公开(公告)号：US09588211B2

公开(公告)日：2017-03-07

申请号：US14658757

申请日：2015-03-16

Applicant: Everspin Technologies, Inc.

Inventor： Lianjun Liu ,  Phillip Mather

IPC: G01R33/02 ,  G01R35/00 ,  G01R33/00 ,  G01R33/09

CPC classification number: G01R35/00 ,  G01R33/0011 ,  G01R33/093

Abstract: A method and apparatus eliminate magnetic domain walls in a flux guide by applying, either simultaneously or sequentially, a current pulse along serially positioned reset lines to create a magnetic field along the flux guide, thereby removing the magnetic domain walls. By applying the current pulses in parallel and stepping through pairs of shorter reset lines segments via switches, less voltage is required.

Abstract translation: 一种方法和装置通过同时或顺序地施加沿着串行位置的复位线的电流脉冲来消除磁通引导件中的磁畴壁，以沿着磁通导向器产生磁场，从而去除磁畴壁。 通过并联施加电流脉冲并通过开关逐步穿过较短的复位线段，需要更少的电压。

公开(公告)号：US20150044782A1

公开(公告)日：2015-02-12

申请号：US14521213

申请日：2014-10-22

Applicant: Everspin Technologies, Inc.

Inventor： Phillip Mather ,  Jon Slaughter ,  Nicholas Rizzo

IPC: H01L43/12

CPC classification number: H01L43/02 ,  G01R33/098 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic sensor includes a plurality of groups, each group comprising a plurality of magnetic tunnel junction (MTJ) devices having a plurality of conductors configured to couple the MTJ devices within one group in parallel and the groups in series enabling independent optimization of the material resistance area (RA) of the MTJ and setting total device resistance so that the total bridge resistance is not so high that Johnson noise becomes a signal limiting concern, and yet not so low that CMOS elements may diminish the read signal. Alternatively, the magnetic tunnel junction devices within each of at least two groups in series and the at least two groups in parallel resulting in the individual configuration of the electrical connection path and the magnetic reference direction of the reference layer, leading to independent optimization of both functions, and more freedom in device design and layout. The X and Y pitch of the sense elements are arranged such that the line segment that stabilizes, for example, the right side of one sense element; also stabilizes the left side of the adjacent sense element.

Abstract translation: 磁传感器包括多个组，每个组包括多个磁隧道结（MTJ）装置，其具有多个导体，其被配置成并联连接一组内的MTJ装置，并且该组可串联实现材料电阻的独立优化 面积（RA），并设置总的器件电阻，使得总的桥接电阻不是很高，以至于Johnson噪声成为限制信号的关键，而不是那么低，使得CMOS元件可能会削弱读取信号。 或者，串联的至少两组中的每一个中的磁隧道结装置和并联的至少两个组，导致电连接路径的单独配置和参考层的磁参考方向，导致两者的独立优化 功能，以及更多设备设计和布局自由。 感测元件的X和Y间距被布置成使得例如稳定一个感测元件的右侧的线段; 也稳定了相邻感测元件的左侧。

公开(公告)号：US20130264666A1

公开(公告)日：2013-10-10

申请号：US13909622

申请日：2013-06-04

Applicant: Everspin Technologies, Inc.

Inventor： Jijun Sun ,  Phillip Mather ,  Srinivas Pietambaram ,  Jon Slaughter ,  Renu Whig ,  Nicholas Rizzo

IPC: H01L43/10 ,  H01L43/12

CPC classification number: H01L43/10 ,  G01R33/098 ,  H01L43/12 ,  Y10T29/49117

Abstract: A sensor and fabrication process are provided for forming reference layers with substantially orthogonal magnetization directions having zero offset with a small compensation angle. An exemplary embodiment includes a sensor layer stack of a magnetoresistive thin-film based magnetic field sensor, the sensor layer stack comprising a pinning layer; a pinned layer including a layer of amorphous material over the pinning layer, and a first layer of crystalline material over the layer of amorphous material; a nonmagnetic coupling layer over the pinned layer; a fixed layer over the nonmagnetic coupling layer; a tunnel barrier over the fixed layer; and a sense layer over the nonmagnetic intermediate layer. Another embodiment includes a sensor layer stack where a pinned layer including two crystalline layers separated by a amorphous layer.

Abstract translation: 提供传感器和制造工艺，用于形成具有基本上正交的磁化方向的参考层，具有零偏移并具有小的补偿角。 示例性实施例包括基于磁阻薄膜的磁场传感器的传感器层堆叠，传感器层堆叠包括钉扎层; 包括在钉扎层上的无定形材料层的钉扎层和在非晶材料层上的第一层结晶材料; 在被钉扎层上的非磁性耦合层; 在非磁耦合层上的固定层; 固定层上的隧道势垒; 以及在非磁性中间层上的感测层。 另一个实施例包括传感器层堆叠，其中包括由非晶层隔开的两个结晶层的钉扎层。