公开(公告)号：US20190180985A1

公开(公告)日：2019-06-13

申请号：US16217978

申请日：2018-12-12

Applicant: Applied Materials, Inc.

Inventor： Tsutomu Tanaka ,  Dmitry A. Dzilno ,  Alexander V. Garachtchenko ,  Keiichi Tanaka

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/285 ,  H01L21/687 ,  C23C16/455 ,  C23C16/505

Abstract: Apparatus and methods of processing a substrate in a plasma enhanced spatial atomic layer deposition chamber. A substrate is moved through one or more plasma processing regions and one or more non-plasma processing regions while the plasma power is pulsed to prevent a voltage differential on the substrate from exceeding a breakdown voltage of the substrate or device being formed on the substrate.

公开(公告)号：US20170170009A1

公开(公告)日：2017-06-15

申请号：US15374438

申请日：2016-12-09

Applicant: Applied Materials, Inc.

Inventor： Keiichi Tanaka ,  Andrew Short ,  Mandyam Sriram ,  Srinivas Gandikota

IPC: H01L21/02 ,  C23C16/50 ,  H01L21/762 ,  C23C16/455

CPC classification number: H01L21/02164 ,  C23C16/045 ,  C23C16/45527 ,  C23C16/50 ,  C23C16/56 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/76224

Abstract: Methods for filling the gap of a semiconductor feature comprising exposure of a substrate surface to a precursor and reactant and an anneal environment to decrease the wet etch rate ratio of the deposited film and fill the gap.