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    METHODS OF FORMING A SEMICONDUCTOR DEVICE WITH A NANOWIRE CHANNEL STRUCTURE BY PERFORMING AN ANNEAL PROCESS
    2.
    发明申请
    METHODS OF FORMING A SEMICONDUCTOR DEVICE WITH A NANOWIRE CHANNEL STRUCTURE BY PERFORMING AN ANNEAL PROCESS 有权
    通过执行ANNEAL过程形成具有纳米通道结构的半导体器件的方法

    公开(公告)号：US20140273423A1

    公开(公告)日：2014-09-18

    申请号：US13798616

    申请日：2013-03-13

    Applicant: GLOBALFOUNDRIES INC.

    Inventor： Jody A. Fronheiser ,  Jeremy A. Wahl ,  Kerem Akarvardar ,  Ajey P. Jacob ,  Daniel T. Pham

    IPC: H01L29/66

    CPC classification number: H01L29/42392 ,  B82Y40/00 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/78696

    Abstract: One method disclosed herein includes forming a layer of silicon/germanium having a germanium concentration of at least 30% on a semiconducting substrate, forming a plurality of spaced-apart trenches that extend through the layer of silicon/germanium and at least partially into the semiconducting substrate, wherein the trenches define a fin structure for the device comprised of a portion of the substrate and a portion of the layer of silicon/germanium, the portion of the layer of silicon/germanium having a first cross-sectional configuration, forming a layer of insulating material in the trenches and above the fin structure, performing an anneal process on the device so as to cause the first cross-sectional configuration of the layer of silicon/germanium to change to a second cross-sectional configuration that is different from the first cross-sectional configuration, and forming a final gate structure around at least a portion of the layer of silicon/germanium having the second cross-sectional configuration.

    Abstract translation: 本文公开的一种方法包括在半导体衬底上形成具有至少30％的锗浓度的硅/锗层，形成多个间隔开的沟槽，其延伸穿过硅/锗层并且至少部分地进入半导体 衬底，其中所述沟槽限定由所述衬底的一部分和所述硅/锗层的一部分组成的器件的鳍结构，所述硅/锗层的所述部分具有第一横截面构造，形成层 的绝缘材料在沟槽中并在鳍结构之上，对器件进行退火处理，以使硅/锗层的第一截面构型变为不同于第二截面结构 第一横截面构造，以及围绕具有第二横截面的硅/锗层的至少一部分形成最终栅极结构 功能配置

    METHODS OF FORMING LOW DEFECT REPLACEMENT FINS FOR A FINFET SEMICONDUCTOR DEVICE AND THE RESULTING DEVICES
    3.
    发明申请
    METHODS OF FORMING LOW DEFECT REPLACEMENT FINS FOR A FINFET SEMICONDUCTOR DEVICE AND THE RESULTING DEVICES 有权
    形成用于FINFET半导体器件和结果器件的低缺陷替换FIS的方法

    公开(公告)号：US20160013296A1

    公开(公告)日：2016-01-14

    申请号：US14860276

    申请日：2015-09-21

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Jody Fronheiser ,  Ajey P. Jacob ,  Witold P. Maszara ,  Kerem Akarvardar

    IPC: H01L29/66 ,  H01L29/165 ,  H01L29/267 ,  H01L29/78

    CPC classification number: H01L29/66795 ,  H01L29/165 ,  H01L29/267 ,  H01L29/785 ,  H01L29/7851

    Abstract: One illustrative device disclosed herein includes a substrate fin formed in a substrate comprised of a first semiconductor material, wherein at least a sidewall of the substrate fin is positioned substantially in a crystallographic direction of the crystalline structure of the substrate, a replacement fin structure positioned above the substrate fin, wherein the replacement fin structure is comprised of a semiconductor material that is different from the first semiconductor material, and a gate structure positioned around at least a portion of the replacement fin structure.

