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公开(公告)号：US12188893B2
公开(公告)日：2025-01-07
申请号：US17585332
申请日：2022-01-26
Inventor： Alfonso Berduque , Helen Berney , William Allan Lane , Raymond J. Speer , Brendan Cawley , Donal McAuliffe , Patrick Martin McGuinness
IPC: G01N27/407 , G01N27/30
Abstract: An electrochemical sensor is provided which may be formed using micromachining techniques commonly used in the manufacture of integrated circuits. This is achieved by forming microcapillaries in a silicon substrate and forming an opening in an insulating layer to allow environmental gases to reach through to the top side of the substrate. A porous electrode is printed on the top side of the insulating layer such that the electrode is formed in the opening in the insulating layer. The sensor also comprises at least one additional electrode. The electrolyte is then formed on top of the electrodes. A cap is formed over the electrodes and electrolyte. This arrangement may easily be produced using micromachining techniques.
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公开(公告)号：US12140619B2
公开(公告)日：2024-11-12
申请号：US18188363
申请日：2023-03-22
Inventor： Alan J. O′Donnell , David Aherne , Javier Alejandro Salcedo , David J. Clarke , John A. Cleary , Patrick Martin McGuinness , Albert C. O′Grady
IPC: H02J7/00 , G01R31/00 , G08B21/18 , H02H1/00 , H02H9/04 , H01L27/02 , H02H3/04 , H02H3/20 , H02H9/00 , H05K1/02
Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.
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公开(公告)号：US20240405517A1
公开(公告)日：2024-12-05
申请号：US18679348
申请日：2024-05-30
Inventor： David J. Clarke , Alan J. O'Donnell , Shaun Bradley , Stephen Denis Heffernan , Patrick Martin McGuinness , Padraig L. Fitzgerald , Edward John Coyne , Michael P. Lynch , John Anthony Cleary , John Ross Wallrabenstein , Paul Joseph Maher , Andrew Christopher Linehan , Gavin Patrick Cosgrave , Michael James Twohig , Jan Kubik , Jochen Schmitt , David Aherne , Mary McSherry , Anne M. McMahon , Stanislav Jolondcovschi , Cillian Burke
Abstract: Apparatuses including spark gap structures for electrical overstress (EOS) monitoring or protection, and associated methods, are disclosed. In an aspect, a spark gap array includes a sheet resistor and an array of arcing electrode pairs formed over a substrate. The array of arcing electrode pairs includes first arcing electrodes formed on the sheet resistor and a second arcing electrode arranged as a sheet formed over the first arcing electrodes and separated from the first arcing electrodes by an arcing gap. The first arcing electrodes and second arcing electrode are electrically connected to first and second voltage nodes, respectively, and the arcing electrode pairs are configured to generate arc discharges in response to an EOS voltage signal received between the first and second voltage nodes.
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公开(公告)号：US20220146449A1
公开(公告)日：2022-05-12
申请号：US17585332
申请日：2022-01-26
Inventor： Alfonso Berduque , Helen Berney , William Allan Lane , Raymond J. Speer , Brendan Cawley , Donal McAuliffe , Patrick Martin McGuinness
IPC: G01N27/407 , G01N27/30
Abstract: An electrochemical sensor is provided which may be formed using micromachining techniques commonly used in the manufacture of integrated circuits. This is achieved by forming microcapillaries in a silicon substrate and forming an opening in an insulating layer to allow environmental gases to reach through to the top side of the substrate. A porous electrode is printed on the top side of the insulating layer such that the electrode is formed in the opening in the insulating layer. The sensor also comprises at least one additional electrode. The electrolyte is then formed on top of the electrodes. A cap is formed over the electrodes and electrolyte. This arrangement may easily be produced using micromachining techniques.
