公开(公告)号：US07588977B2

公开(公告)日：2009-09-15

申请号：US11452066

申请日：2006-06-13

申请人： Sung-dae Suk ,  Sung-young Lee ,  Dong-won Kim ,  Sung-min Kim

发明人： Sung-dae Suk ,  Sung-young Lee ,  Dong-won Kim ,  Sung-min Kim

IPC分类号： H01L29/768

CPC分类号： H01L29/42392 ,  H01L29/0673 ,  H01L29/66484 ,  H01L29/7831

摘要： A method of fabricating a MOSFET provides a plurality of nanowire-shaped channels in a self-aligned manner. According to the method, a first material layer and a semiconductor layer are sequentially formed on a semiconductor substrate. A first mask layer pattern is formed on the semiconductor layer, and recess regions are formed using the first mask layer pattern as an etch mask. A first reduced mask layer pattern is formed, and a filling material layer is formed on the surface of the substrate. A pair of second mask layer patterns are formed, and a first opening is formed. Then, the filling material layer is etched to form a second opening, the exposed first material layer is removed to expose the semiconductor layer, and a gate insulation layer and a gate electrode layer enclosing the exposed semiconductor layer are formed.

摘要翻译： 制造MOSFET的方法以自对准方式提供多个纳米线状通道。 根据该方法，在半导体衬底上依次形成第一材料层和半导体层。 在半导体层上形成第一掩模层图案，并且使用第一掩模层图案作为蚀刻掩模形成凹陷区域。 形成第一缩小的掩模层图案，并且在基板的表面上形成填充材料层。 形成一对第二掩模层图案，形成第一开口。 然后，蚀刻填充材料层以形成第二开口，去除暴露的第一材料层以暴露半导体层，并且形成包围暴露的半导体层的栅极绝缘层和栅极电极层。

公开(公告)号：US20090294864A1

公开(公告)日：2009-12-03

申请号：US12538222

申请日：2009-08-10

申请人： Sung-dae Suk ,  Sung-young Lee ,  Dong-won Kim ,  Sung-min Kim

发明人： Sung-dae Suk ,  Sung-young Lee ,  Dong-won Kim ,  Sung-min Kim

IPC分类号： H01L29/78

CPC分类号： H01L29/42392 ,  H01L29/0673 ,  H01L29/66484 ,  H01L29/7831

摘要： A method of fabricating a MOSFET provides a plurality of nanowire-shaped channels in a self-aligned manner. According to the method, a first material layer and a semiconductor layer are sequentially formed on a semiconductor substrate. A first mask layer pattern is formed on the semiconductor layer, and recess regions are formed using the first mask layer pattern as an etch mask. A first reduced mask layer pattern is formed, and a filling material layer is formed on the surface of the substrate. A pair of second mask layer patterns are formed, and a first opening is formed. Then, the filling material layer is etched to form a second opening, the exposed first material layer is removed to expose the semiconductor layer, and a gate insulation layer and a gate electrode layer enclosing the exposed semiconductor layer are formed.

摘要翻译： 制造MOSFET的方法以自对准方式提供多个纳米线状通道。 根据该方法，在半导体衬底上依次形成第一材料层和半导体层。 在半导体层上形成第一掩模层图案，并且使用第一掩模层图案作为蚀刻掩模形成凹陷区域。 形成第一缩小的掩模层图案，并且在基板的表面上形成填充材料层。 形成一对第二掩模层图案，形成第一开口。 然后，蚀刻填充材料层以形成第二开口，去除暴露的第一材料层以暴露半导体层，并且形成包围暴露的半导体层的栅极绝缘层和栅极电极层。

公开(公告)号：US20070004124A1

公开(公告)日：2007-01-04

申请号：US11452066

申请日：2006-06-13

申请人： Sung-dae Suk ,  Sung-young Lee ,  Dong-won Kim ,  Sung-min Kim

发明人： Sung-dae Suk ,  Sung-young Lee ,  Dong-won Kim ,  Sung-min Kim

IPC分类号： H01L21/8244

CPC分类号： H01L29/42392 ,  H01L29/0673 ,  H01L29/66484 ,  H01L29/7831

摘要： A method of fabricating a MOSFET provides a plurality of nanowire-shaped channels in a self-aligned manner. According to the method, a first material layer and a semiconductor layer are sequentially formed on a semiconductor substrate. A first mask layer pattern is formed on the semiconductor layer, and recess regions are formed using the first mask layer pattern as an etch mask. A first reduced mask layer pattern is formed, and a filling material layer is formed on the surface of the substrate. A pair of second mask layer patterns are formed, and a first opening is formed. Then, the filling material layer is etched to form a second opening, the exposed first material layer is removed to expose the semiconductor layer, and a gate insulation layer and a gate electrode layer enclosing the exposed semiconductor layer are formed.

