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公开(公告)号：US12058933B2
公开(公告)日：2024-08-06
申请号：US18206898
申请日：2023-06-07
CPC分类号： H10K85/6572 , H10K71/12 , H10K71/231 , H10K85/654 , H10K85/655 , H10K85/6574 , H10K85/6576
摘要： Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.
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公开(公告)号：US20230103045A1
公开(公告)日：2023-03-30
申请号：US17787014
申请日：2021-01-05
申请人： Corning Incorporated
发明人： Gabriel Pierce Agnello , Joy Banerjee , Aize Li , Robert George Manley , Huan-Hung Sheng , Siva Venkatachalam
摘要： Apparatus and method for treating a substrate, for example texturing a substrate. In some embodiments, a masking material is applied to a surface of the substrate in a predetermined pattern, the surface thereafter contacted with an etchant that removes the masking material. Contacting the surface with the etchant produces multiple co-located textures. In other embodiments, the masking step can be eliminated, and the etchant is applied in a predetermined pattern to produce multiple co-located textures. In still other embodiments, the substrate has a chemical composition, and the substrate is exposed to a leachant that leaches at least one constituent of the chemical composition to produce a substrate with a varying chemical composition at the substrate surface.
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公开(公告)号：US11437587B2
公开(公告)日：2022-09-06
申请号：US16695371
申请日：2019-11-26
摘要： Described herein are electronics that incorporate heterocyclic organic compounds. More specifically, described herein are organic electronics systems that are combined with donor-acceptor organic semiconductors, along with methods for making such devices, and uses thereof.
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公开(公告)号：US11158504B2
公开(公告)日：2021-10-26
申请号：US16635056
申请日：2018-07-30
申请人： Corning Incorporated
IPC分类号： H01L21/02
摘要： A method of making polycrystalline silicon (p-Si), including: depositing amorphous silicon to produce an amorphous silicon super-mesa; dehydrogenating the amorphous silicon; patterning the super-mesa to produce a patterned substrate; depositing a capping oxide layer on the amorphous silicon on the patterned substrate; heating the capped, patterned substrate to the crystallization temperature of the a-Si; and flash lamp annealing the patterned substrate with a xenon lamp to produce p-Si having at least one super-mesa, and the super-mesa having supersized grains. Also disclosed are p-Si articles and devices incorporating the articles, and an apparatus for making the p-Si articles.
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公开(公告)号：US20170222025A1
公开(公告)日：2017-08-03
申请号：US15502535
申请日：2015-08-07
申请人： Corning Incorporated
CPC分类号： H01L27/0251 , C03C17/28 , C03C17/30 , C03C2218/111 , C03C2218/365 , H01L21/02118 , H01L23/60 , H01L27/0248 , H01L27/1218
摘要： Glass substrates comprising an A-side upon which silicon thin film transistor devices can be fabricated and a B-side having a substantially homogeneous organic film thereon are described. The organic film includes a moiety that reduces voltage generation by contact electrification or triboelectrification. Methods of manufacturing the glass substrates and example devices incorporating the glass substrates are also described.
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公开(公告)号：US20170207403A1
公开(公告)日：2017-07-20
申请号：US15404714
申请日：2017-01-12
申请人： Corning Incorporated
IPC分类号： H01L51/05 , H01L29/49 , H03K17/041 , H01L29/16
CPC分类号： H01L51/052 , H01L29/1606 , H01L29/4908 , H01L51/0036 , H01L51/004 , H01L51/0043 , H01L51/0047 , H01L51/0554 , H01L51/0558 , H03K17/04106
摘要： An organic thin film transistor comprising a first gate, a second gate, a semiconducting layer located between the first gate and second gate and configured to operate as a channel and a source electrode and a drain electrode connected to opposing sides of the semiconductor layer. The organic thin film transistor also comprises a first dielectric layer located between the first gate and the semiconducting layer in a direction of current flow through the semiconductor layer, the first dielectric layer comprising a polar elastomeric dielectric material that exhibits a double layer charging effect when a set voltage is applied to the first gate and a second dielectric layer located between the second gate and the semiconducting layer.
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公开(公告)号：US20170182744A1
公开(公告)日：2017-06-29
申请号：US15302098
申请日：2015-04-07
申请人： Corning Incorporated
CPC分类号： B32B17/06 , B32B3/266 , B32B7/06 , B32B7/12 , B32B9/005 , B32B9/04 , B32B17/00 , B32B27/06 , B32B38/0008 , B32B2250/02 , B32B2255/00 , B32B2307/308 , B32B2307/50 , B32B2307/546 , B32B2307/702 , B32B2307/732 , B32B2307/748 , B32B2307/75 , B32B2309/02 , B32B2309/04 , B32B2309/105 , B32B2315/08 , B32B2457/00 , C03C15/00 , H01L21/02043 , H01L21/02079
摘要： A method of making a device substrate article having a device modified substrate supported on a glass carrier substrate, including: treating at least a portion of the first surface of a device substrate, at least a portion of a first surface of a glass carrier, or a combination thereof, wherein the treating produces a surface having: silicon; oxygen; carbon; and fluorine amounts; and a metal to fluorine ratio as defined herein; contacting the treated surface with an untreated or like-treated counterpart device substrate or glass carrier substrate to form a laminate comprised of the device substrate bonded to the glass carrier substrate; modifying at least a portion of the non-bonded second surface of the device substrate of the laminate with at least one device surface modification treatment; and separating the device substrate having the device modified second surface from the glass carrier substrate.