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公开(公告)号：US20210396788A1
公开(公告)日：2021-12-23
申请号：US17446945
申请日：2021-09-03
Inventor： David J. Clarke , Stephen Denis Heffernan , Nijun Wei , Alan J. O'Donnell , Patrick Martin McGuinness , Shaun Bradley , Edward John Coyne , David Aherne , David M. Boland
IPC: G01R19/165 , G01R31/00 , G01R31/28 , H02H9/04 , H01L27/02 , H01L23/60 , H01L23/62 , H01L23/525 , H02H9/00
Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes;
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Patent Agency Ranking
公开(公告)号：US20200252074A1
公开(公告)日：2020-08-06
申请号：US16858099
申请日：2020-04-24
Inventor： John P. Healy , Michael Hennessy , Naiqian Ren , Patrick Martin McGuinness , Robert A. Bombara
Abstract: This disclosure describes techniques to perform analog signal conditioning (including filtering and amplification) and analog-to-digital conversion (ADC) on a System-in-package (SIP) assembly technology. In particular, the disclosure combines a programmable gain amplifier (PGA), one or more filter circuits, and an ADC circuit onto the same SIP. These devices are coupled together on the SIP using high-accuracy and precise integrated-passive components. The SIP receives an analog signal, amplifies the analog signal with the PGA on the SIP, filters the amplified analog signal with the filter circuit(s) on the SIP, and then performs analog-to-digital conversion on the filtered amplified analog signal with the ADC circuit on the SIP. The SIP can be configured for various applications based on a variety of inputs and control mechanisms.
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公开(公告)号：US11668734B2
公开(公告)日：2023-06-06
申请号：US17446945
申请日：2021-09-03
Inventor： David J. Clarke , Stephen Denis Heffernan , Nijun Wei , Alan J. O'Donnell , Patrick Martin McGuinness , Shaun Bradley , Edward John Coyne , David Aherne , David M. Boland
IPC: G01R19/165 , G01R31/00 , G01R31/28 , H02H9/04 , H01L27/02 , H01L23/60 , H01L23/62 , H01L23/525 , H02H9/00
CPC classification number: G01R19/16504 , G01R31/002 , G01R31/2832 , G01R31/2856 , H01L23/5256 , H01L23/60 , H01L23/62 , H01L27/0288 , H02H9/00 , H02H9/042
Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes.
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公开(公告)号：US11644497B2
公开(公告)日：2023-05-09
申请号：US17456307
申请日：2021-11-23
Inventor： Alan J. O'Donnell , David Aherne , Javier Alejandro Salcedo , David J. Clarke , John A. Cleary , Patrick Martin McGuinness , Albert C. O'Grady
IPC: G01R31/00 , G08B21/18 , H02H1/00 , H02H9/04 , H02H3/20 , H05K1/02 , H02H9/00 , H01L27/02 , H02H3/04
CPC classification number: G01R31/002 , G08B21/185 , H02H1/0007 , H02H9/046 , H01L27/0251 , H02H3/04 , H02H3/20 , H02H9/005 , H02H9/04 , H02H9/042 , H05K1/0259
Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.
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公开(公告)号：US11268927B2
公开(公告)日：2022-03-08
申请号：US16329664
申请日：2017-08-29
Inventor： Alfonso Berduque , Helen Berney , William Allan Lane , Raymond J. Speer , Brendan Cawley , Donal McAuliffe , Patrick Martin McGuinness
IPC: G01N27/407 , G01N27/30
Abstract: An electrochemical sensor is provided which may be formed using micromachining techniques commonly used in the manufacture of integrated circuits. This is achieved by forming microcapillaries in a silicon substrate and forming an opening in an insulating layer to allow environmental gases to reach through to the top side of the substrate. A porous electrode is printed on the top side of the insulating layer such that the electrode is formed in the opening in the insulating layer. The sensor also comprises at least one additional electrode. The electrolyte is then formed on top of the electrodes. A cap is formed over the electrodes and electrolyte. This arrangement may easily be produced using micromachining techniques.
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公开(公告)号：US11112436B2
公开(公告)日：2021-09-07
申请号：US16360356
申请日：2019-03-21
Inventor： David J. Clarke , Stephen Denis Heffernan , Nijun Wei , Alan J. O'Donnell , Patrick Martin McGuinness , Shaun Bradley , Edward John Coyne , David Aherne , David M. Boland
IPC: G01R19/165 , G01R31/00 , G01R31/28 , H02H9/04 , H01L27/02 , H01L23/60 , H01L23/62 , H01L23/525 , H02H9/00
Abstract: The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes.
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