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    Magnetic field sensor with magnetoresistance elements and conductive-trace magnetic source
    21.
    发明授权
    Magnetic field sensor with magnetoresistance elements and conductive-trace magnetic source 有权
    具有磁阻元件和导电迹线磁源的磁场传感器

    公开(公告)号：US09322887B1

    公开(公告)日：2016-04-26

    申请号：US14556523

    申请日：2014-12-01

    Applicant: Allegro Microsystems, LLC

    Inventor： Jeffrey Eagen ,  Paul A. David

    IPC: G11B5/39 ,  G01R33/09 ,  G01R33/00 ,  G01D5/16

    CPC classification number: G01D5/16 ,  G01D5/147 ,  G01R15/205 ,  G01R33/0082 ,  G01R33/091 ,  G11B5/3958 ,  H01F1/055

    Abstract: In an embodiment, a magnetic field sensor comprises a substrate and a first magnetoresistive element supported by the substrate. The magnetic field sensor also includes a second magnetoresistive element supported by the substrate and coupled in series with the first magnetoresistive element to form a voltage node between the first and second magnetoresistive elements, and at which an output voltage is provided that changes in response to an external magnetic field. The magnetic field sensor also includes a magnetic source that produces a local magnetic field having a strength sufficient to bias the first magnetoresistive element to a resistive value that is substantially resistant to changing in response to the external magnetic field. In embodiments, additional magnetoresistive elements are included to form an H-bridge circuit.

    Abstract translation: 在一个实施例中，磁场传感器包括衬底和由衬底支撑的第一磁阻元件。 磁场传感器还包括由衬底支撑并与第一磁阻元件串联耦合的第二磁阻元件，以在第一和第二磁阻元件之间形成电压节点，并且提供输出电压，其响应于 外部磁场。 磁场传感器还包括产生具有足以将第一磁阻元件偏置到基本上抵抗外部磁场变化的电阻值的强度的局部磁场的磁源。 在实施例中，包括附加的磁阻元件以形成H桥电路。

    Magnetoresistance element with increased operational range
    23.
    发明授权
    Magnetoresistance element with increased operational range 有权

    公开(公告)号：US11022661B2

    公开(公告)日：2021-06-01

    申请号：US15991491

    申请日：2018-05-29

    Applicant: Allegro MicroSystems, LLC

    Inventor： Rémy Lassalle-Balier ,  Jeffrey Eagen ,  Paolo Campiglio

    IPC: G01R33/09 ,  H01L43/10 ,  H01L43/08 ,  H01F10/32 ,  G01R33/00 ,  B82Y25/00

    Abstract: A magnetoresistance (MR) element includes a first stack portion comprising a first plurality of layers including a first spacer layer having a first thickness and a first material selected to result in the first stack portion having a first sensitivity to the applied magnetic field. The MR element also has a second stack portion comprising a second plurality of layers, including a second spacer layer having a second thickness to result in the second stack portion having a second sensitivity to the applied magnetic field. The first thickness may be different than the second thickness resulting in the first sensitivity being different than the second sensitivity.

    Magnetoresistance Element Having Selected Characteristics To Achieve A Desired Linearity
    25.
    发明申请
    Magnetoresistance Element Having Selected Characteristics To Achieve A Desired Linearity 审中-公开

    公开(公告)号：US20190178954A1

    公开(公告)日：2019-06-13

    申请号：US15837511

    申请日：2017-12-11

    Applicant: Allegro MicroSystems, LLC

    Inventor： Rémy Lassalle-Balier ,  Jeffrey Eagen

    IPC: G01R33/09

    Abstract: A magnetoresistance element disposed upon a substrate can include a stack of layers. The stack of layers can include a first portion including a first bias layer structure for generating a first bias magnetic field with a first bias direction, and a first free layer structure disposed proximate to the first bias layer structure, wherein the first free layer structure is biased by the first bias magnetic field. The stack of layers can also include a second portion including a second bias layer structure for generating a second bias magnetic field with a second bias direction; and a second free layer structure disposed proximate to the second bias layer structure, wherein the second free layer structure is biased by the second bias magnetic field, and wherein the first bias direction and the second bias directions are opposite to each other.