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公开(公告)号：US20150329415A1
公开(公告)日：2015-11-19
申请号：US14651728
申请日：2013-12-13
申请人： Robert Alan BELLMAN , Dana Craig BOOKBINDER , Robert George MANLEY , Prantik MAZUMDER , CORNING INCORPORATED
CPC分类号： C03C17/30 , B32B7/06 , B32B7/12 , B32B17/06 , B32B37/18 , B32B2255/26 , B32B2307/538 , B32B2307/546 , B32B2315/08 , B32B2551/00 , C03C17/32 , C03C27/10 , C03C2218/328 , Y10T428/24355 , Y10T428/269 , Y10T428/31544 , Y10T428/31612
摘要： Surface modification layers (30) and associated heat treatments, that may be provided on a sheet (20), a carrier (10), or both, to control both room-temperature van der Waals (and/or hydrogen) bonding and high temperature covalent bonding between the thin sheet and carrier. The room-temperature bonding is controlled so as to be sufficient to hold the thin sheet and carrier together during vacuum processing, wet processing, and/or ultrasonic cleaning processing, for example. And at the same time, the high temperature covalent bonding is controlled so as to prevent a permanent bond between the thin sheet and carrier during high temperature processing, as well as maintain a sufficient bond to prevent delamination during high temperature processing.
摘要翻译： 可以提供在片材（20），载体（10）或两者上的表面改性层（30）和相关的热处理以控制室温范德华力（和/或氢）键合和高温 在薄片和载体之间共价键合。 例如，在真空处理，湿法处理和/或超声波清洗处理中，室温粘合被控制为足以将薄片和载体保持在一起。 同时控制高温共价键，以防止在高温加工过程中薄片和载体之间的永久性结合，并且保持足够的粘结以防止在高温加工过程中的分层。
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9.发明申请METAL-FREE CVD COATING OF GRAPHENE ON GLASS AND OTHER DIELECTRIC SUBSTRATES 有权玻璃和其他介电基板上的金属无金属CVD涂层公开(公告)号：US20150232343A1
公开(公告)日：2015-08-20
申请号：US14182819
申请日：2014-02-18
申请人： CORNING INCORPORATED
IPC分类号： C01B31/04
CPC分类号： C23C16/26 , C01B32/182 , C01B32/186 , C03C17/22 , C03C2217/28 , C03C2218/152 , C04B41/85 , C23C16/0227 , C23C16/44 , Y10T428/24975 , Y10T428/25 , Y10T428/265 , Y10T428/30
摘要： A catalyst-free CVD method for forming graphene. The method involves placing a substrate within a reaction chamber, heating the substrate to a temperature between 600° C. and 1100° C., and introducing a carbon precursor into the chamber to form a graphene layer on a surface of the substrate. The method does not use plasma or a metal catalyst to form the graphene.
摘要翻译： 一种用于形成石墨烯的无催化剂CVD方法。 该方法包括将衬底放置在反应室内，将衬底加热至600℃至1100℃之间的温度，并将碳前体引入室中以在衬底的表面上形成石墨烯层。 该方法不使用等离子体或金属催化剂来形成石墨烯。
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公开(公告)号：US11905201B2
公开(公告)日：2024-02-20
申请号：US15739321
申请日：2016-06-22
申请人： CORNING INCORPORATED
CPC分类号： C03C15/02 , B32B17/10036 , B32B17/10128 , B32B17/10577 , C03C17/32 , C03C27/10 , B32B2315/08 , B32B2457/20 , C03C2218/153 , C03C2218/32 , C03C2218/355
摘要： An article includes a carrier including a carrier bonding surface, a sheet including a sheet bonding surface, and a surface modification layer disposed on at least one of the carrier bonding surface and the sheet bonding surface. The surface modification layer includes a plasma polymerized material. The plasma polymerized material planarizes the at least one of the carrier bonding surface and the sheet bonding surface. The carrier bonding surface and the sheet bonding surface are bonded with the surface modification layer so that the carrier is temporarily bonded with the sheet. A method of making an article includes depositing a surface modification layer on at least one of a carrier bonding surface and a sheet bonding surface. The method further includes bonding the carrier bonding surface and the sheet bonding surface with the surface modification layer to temporarily bond the carrier with the sheet.
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