ,  Nijun Wei ,  Alan J. O'Donnell ,  Patrick Martin McGuinness ,  Shaun Bradley ,  Edward John Coyne ,  David Aherne ,  David M. Boland

IPC: G01R19/165 ,  G01R31/00 ,  G01R31/28 ,  H02H9/04 ,  H01L27/02 ,  H01L23/60 ,  H01L23/62 ,  H01L23/525 ,  H02H9/00

Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes;