公开(公告)号：US20140273423A1

公开(公告)日：2014-09-18

申请号：US13798616

申请日：2013-03-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jody A. Fronheiser ,  Jeremy A. Wahl ,  Kerem Akarvardar ,  Ajey P. Jacob ,  Daniel T. Pham

IPC: H01L29/66

CPC classification number: H01L29/42392 ,  B82Y40/00 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/78696

Abstract: One method disclosed herein includes forming a layer of silicon/germanium having a germanium concentration of at least 30% on a semiconducting substrate, forming a plurality of spaced-apart trenches that extend through the layer of silicon/germanium and at least partially into the semiconducting substrate, wherein the trenches define a fin structure for the device comprised of a portion of the substrate and a portion of the layer of silicon/germanium, the portion of the layer of silicon/germanium having a first cross-sectional configuration, forming a layer of insulating material in the trenches and above the fin structure, performing an anneal process on the device so as to cause the first cross-sectional configuration of the layer of silicon/germanium to change to a second cross-sectional configuration that is different from the first cross-sectional configuration, and forming a final gate structure around at least a portion of the layer of silicon/germanium having the second cross-sectional configuration.

Abstract translation: 本文公开的一种方法包括在半导体衬底上形成具有至少30％的锗浓度的硅/锗层，形成多个间隔开的沟槽，其延伸穿过硅/锗层并且至少部分地进入半导体 衬底，其中所述沟槽限定由所述衬底的一部分和所述硅/锗层的一部分组成的器件的鳍结构，所述硅/锗层的所述部分具有第一横截面构造，形成层 的绝缘材料在沟槽中并在鳍结构之上，对器件进行退火处理，以使硅/锗层的第一截面构型变为不同于第二截面结构 第一横截面构造，以及围绕具有第二横截面的硅/锗层的至少一部分形成最终栅极结构 功能配置

公开(公告)号：US20140227849A1

公开(公告)日：2014-08-14

申请号：US13764839

申请日：2013-02-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： Nicholas V. LiCausi ,  Jeremy A. Wahl

IPC: H01L29/66

CPC classification number: H01L29/66477 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/775

Abstract: One illustrative method disclosed herein includes forming an initial nanowire structure having an initial cross-sectional size, performing a doping diffusion process to form an N-type doped region in the initial nanowire structure and performing an etching process to remove at least a portion of the doped region and thereby define a final nanowire structure having a final cross-sectional size, wherein the final cross-sectional size is smaller than the initial cross-sectional size.

Abstract translation: 本文公开的一种说明性方法包括形成具有初始横截面尺寸的初始纳米线结构，执行掺杂扩散工艺以在初始纳米线结构中形成N型掺杂区，并执行蚀刻工艺以去除至少一部分 从而限定具有最终横截面尺寸的最终纳米线结构，其中最终横截面尺寸小于初始横截面尺寸。