Transferable Micro Spring Structure
    21.
    发明申请
    Transferable Micro Spring Structure 有权
    可转移微弹簧结构

    公开(公告)号:US20080268669A1

    公开(公告)日:2008-10-30

    申请号:US12167972

    申请日:2008-07-03

    IPC分类号: H01R12/00

    摘要: A method for mounting the micro spring structures onto cables or contact structures includes forming a spring island having an “upside-down” stress bias on a first release material layer or directly on a substrate, forming a second release material over at least a portion of the spring island, and then forming a base structure over the second release material layer. The micro spring structure is then transferred in an unreleased state, inverted such that the base structure contacts a surface of a selected apparatus, and then secured (e.g., using solder reflow techniques) such that the micro spring structure becomes attached to the apparatus. The spring structure is then released by etching or otherwise removing the release material layer(s).

    摘要翻译: 用于将微弹簧结构安装到电缆或接触结构上的方法包括在第一释放材料层上或直接在基底上形成具有“倒置”应力偏压的弹簧岛,在至少一部分上形成第二释放材料 弹簧岛,然后在第二释放材料层上形成基部结构。 然后将微型弹簧结构转移到未释放状态,以使得底部结构接触所选择的装置的表面,然后固定(例如,使用回流焊技术),使得微弹簧结构附接到该装置。 然后通过蚀刻或以其它方式去除释放材料层来释放弹簧结构。

    Transferable micro spring structure
    22.
    发明授权
    Transferable micro spring structure 失效
    可转移微弹簧结构

    公开(公告)号:US07410590B2

    公开(公告)日:2008-08-12

    申请号:US10741461

    申请日:2003-12-19

    IPC分类号: C23F1/00 H01L21/00

    摘要: A method for mounting the micro spring structures onto cables or contact structures includes forming a spring island having an “upside-down” stress bias on a first release material layer or directly on a substrate, forming a second release material over at least a portion of the spring island, and then forming a base structure over the second release material layer. The micro spring structure is then transferred in an unreleased state, inverted such that the base structure contacts a surface of a selected apparatus, and then secured (e.g., using solder reflow techniques) such that the micro spring structure becomes attached to the apparatus. The spring structure is then released by etching or otherwise removing the release material layer(s).

    摘要翻译: 用于将微弹簧结构安装到电缆或接触结构上的方法包括在第一释放材料层上或直接在基底上形成具有“倒置”应力偏压的弹簧岛,在至少一部分上形成第二释放材料 弹簧岛,然后在第二释放材料层上形成基部结构。 然后将微型弹簧结构转移到未释放状态,以使得底部结构接触所选择的装置的表面,然后固定(例如,使用回流焊技术),使得微弹簧结构附接到该装置。 然后通过蚀刻或以其它方式去除释放材料层来释放弹簧结构。

    Large-area imager with direct digital pixel output
    23.
    发明授权
    Large-area imager with direct digital pixel output 有权
    大面积成像器具有直接数字像素输出

    公开(公告)号:US07139024B2

    公开(公告)日:2006-11-21

    申请号:US10206743

    申请日:2002-07-26

    IPC分类号: H04N3/14

    摘要: An imager circuit includes an array of pixels, each pixel including a sensor (photodiode) connected to an input terminal of a comparator. The comparators of each pixel row have output terminals connected to a latch. A counter generates a sequence of digital values that are transmitted to a digital-to-analog converter (DAC) and to the latch of each row. The DAC generates a ramp voltage that is transmitted to a second input terminal of each pixel's comparator. The comparators of a selected pixel column are enabled to generate output signals when the ramp voltage equals each pixel's voltage, causing the associated latches to capture the current digital values. The comparators are formed such that each pixel row shares a cascode mirror circuit that detects differential currents in data line pairs connected to each pixel in that row.