摘要翻译： 制造MOSFET的方法以自对准方式提供多个纳米线状通道。 根据该方法，在半导体衬底上依次形成第一材料层和半导体层。 在半导体层上形成第一掩模层图案，并且使用第一掩模层图案作为蚀刻掩模形成凹陷区域。 形成第一缩小的掩模层图案，并且在基板的表面上形成填充材料层。 形成一对第二掩模层图案，形成第一开口。 然后，蚀刻填充材料层以形成第二开口，去除暴露的第一材料层以暴露半导体层，并且形成包围暴露的半导体层的栅极绝缘层和栅极电极层。

公开(公告)号：US20080113474A1

公开(公告)日：2008-05-15

申请号：US11972131

申请日：2008-01-10

申请人： Sung-young Lee ,  Dong-suk Shin

发明人： Sung-young Lee ,  Dong-suk Shin

IPC分类号： H01L21/336

CPC分类号： H01L29/66651 ,  H01L29/0653 ,  H01L29/66553 ,  H01L29/66606 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78612 ,  H01L29/78654

摘要： Semiconductor-on-insulator (SOI) field effect transistors include a semiconductor substrate and a first semiconductor active region on a first portion of a surface of the substrate. A first electrically insulating layer is provided. This first electrically insulating layer extends on a second portion of the surface of the substrate and also on a first sidewall of the first semiconductor active region. A second electrically insulating layer is provided, which extends on a third portion of the surface of the semiconductor substrate. The second electrically insulating layer also extends on a second sidewall of the first semiconductor active region. A second semiconductor active region is provided on the first semiconductor active region. The second semiconductor active region extends on the first semiconductor active region and on ends of the first and second electrically insulating layers. Source and drain regions are also provided, which are electrically coupled to opposite ends of the second semiconductor active region. An insulated gate electrode extends on the second semiconductor active region and opposite the first semiconductor active region.

摘要翻译： 绝缘体上半导体（SOI）场效应晶体管包括在衬底表面的第一部分上的半导体衬底和第一半导体有源区。 提供第一电绝缘层。 该第一电绝缘层在衬底的表面的第二部分上以及在第一半导体有源区的第一侧壁上延伸。 提供了第二电绝缘层，其在半导体衬底的表面的第三部分上延伸。 第二电绝缘层也在第一半导体有源区的第二侧壁上延伸。 第二半导体有源区设置在第一半导体有源区上。 第二半导体有源区在第一半导体有源区和第一和第二电绝缘层的端部上延伸。 还提供了源极和漏极区域，其电耦合到第二半导体有源区域的相对端。 绝缘栅电极在第二半导体有源区上延伸并与第一半导体有源区相对。

公开(公告)号：US08645078B2

公开(公告)日：2014-02-04

申请号：US13303861

申请日：2011-11-23

申请人： Tae-jin Ahn ,  Soyeon Ahn ,  Sung-ho Won ,  Su-hyeon Kim ,  Taesung Park ,  Sung-young Lee ,  Seung-yeoun Lee ,  Bora Yeon ,  Young-ho Park

发明人： Tae-jin Ahn ,  Soyeon Ahn ,  Sung-ho Won ,  Su-hyeon Kim ,  Taesung Park ,  Sung-young Lee ,  Seung-yeoun Lee ,  Bora Yeon ,  Young-ho Park

IPC分类号： G06F19/00 ,  G11C17/00 ,  G06F15/00

CPC分类号： G06F19/22

摘要： A method of recovering a nucleic acid sequence using a probe map includes: aligning a probe onto a target sequence based on a result in which the probe is hybridized to the target sequence; determining a representative value representing each aligned position of the probe; and recovering a base sequence of the target sequence by using a probe map to which the determined representative values and base sequence information of the probe are mapped.

