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公开(公告)号:US08872328B2
公开(公告)日:2014-10-28
申请号:US13720351
申请日:2012-12-19
Applicant: General Electric Company
Inventor: Eladio Clemente Delgado , John Stanley Glaser , Brian Lynn Rowden
CPC classification number: H01L23/473 , H01L23/13 , H01L23/3735 , H01L23/46 , H01L24/19 , H01L24/24 , H01L24/83 , H01L25/50 , H01L2224/04105 , H01L2224/24137 , H01L2224/24195 , H01L2224/32225 , H01L2224/73267 , H01L2224/83815 , H01L2224/92144 , H01L2224/9222 , H01L2924/01029 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15787 , H01L2924/19043 , H01L2924/19105 , H01L2924/20105 , H01L2924/20106 , H01L2924/00
Abstract: An integrated power module includes a substantially planar insulated metal substrate having at least one cut-out region; at least one substantially planar ceramic substrate disposed within the cut-out region, wherein the ceramic substrate is framed on at least two sides by the insulated metal substrate, the ceramic substrate including a first metal layer on a first side and a second metal layer on a second side; at least one power semiconductor device coupled to the first side of the ceramic substrate; at least one control device coupled to a first surface of the insulated metal substrate; a power overlay electrically connecting the at least one semiconductor power device and the at least one control device; and a cooling fluid reservoir operatively connected to the second metal layer of the at least one ceramic substrate, wherein a plurality of cooling fluid passages are provided in the cooling fluid reservoir.
Abstract translation: 集成功率模块包括具有至少一个切出区域的基本上平面的绝缘金属基板; 设置在所述切出区域内的至少一个基本上平面的陶瓷基板,其中所述陶瓷基板通过所述绝缘金属基板在至少两侧框架,所述陶瓷基板包括在第一侧上的第一金属层和在第一侧上的第二金属层 第二面 耦合到陶瓷衬底的第一侧的至少一个功率半导体器件; 耦合到所述绝缘金属基板的第一表面的至少一个控制装置; 功率覆盖层,电连接所述至少一个半导体功率器件和所述至少一个控制器件; 以及可操作地连接到所述至少一个陶瓷基板的第二金属层的冷却流体储存器,其中在所述冷却流体储存器中设置多个冷却流体通道。