    摘要翻译: 成像器电路包括像素阵列,每个像素包括连接到比较器的输入端的传感器(光电二极管)。 每个像素行的比较器具有连接到锁存器的输出端子。 计数器产生被发送到数模转换器(DAC)和每行的锁存器的数字值序列。 DAC产生斜波电压,该斜坡电压被传输到每个像素的比较器的第二输入端。 当斜坡电压等于每个像素的电压时,所选像素列的比较器被使能以产生输出信号,导致相关联的锁存器捕获当前的数字值。 比较器形成为使得每个像素行共享一个共源共栅反射镜电路,其检测连接到该行中的每个像素的数据线对中的差分电流。

    Photolithographically-patterned variable capacitor structures and method of making
    24.
    发明授权
    Photolithographically-patterned variable capacitor structures and method of making 失效
    光刻图案可变电容器结构及其制造方法

    公开(公告)号:US06922327B2

    公开(公告)日:2005-07-26

    申请号:US09975358

    申请日:2001-10-11

    CPC分类号: H01G5/16 H01G5/18

    摘要: A new type of high-Q variable capacitor includes a substrate, a first electrically conductive layer fixed to the substrate, a dielectric layer fixed to a portion of the electrically conductive layer, and a second electrically conductive layer having an anchor portion and a free portion. The anchor portion is fixed to the dielectric layer and the free portion is initially fixed to the dielectric layer, but is released from the dielectric layer to become separated from the dielectric layer, and wherein an inherent stress profile in the second electrically conductive layer biases the free portion away from the dielectric layer. When a bias voltage is applied between the first electrically conductive layer and the second electrically conductive layer, electrostatic forces in the free portion bend the free portion towards the first electrically conductive layer, thereby increasing the capacitance of the capacitor.

    摘要翻译: 一种新型的高Q可变电容器包括:衬底,固定到衬底的第一导电层,固定到导电层的一部分的电介质层;以及第二导电层,具有锚固部分和自由部分 。 锚固部分​​固定在电介质层上,自由部分最初固定在电介质层上,但是从电介质层释放出来,与电介质层分离,其中第二导电层中的固有应力分布使 远离电介质层的自由部分。 当在第一导电层和第二导电层之间施加偏置电压时,自由部分中的静电力将自由部分弯曲朝向第一导电层,从而增加电容器的电容。

    Photolithographically-patterned variable capacitor structures and method of making
    26.
    发明授权
    Photolithographically-patterned variable capacitor structures and method of making 有权
    光刻图案可变电容器结构及其制造方法

    公开(公告)号:US06396677B1

    公开(公告)日:2002-05-28

    申请号:US09573363

    申请日:2000-05-17

    IPC分类号: H01G501

    CPC分类号: H01G5/16 H01G5/18

    摘要: A new type of high-Q variable capacitor includes a substrate, a first electrically conductive layer fixed to the substrate, a dielectric layer fixed to a portion of the electrically conductive layer, and a second electrically conductive layer having an anchor portion and a free portion. The anchor portion is fixed to the dielectric layer and the free portion is initially fixed to the dielectric layer, but is released from the dielectric layer to become separated from the dielectric layer, and wherein an inherent stress profile in the second electrically conductive layer biases the free portion away from the dielectric layer. When a bias voltage is applied between the first electrically conductive layer and the second electrically conductive layer, electrostatic forces in the free portion bend the free portion towards the first electrically conductive layer, thereby increasing the capacitance of the capacitor.

    摘要翻译: 一种新型的高Q可变电容器包括:衬底,固定到衬底的第一导电层,固定到导电层的一部分的电介质层;以及第二导电层,具有锚固部分和自由部分 。 锚固部分​​固定在电介质层上,自由部分最初固定在电介质层上,但是从电介质层释放出来,与电介质层分离,其中第二导电层中的固有应力分布使 远离电介质层的自由部分。 当在第一导电层和第二导电层之间施加偏置电压时,自由部分中的静电力将自由部分弯曲朝向第一导电层,从而增加电容器的电容。