    Magnetic Field Sensor Able To Identify An Error Condition
    26.
    发明申请
    Magnetic Field Sensor Able To Identify An Error Condition 审中-公开

    公开(公告)号：US20190162784A1

    公开(公告)日：2019-05-30

    申请号：US15825879

    申请日：2017-11-29

    Applicant: Allegro MicroSystems, LLC

    Inventor： Rémy Lassalle-Balier ,  Jeffrey Eagen ,  Paul A. David

    IPC: G01R31/319 ,  G01R33/09

    Abstract: A method of determining an error condition in a magnetic field sensor can include receiving a first bridge signal, the first bridge signal generated by a first full bridge circuit. The method can also include receiving a second bridge signal, the second bridge signal generated by a second full bridge circuit. The method can also include determining a bridge separation from the first bridge signal and the second bridge signal. The method can also include comparing a function of the bridge separation to a threshold value. The method can also include generating an error signal indicative of the error condition or not indicative of the error condition in response to the comparing.

    Arrangements for magnetic field sensors to cancel offset variations
    27.
    发明授权
    Arrangements for magnetic field sensors to cancel offset variations 有权

    公开(公告)号：US10260905B2

    公开(公告)日：2019-04-16

    申请号：US15176655

    申请日：2016-06-08

    Applicant: Allegro MicroSystems, LLC

    Inventor： Paul A. David ,  Eric G. Shoemaker ,  Jeffrey Eagen

    IPC: G01D5/14 ,  G01D5/16

    Abstract: A magnetic field sensor can sense a movement of an object along a path. A movement line is tangent to the path. The magnetic field sensor can include a semiconductor substrate. The semiconductor substrate can have first and second orthogonal axes orthogonal to each other on the first surface of the substrate. A projection of the movement line onto a surface of the semiconductor substrate is only substantially parallel to the first orthogonal axis. The magnetic field sensor can also include first, second, third, and fourth magnetic field sensing elements disposed on the substrate. The first and second magnetic field sensing elements have maximum response axes parallel to the first orthogonal axis and the second and fourth magnetic field sensing elements have maximum response axes parallel to the second orthogonal axis. Signals generated by the second and fourth magnetic field sensing elements can be used as reference signals.

    MAGNETIC FIELD SENSOR WITH IMPROVED RESPONSE IMMUNITY
    30.
    发明申请
    MAGNETIC FIELD SENSOR WITH IMPROVED RESPONSE IMMUNITY 审中-公开

    公开(公告)号：US20170254863A1

    公开(公告)日：2017-09-07

    申请号：US15061190

    申请日：2016-03-04

    Applicant: Allegro Microsystems, LLC

    Inventor： Jeffrey Eagen ,  William P. Taylor

    IPC: G01R33/09 ,  G01R15/20 ,  G01D5/16

    CPC classification number: G01R33/09 ,  G01D5/145 ,  G01D5/16 ,  G01D5/24438 ,  G01R15/205 ,  G01R33/093 ,  G01R33/098

    Abstract: A magnetic field sensor includes a plurality of magnetoresistance elements, each having at least one characteristic selected to provide a respective, different response to an applied magnetic field, wherein each of the plurality of magnetoresistance elements is coupled in parallel. Illustrative characteristics selected to provide the respective responses include dimensions and/or construction parameters such as materials, layer thickness and order, and spatial relationship of the magnetoresistance element to the applied magnetic field. A method includes providing each of a plurality of magnetoresistance elements with at least one characteristic selected to provide a respective, different response to an applied magnetic field, wherein each of the plurality of magnetoresistance elements is coupled in parallel.

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