公开(公告)号：US5314848A

公开(公告)日：1994-05-24

申请号：US764846

申请日：1991-09-24

申请人： Takatoshi Yasui ,  Chiaki Kudo ,  Ichiro Nakao ,  Toyokazu Fujii ,  Yuka Terai ,  Shinichi Imai ,  Hiroshi Yamamoto ,  Yasushi Naito

发明人： Takatoshi Yasui ,  Chiaki Kudo ,  Ichiro Nakao ,  Toyokazu Fujii ,  Yuka Terai ,  Shinichi Imai ,  Hiroshi Yamamoto ,  Yasushi Naito

IPC分类号： H01L21/3105 ,  H01L21/768 ,  H01L21/00 ,  H01L21/02 ,  H01L21/324 ,  H01L21/477

CPC分类号： H01L21/76819 ,  H01L21/3105 ,  Y10S148/133 ,  Y10S438/909

摘要： Described is a method for manufacturing semiconductor devices which includes a heat treating process for heating and cooling semiconductor substrates mounted on a boat at a predetermined pitch according to a predetermined temperature profile, in order to flatten the surface of each semiconductor substrate by reflowing an insulating film containing impurities, for example, a BPSG film formed on the substrate. In the heat treating process, one of the control factors which affects the formation of grains or particles due to the impurities contained in the insulating film is set so as to prevent the impurities from generating grains or particles during the heat treatment. Also disclosed is a method of preventing the generation of grains or particles by widening the pitch of the mounted substrates.

摘要翻译： 描述了一种用于制造半导体器件的方法，其包括根据预定温度分布以预定间距对安装在船上的半导体衬底进行加热和冷却的热处理工艺，以便通过回流绝缘膜来平坦化每个半导体衬底的表面 含有杂质，例如在基板上形成的BPSG膜。 在热处理过程中，设定影响绝缘膜中含有杂质的晶粒或颗粒形成的控制因素之一，以防止杂质在热处理过程中产生晶粒或颗粒。 还公开了通过扩大安装的基板的间距来防止颗粒或颗粒的产生的方法。