DISPLAY SUBSTRATE AND MANUFACTURE METHOD THEREOF, DISPLAY PANEL

    公开(公告)号:US20190013362A1

    公开(公告)日:2019-01-10

    申请号:US15745008

    申请日:2017-06-30

    Abstract: A display substrate, a manufacture method thereof and a display panel are provided. The display substrate includes: a first substrate; a plurality of pixel units included in the first substrate, each of the pixel units at least including a first sub-pixel unit, a second sub-pixel unit and a third sub-pixel unit; a medium film laminated layer arranged on the first substrate, the medium film laminated layer at least covering the first sub-pixel unit and the second sub-pixel unit; the medium film laminated layer is configured to eliminate blue light in a first wavelength range passing the medium film laminated layer, the medium film laminated layer includes at least one first medium film layer and at least one second medium film layer which are laminated alternately, and a refractive index of the first medium film layer is greater than a refractive index of the second medium film layer.

    DISPLAY PANEL AND DISPLAY DEVICE
    27.
    发明申请
    DISPLAY PANEL AND DISPLAY DEVICE 有权
    显示面板和显示设备

    公开(公告)号:US20160036005A1

    公开(公告)日:2016-02-04

    申请号:US14429372

    申请日:2014-05-27

    Inventor: Yonglian QI Shi SHU

    Abstract: The present invention relates to the field of display technology, and particularly to a display panel and a display device comprising the display panel. The display panel comprises a substrate, which is divided into a plurality of sub-pixel areas, each of which comprises a thin film transistor and an organic light-emitting diode device provided above the thin film transistor, wherein, a pixel define layer and a conductive layer are provided above the thin film transistor and below the organic light-emitting diode device, the pixel define layer is used for defining a light-transmissive region and a non-light-transmissive region of the sub-pixel area, an upper surface of the conductive layer and an upper surface of the pixel define layer are in the same plane, and the conductive layer is electrically connected to a drain of the thin film transistor.

    Abstract translation: 本发明涉及显示技术领域,特别涉及一种显示面板和包括该显示面板的显示装置。 显示面板包括被分成多个子像素区域的衬底,每个子像素区域包括薄膜晶体管和设置在薄膜晶体管上方的有机发光二极管器件,其中,像素限定层和 导电层设置在薄膜晶体管的上方并且在有机发光二极管器件的下方,像素限定层用于限定子像素区域的透光区域和非透光区域,上表面 的导电层和像素限定层的上表面在同一平面中,并且导电层电连接到薄膜晶体管的漏极。

    METHOD FOR FABRICATING COA ARRAY SUBSTRATE, ARRAY SUBSTRATE AND DISPLAY DEVICE
    28.
    发明申请
    METHOD FOR FABRICATING COA ARRAY SUBSTRATE, ARRAY SUBSTRATE AND DISPLAY DEVICE 有权
    用于制造COA阵列基板,阵列基板和显示装置的方法

    公开(公告)号:US20150340415A1

    公开(公告)日:2015-11-26

    申请号:US14351639

    申请日:2013-06-19

    Abstract: A method for fabricating a COA array substrate, an array substrate and a display device are provided. The fabrication method comprises the following steps: forming a protection layer (12) on the TFT substrate (11); coating a photoresist layer (21) on the protection layer (12), the photoresist layer (12) functioning as a planarized layer (14), wherein the TFT substrate (11) comprises a substrate (111) and a TFT (112); forming a color filter receiving hole (32) in the photoresist layer (21) through a photolithography process; fabricating the color filter layer (31) in the color filter receiving hole (32). The above fabrication method can reduce the complexity and cost of conventional method for fabricating the array substrate.

    Abstract translation: 提供了制造COA阵列基板,阵列基板和显示装置的方法。 该制造方法包括以下步骤:在TFT基板(11)上形成保护层(12); 在所述保护层(12)上涂覆光致抗蚀剂层(21),所述光致抗蚀剂层(12)用作平坦化层(14),其中所述TFT基板(11)包括基板(111)和TFT(112); 通过光刻工艺在光致抗蚀剂层(21)中形成滤色器接收孔(32); 在滤色器容纳孔(32)中制造滤色器层(31)。 上述制造方法可以降低用于制造阵列基板的常规方法的复杂性和成本。

    METHODS OF MANUFACTURING THIN FILM TRANSISTOR, BIOMETRIC DEVICE, AND DISPLAY APPARATUS

    公开(公告)号:US20220037198A1

    公开(公告)日:2022-02-03

    申请号:US17278855

    申请日:2020-07-24

    Abstract: A method of manufacturing thin film transistor(s) includes: providing a monocrystalline silicon wafer, the monocrystalline silicon wafer including a first surface and a second surface that are opposite to each other; forming a bubble layer between the first surface and the second surface of the monocrystalline silicon wafer, the bubble layer dividing the monocrystalline silicon wafer into two portions arranged side by side in a direction perpendicular to the second surface, and a portion of the monocrystalline silicon wafer that is located between the bubble layer and the second surface being a monocrystalline silicon film having a target thickness; providing a substrate, and transferring the monocrystalline silicon film onto the substrate by breaking the monocrystalline silicon wafer at the bubble layer; and patterning the monocrystalline silicon film transferred to the substrate to form active layer(s) of the thin film transistor(s).

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