公开(公告)号：US5422522A

公开(公告)日：1995-06-06

申请号：US932755

申请日：1992-08-20

Applicant: Craig J. Rotay

Inventor： Craig J. Rotay

IPC: G05F3/22 ,  H03F1/30 ,  H03K3/42 ,  G05F1/10 ,  H03F3/04 ,  H03K17/60

CPC classification number: H03F1/302 ,  G05F3/225

Abstract: A biasing device which is in thermal contact with an RF device for actively biasing the RF device operating in quasi-linear modes. The biasing device provides a low impedance current source with high current capability to the base of the RF device. The biasing device includes three specially-processed transistors. The second and third transistors are connected such that their base-emitter and base-collector junctions are in parallel effectively forming two exceptionally low turn on series diodes. The result of reducing the resistances of the second and third transistors, by configuration and processing, is that they turn on slightly before the RF device is biased to its quiescent point.

Abstract translation: 与RF装置热接触的偏置装置，用于以准线性模式主动偏置RF装置。 偏置器件为RF器件的基极提供具有高电流能力的低阻抗电流源。 偏置装置包括三个专门处理的晶体管。 第二和第三晶体管被连接成使得其基极 - 发射极和基极 - 集电极结并联有效地形成两个非常低的串联二极管。 通过配置和处理来降低第二和第三晶体管的电阻的结果是它们在RF器件被偏置到其静态点之前略微接通。