    Abstract translation: 本文公开的一个示例性器件包括形成在由第一半导体材料构成的衬底中的衬底鳍片，其中衬底鳍片的至少一个侧壁基本上位于衬底的晶体结构的<100>晶体方向上，替换鳍片 位于所述衬底翅片上方的结构，其中所述替换翅片结构由与所述第一半导体材料不同的半导体材料和位于所述替换翅片结构的至少一部分周围的栅极结构构成。

    Methods of forming a semiconductor device with a nanowire channel structure by performing an anneal process
    4.
    发明授权
    Methods of forming a semiconductor device with a nanowire channel structure by performing an anneal process 有权
    通过进行退火处理形成具有纳米线通道结构的半导体器件的方法

    公开(公告)号：US08853019B1

    公开(公告)日：2014-10-07

    申请号：US13798616

    申请日：2013-03-13

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Jody A. Fronheiser ,  Jeremy A. Wahl ,  Kerem Akarvardar ,  Ajey P. Jacob ,  Daniel T. Pham

    IPC: H01L29/94 ,  H01L29/66 ,  B82Y40/00

    CPC classification number: H01L29/42392 ,  B82Y40/00 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/78696

    Abstract: One method disclosed herein includes forming a layer of silicon/germanium having a germanium concentration of at least 30% on a semiconducting substrate, forming a plurality of spaced-apart trenches that extend through the layer of silicon/germanium and at least partially into the semiconducting substrate, wherein the trenches define a fin structure for the device comprised of a portion of the substrate and a portion of the layer of silicon/germanium, the portion of the layer of silicon/germanium having a first cross-sectional configuration, forming a layer of insulating material in the trenches and above the fin structure, performing an anneal process on the device so as to cause the first cross-sectional configuration of the layer of silicon/germanium to change to a second cross-sectional configuration that is different from the first cross-sectional configuration, and forming a final gate structure around at least a portion of the layer of silicon/germanium having the second cross-sectional configuration.

    Abstract translation: 本文公开的一种方法包括在半导体衬底上形成具有至少30％的锗浓度的硅/锗层，形成多个间隔开的沟槽，其延伸穿过硅/锗层并且至少部分地进入半导体 衬底，其中所述沟槽限定由所述衬底的一部分和所述硅/锗层的一部分组成的器件的鳍结构，所述硅/锗层的所述部分具有第一横截面构造，形成层 的绝缘材料在沟槽中并在鳍结构之上，对器件进行退火处理，以使硅/锗层的第一截面构型变为不同于第二截面结构 第一横截面构造，以及围绕具有第二横截面的硅/锗层的至少一部分形成最终栅极结构 功能配置

    METHODS OF FORMING LOW DEFECT REPLACEMENT FINS FOR A FINFET SEMICONDUCTOR DEVICE AND THE RESULTING DEVICES
    5.
    发明申请
    METHODS OF FORMING LOW DEFECT REPLACEMENT FINS FOR A FINFET SEMICONDUCTOR DEVICE AND THE RESULTING DEVICES 审中-公开
    形成用于FINFET半导体器件和结果器件的低缺陷替换FIS的方法

    公开(公告)号：US20140264488A1

    公开(公告)日：2014-09-18

    申请号：US13839998

    申请日：2013-03-15

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Jody Fronheiser ,  Ajey P. Jacob ,  Witold P. Maszara ,  Kerem Akarvardar

    IPC: H01L29/66 ,  H01L29/78

    CPC classification number: H01L29/66795 ,  H01L29/165 ,  H01L29/267 ,  H01L29/785 ,  H01L29/7851

    Abstract: One illustrative device disclosed herein includes a substrate fin formed in a substrate comprised of a first semiconductor material, wherein at least a sidewall of the substrate fin is positioned substantially in a crystallographic direction of the crystalline structure of the substrate, a replacement fin structure positioned above the substrate fin, wherein the replacement fin structure is comprised of a semiconductor material that is different from the first semiconductor material, and a gate structure positioned around at least a portion of the replacement fin structure.

    Abstract translation: 本文公开的一个示例性器件包括形成在由第一半导体材料构成的衬底中的衬底鳍片，其中衬底鳍片的至少一个侧壁基本上位于衬底的晶体结构的<100>晶体方向上，替换鳍片 位于所述衬底翅片上方的结构，其中所述替换翅片结构由与所述第一半导体材料不同的半导体材料和位于所述替换翅片结构的至少一部分周围的栅极结构构成。

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