公开(公告)号：US11948792B2

公开(公告)日：2024-04-02

申请号：US17104723

申请日：2020-11-25

Applicant: CORNING INCORPORATED

Inventor： Ya-Huei Chang ,  Karl William Koch, III ,  Jen-Chieh Lin ,  Jian-Zhi Jay Zhang

IPC: H01L21/02 ,  H01L29/16

CPC classification number: H01L21/02422 ,  H01L29/1604

Abstract: Embodiments of a glass wafer for semiconductor fabrication processes are described herein. In some embodiments, a glass wafer includes: a glass substrate comprising: a top surface, a bottom surface opposing the top surface, and an edge surface between the top surface and the bottom surface; a first coating disposed atop the glass substrate, wherein the first coating is a doped crystalline silicon coating having a sheet-resistance of 100 to 1,000,000 ohm per square; and a second coating having one or more layers disposed atop the glass substrate, wherein the second coating comprises a silicon containing coating, wherein the glass wafer has an average transmittance (T) of less than 50% over an entire wavelength range of 400 nm to 1000 nm.

公开(公告)号：US11282994B2

公开(公告)日：2022-03-22

申请号：US16756692

申请日：2018-10-16

Applicant: CORNING INCORPORATED

Inventor： Jiangwei Feng ,  Sean Matthew Garner ,  Jen-Chieh Lin ,  Robert George Manley ,  Timothy James Orsley ,  Richard Curwood Peterson ,  Michael Lesley Sorensen ,  Pei-Lien Tseng ,  Rajesh Vaddi ,  Lu Zhang

IPC: H01L33/62 ,  H01L27/15

Abstract: Display tiles comprising pixel elements on a first surface of a substrate connected by an electrode, a driver located opposite the first surface, and a connector wrapped around an edge surface of the substrate connecting the driver to the pixel elements. Displays comprised of display tiles and methods of manufacturing display tiles and displays are also disclosed.

公开(公告)号：US10015879B2

公开(公告)日：2018-07-03

申请号：US15416663

申请日：2017-01-26

Applicant: Corning Incorporated

Inventor： Daniel Warren Hawtof ,  Archit Lal ,  Jen-Chieh Lin ,  Gary Richard Trott

IPC: H05K1/02 ,  H01Q9/04 ,  H01Q1/12 ,  H05K1/03 ,  H05K1/11

CPC classification number: H05K1/024 ,  H01Q1/12 ,  H01Q1/38 ,  H01Q9/04 ,  H01Q9/285 ,  H05K1/0271 ,  H05K1/028 ,  H05K1/0306 ,  H05K1/115 ,  H05K3/381 ,  H05K2201/068 ,  H05K2201/10098

Abstract: A high silica content substrate, such as for a device, is provided. The substrate has a high silica content and is thin. The substrate may include a surface with a topography or profile that facilitates bonding with a conductive metal layer, such as a metal layer for a circuit or antenna. The substrate may be flexible, have high temperature resistance, very low CTE, high strength and/or be non-reactive. The substrate may be suitable for use in circuits intended for use in high temperature environments, low temperature environments, reactive environments, or other harsh environments. The substrate may be suitable for high frequency antenna applications.