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公开(公告)号：US20210407878A1
公开(公告)日：2021-12-30
申请号：US16912890
申请日：2020-06-26
Applicant: GENERAL ELECTRIC COMPANY
Inventor： David Richard Esler , Emad A. Andarawis
Abstract: A device comprises: a high temperature semiconductor device comprising a first surface, wherein the high temperature semiconductor device comprises an active area and a termination area disposed adjacent to the active area; an inorganic dielectric insulating layer disposed on the first surface, wherein the inorganic dielectric insulating layer fills a volume extending over an entirety of the termination area and comprises a thickness greater than or equal to 25 μm and less than or equal to 500 μm; and an electrical connector connecting the active area of the high temperature semiconductor device to an additional component of the device.
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公开(公告)号：US09417048B2
公开(公告)日：2016-08-16
申请号：US13665192
申请日：2012-10-31
Applicant: General Electric Company
Inventor： David Richard Esler , Emad Andarawis Andarawis , Wayne Charles Hasz , Mahadevan Balasubramaniam
CPC classification number: G01B7/14
Abstract: A capacitive sensor device and a method of manufacture are provided. The capacitive sensor device includes at least one sensor tip that includes an electrode positioned at a first end of the sensor tip, and a stem member coupled to the electrode and extending toward a second end of the sensor tip. The device also includes a coaxial cable including a center conductor, the center conductor coupled to the sensor tip at the second end, and an insulation layer supporting the sensor tip between the first and second ends. The insulation layer includes a metallization on a portion surrounding the second end of the sensor tip. The device further includes a casing surrounding a portion of the coaxial cable, the metallization, and the coupling of the center conductor and the sensor tip, wherein a braze joint is formed between the casing and the metallization to form a hollow, hermetic cavity.
Abstract translation: 提供了电容传感器装置和制造方法。 电容传感器装置包括至少一个传感器尖端，其包括位于传感器尖端的第一端处的电极，以及耦合到电极并朝向传感器尖端的第二端延伸的杆构件。 该装置还包括同轴电缆，该同轴电缆包括中心导体，中心导体在第二端处耦合到传感器尖端，以及绝缘层，其在第一和第二端之间支撑传感器尖端。 绝缘层包括在围绕传感器顶端的第二端的部分上的金属化。 该装置还包括围绕同轴电缆的一部分的壳体，金属化以及中心导体和传感器尖端的耦合，其中在壳体和金属化之间形成钎焊接头以形成中空的密封腔。
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公开(公告)号：US20140119884A1
公开(公告)日：2014-05-01
申请号：US13665192
申请日：2012-10-31
Applicant: GENERAL ELECTRIC COMPANY
Inventor： David Richard Esler , Emad Andarawis Andarawis , Wayne Charles Hasz , Mahadevan Balasubramaniam
CPC classification number: G01B7/14
Abstract: A capacitive sensor device and a method of manufacture are provided. The capacitive sensor device includes at least one sensor tip that includes an electrode positioned at a first end of the sensor tip, and a stem member coupled to the electrode and extending toward a second end of the sensor tip. The device also includes a coaxial cable including a center conductor, the center conductor coupled to the sensor tip at the second end, and an insulation layer supporting the sensor tip between the first and second ends. The insulation layer includes a metallization on a portion surrounding the second end of the sensor tip. The device further includes a casing surrounding a portion of the coaxial cable, the metallization, and the coupling of the center conductor and the sensor tip, wherein a braze joint is formed between the casing and the metallization to form a hollow, hermetic cavity.
Abstract translation: 提供了电容传感器装置和制造方法。 电容传感器装置包括至少一个传感器尖端，其包括位于传感器尖端的第一端处的电极，以及耦合到电极并朝向传感器尖端的第二端延伸的杆构件。 该装置还包括同轴电缆，该同轴电缆包括中心导体，中心导体在第二端处耦合到传感器尖端，以及绝缘层，其在第一和第二端之间支撑传感器尖端。 绝缘层包括在围绕传感器顶端的第二端的部分上的金属化。 该装置还包括围绕同轴电缆的一部分的壳体，金属化以及中心导体和传感器尖端的耦合，其中在壳体和金属化之间形成钎焊接头以形成中空的密封腔。
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