摘要翻译： 使用探针图回收核酸序列的方法包括：基于探针与靶序列杂交的结果将探针对准靶序列; 确定表示探针的每个对准位置的代表值; 以及通过使用映射了所述探测器的确定的代表值和碱基序列信息的探针图来恢复所述目标序列的碱基序列。

公开(公告)号：US20110318890A1

公开(公告)日：2011-12-29

申请号：US13229050

申请日：2011-09-09

申请人： Sung-young Lee ,  Dong-suk Shin

发明人： Sung-young Lee ,  Dong-suk Shin

IPC分类号： H01L21/336

CPC分类号： H01L29/66651 ,  H01L29/0653 ,  H01L29/66553 ,  H01L29/66606 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78612 ,  H01L29/78654

摘要： Semiconductor-on-insulator (SOI) field effect transistors include a semiconductor substrate and a first semiconductor active region on a first portion of a surface of the substrate. A first electrically insulating layer is provided. This first electrically insulating layer extends on a second portion of the surface of the substrate and also on a first sidewall of the first semiconductor active region. A second electrically insulating layer is provided, which extends on a third portion of the surface of the semiconductor substrate. The second electrically insulating layer also extends on a second sidewall of the first semiconductor active region. A second semiconductor active region is provided on the first semiconductor active region. The second semiconductor active region extends on the first semiconductor active region and on ends of the first and second electrically insulating layers. Source and drain regions are also provided, which are electrically coupled to opposite ends of the second semiconductor active region. An insulated gate electrode extends on the second semiconductor active region and opposite the first semiconductor active region.

摘要翻译： 绝缘体上半导体（SOI）场效应晶体管包括在衬底表面的第一部分上的半导体衬底和第一半导体有源区。 提供第一电绝缘层。 该第一电绝缘层在衬底的表面的第二部分上以及在第一半导体有源区的第一侧壁上延伸。 提供了第二电绝缘层，其在半导体衬底的表面的第三部分上延伸。 第二电绝缘层也在第一半导体有源区的第二侧壁上延伸。 第二半导体有源区设置在第一半导体有源区上。 第二半导体有源区在第一半导体有源区和第一和第二电绝缘层的端部上延伸。 还提供了源极和漏极区域，其电耦合到第二半导体有源区域的相对端。 绝缘栅电极在第二半导体有源区上延伸并与第一半导体有源区相对。

公开(公告)号：US20050285194A1

公开(公告)日：2005-12-29

申请号：US11082069

申请日：2005-03-16

申请人： Sung-young Lee ,  Dong-suk Shin

发明人： Sung-young Lee ,  Dong-suk Shin

IPC分类号： H01L21/00 ,  H01L21/336 ,  H01L27/01 ,  H01L29/06 ,  H01L29/786

CPC分类号： H01L29/66651 ,  H01L29/0653 ,  H01L29/66553 ,  H01L29/66606 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78612 ,  H01L29/78654

摘要： Semiconductor-on-insulator (SOI) field effect transistors include a semiconductor substrate and a first semiconductor active region on a first portion of a surface of the substrate. A first electrically insulating layer is provided. This first electrically insulating layer extends on a second portion of the surface of the substrate and also on a first sidewall of the first semiconductor active region. A second electrically insulating layer is provided, which extends on a third portion of the surface of the semiconductor substrate. The second electrically insulating layer also extends on a second sidewall of the first semiconductor active region. A second semiconductor active region is provided on the first semiconductor active region. The second semiconductor active region extends on the first semiconductor active region and on ends of the first and second electrically insulating layers. Source and drain regions are also provided, which are electrically coupled to opposite ends of the second semiconductor active region. An insulated gate electrode extends on the second semiconductor active region and opposite the first semiconductor active region.

摘要翻译： 绝缘体上半导体（SOI）场效应晶体管包括在衬底表面的第一部分上的半导体衬底和第一半导体有源区。 提供第一电绝缘层。 该第一电绝缘层在衬底的表面的第二部分上以及在第一半导体有源区的第一侧壁上延伸。 提供了第二电绝缘层，其在半导体衬底的表面的第三部分上延伸。 第二电绝缘层也在第一半导体有源区的第二侧壁上延伸。 第二半导体有源区设置在第一半导体有源区上。 第二半导体有源区在第一半导体有源区和第一和第二电绝缘层的端部上延伸。 还提供了源极和漏极区域，其电耦合到第二半导体有源区域的相对端。 绝缘栅电极在第二半导体有源区上延伸并与第一半导体有源区相对。

公开(公告)号：US20050285193A1

公开(公告)日：2005-12-29

申请号：US11081538

申请日：2005-03-17

申请人： Sung-young Lee ,  Dong-suk Shin

发明人： Sung-young Lee ,  Dong-suk Shin

IPC分类号： H01L21/00 ,  H01L21/336 ,  H01L27/01 ,  H01L29/786

CPC分类号： H01L29/78639 ,  H01L29/66772 ,  H01L29/78621 ,  H01L29/78654 ,  H01L29/78687

摘要： A semiconductor device and related method of manufacture are disclosed. The semiconductor device comprises a gate electrode formed on a semiconductor substrate, an active region containing spaces formed below the gate electrode, a channel region formed between the gate electrode and the spaces, and source and drain regions formed on opposite sides of the gate electrode within the active region. The spaces are formed by etching a semiconductor layer formed below the gate electrode in the active region.

