公开(公告)号：US20120161324A1

公开(公告)日：2012-06-28

申请号：US13208835

申请日：2011-08-12

申请人： Jens Heinrich ,  Kai Frohberg ,  Katrin Reiche

发明人： Jens Heinrich ,  Kai Frohberg ,  Katrin Reiche

IPC分类号： H01L23/482 ,  H01L21/26

CPC分类号： H01L21/28518 ,  H01L21/76844 ,  H01L21/76855 ,  H01L23/53266 ,  H01L29/665 ,  H01L29/66575 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： When forming a metal silicide within contact openings in complex semiconductor devices, a silicidation of sidewall surface areas of the contact openings may be initiated by forming a silicon layer therein, thereby reducing unwanted diffusion of the refractory metal species into the laterally adjacent dielectric material. In this manner, superior reliability and electrical performance of the resulting contact elements may be achieved on the basis of a late silicide process.

摘要翻译： 当在复合半导体器件的接触开口内形成金属硅化物时，可以通过在其中形成硅层来引发接触开口的侧壁表面区域的硅化，从而减少难熔金属物质进入横向相邻电介质材料的不想要的扩散。 以这种方式，可以基于后期硅化物工艺实现所得到的接触元件的优异的可靠性和电性能。

公开(公告)号：US20100078823A1

公开(公告)日：2010-04-01

申请号：US12537321

申请日：2009-08-07

申请人： Sven Beyer ,  Kai Frohberg ,  Katrin Reiche ,  Kerstin Ruttloff

发明人： Sven Beyer ,  Kai Frohberg ,  Katrin Reiche ,  Kerstin Ruttloff

IPC分类号： H01L23/522 ,  H01L21/306

CPC分类号： H01L21/31144 ,  H01L21/76816 ,  H01L21/76897

摘要： A contact element may be formed on the basis of a hard mask, which may be patterned on the basis of a first resist mask and on the basis of a second resist mask, to define an appropriate intersection area which may represent the final design dimensions of the contact element. Consequently, each of the resist masks may be formed on the basis of a photolithography process with less restrictive constraints, since at least one of the lateral dimensions may be selected as a non-critical dimension in each of the two resist masks.

摘要翻译： 可以基于硬掩模形成接触元件，硬掩模可以基于第一抗蚀剂掩模并且基于第二抗蚀剂掩模来图案化，以限定适当的交叉区域，其可以表示最终的设计尺寸 接触元件。 因此，可以基于具有较少限制性约束的光刻工艺来形成每个抗蚀剂掩模，因为在两个抗蚀剂掩模中的每一个中可以选择至少一个横向尺寸作为非临界尺寸。

公开(公告)号：US20090294868A1

公开(公告)日：2009-12-03

申请号：US12424095

申请日：2009-04-15

申请人： Uwe Griebenow ,  Kai Frohberg ,  Kerstin Ruttloff ,  Katrin Reiche

发明人： Uwe Griebenow ,  Kai Frohberg ,  Kerstin Ruttloff ,  Katrin Reiche

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L21/823412 ,  H01L21/823425 ,  H01L21/823807 ,  H01L29/7843

摘要： The drive current capability of a pull-down transistor and a pass transistor formed in a common active region may be adjusted on the basis of a strain-inducing mechanism, such as a stressed dielectric material and a stress memorization technique, thereby providing a simplified overall geometric configuration of the active region. Hence, static RAM cells may be formed on the basis of a minimum channel length with a simplified configuration of the active region, thereby avoiding significant yield losses as may be observed in sophisticated devices in which a pronounced variation of the transistor width may be used to adjust the ratio of the drive current capabilities for the pull-down transistor and the pass transistor.

摘要翻译： 形成在公共有源区域中的下拉晶体管和传输晶体管的驱动电流能力可以基于诸如应力介电材料和应力记忆技术之类的应变诱导机构来调节，从而提供简化的总体 活动区域的几何配置。 因此，可以基于具有有源区域的简化配置的最小沟道长度形成静态RAM单元，从而避免了在可以使用晶体管宽度的显着变化的复杂器件中可观察到的显着的产量损失 调整下拉晶体管和传输晶体管的驱动电流能力的比值。

公开(公告)号：US08536050B2

公开(公告)日：2013-09-17

申请号：US13102411

申请日：2011-05-06

申请人： Kai Frohberg ,  Ralf Richter ,  Torsten Huisinga ,  Katrin Reiche

发明人： Kai Frohberg ,  Ralf Richter ,  Torsten Huisinga ,  Katrin Reiche

IPC分类号： H01L21/4763

CPC分类号： H01L23/485 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/76897 ,  H01L21/823425 ,  H01L21/823475 ,  H01L2924/0002 ,  H01L2924/00

摘要： In sophisticated semiconductor devices, the contact elements connecting to active semiconductor regions having formed thereabove closely spaced gate electrode structures may be provided on the basis of a liner material so as to reduce the lateral width of the contact opening, while, on the other hand, non-critical contact elements may be formed on the basis of non-reduced lateral dimensions. To this end, at least a first portion of the critical contact element is formed and provided with a liner material prior to forming the non-critical contact element.

摘要翻译： 在复杂的半导体器件中，可以基于衬垫材料提供连接到形成在其上方的紧密间隔的栅电极结构的有源半导体区域的接触元件，以便减小接触开口的横向宽度，而另一方面， 非临界接触元件可以基于非减小的横向尺寸形成。 为此，临界接触元件的至少第一部分形成并在形成非关键接触元件之前设置有衬垫材料。