摘要翻译： 公开了一种半导体器件及其制造方法。 半导体器件包括形成在半导体衬底上的栅电极，形成在栅电极下方的空间的有源区，形成在栅电极和空间之间的沟道区，以及形成在栅电极的相对侧上的源极和漏极区 活跃区域。 通过在活性区域中蚀刻形成在栅电极下方的半导体层来形成空间。

公开(公告)号：US08263444B2

公开(公告)日：2012-09-11

申请号：US13229050

申请日：2011-09-09

申请人： Sung-young Lee ,  Dong-suk Shin

发明人： Sung-young Lee ,  Dong-suk Shin

IPC分类号： H01L21/84

CPC分类号： H01L29/66651 ,  H01L29/0653 ,  H01L29/66553 ,  H01L29/66606 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78612 ,  H01L29/78654

摘要： Semiconductor-on-insulator (SOI) field effect transistors include a semiconductor substrate and a first semiconductor active region on a first portion of a surface of the substrate. A first electrically insulating layer is provided. This first electrically insulating layer extends on a second portion of the surface of the substrate and also on a first sidewall of the first semiconductor active region. A second electrically insulating layer is provided, which extends on a third portion of the surface of the semiconductor substrate. The second electrically insulating layer also extends on a second sidewall of the first semiconductor active region. A second semiconductor active region is provided on the first semiconductor active region. The second semiconductor active region extends on the first semiconductor active region and on ends of the first and second electrically insulating layers. Source and drain regions are also provided, which are electrically coupled to opposite ends of the second semiconductor active region. An insulated gate electrode extends on the second semiconductor active region and opposite the first semiconductor active region.

摘要翻译： 绝缘体上半导体（SOI）场效应晶体管包括在衬底表面的第一部分上的半导体衬底和第一半导体有源区。 提供第一电绝缘层。 该第一电绝缘层在衬底的表面的第二部分上以及在第一半导体有源区的第一侧壁上延伸。 提供了第二电绝缘层，其在半导体衬底的表面的第三部分上延伸。 第二电绝缘层也在第一半导体有源区的第二侧壁上延伸。 第二半导体有源区设置在第一半导体有源区上。 第二半导体有源区在第一半导体有源区和第一和第二电绝缘层的端部上延伸。 还提供了源极和漏极区域，其电耦合到第二半导体有源区域的相对端。 绝缘栅电极在第二半导体有源区上延伸并与第一半导体有源区相对。

公开(公告)号：US08017461B2

公开(公告)日：2011-09-13

申请号：US12721944

申请日：2010-03-11

申请人： Sung-young Lee ,  Dong-suk Shin

发明人： Sung-young Lee ,  Dong-suk Shin

IPC分类号： H01L21/84

CPC分类号： H01L29/66651 ,  H01L29/0653 ,  H01L29/66553 ,  H01L29/66606 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78612 ,  H01L29/78654

摘要： Semiconductor-on-insulator (SOI) field effect transistors include a semiconductor substrate and a first semiconductor active region on a first portion of a surface of the substrate. A first electrically insulating layer is provided. This first electrically insulating layer extends on a second portion of the surface of the substrate and also on a first sidewall of the first semiconductor active region. A second electrically insulating layer is provided, which extends on a third portion of the surface of the semiconductor substrate. The second electrically insulating layer also extends on a second sidewall of the first semiconductor active region. A second semiconductor active region is provided on the first semiconductor active region. The second semiconductor active region extends on the first semiconductor active region and on ends of the first and second electrically insulating layers. Source and drain regions are also provided, which are electrically coupled to opposite ends of the second semiconductor active region. An insulated gate electrode extends on the second semiconductor active region and opposite the first semiconductor active region.

摘要翻译： 绝缘体上半导体（SOI）场效应晶体管包括在衬底表面的第一部分上的半导体衬底和第一半导体有源区。 提供第一电绝缘层。 该第一电绝缘层在衬底的表面的第二部分上以及在第一半导体有源区的第一侧壁上延伸。 提供了第二电绝缘层，其在半导体衬底的表面的第三部分上延伸。 第二电绝缘层也在第一半导体有源区的第二侧壁上延伸。 第二半导体有源区设置在第一半导体有源区上。 第二半导体有源区在第一半导体有源区和第一和第二电绝缘层的端部上延伸。 还提供了源极和漏极区域，其电耦合到第二半导体有源区域的相对端。 绝缘栅电极在第二半导体有源区上延伸并与第一半导体有源区相对。