公开(公告)号：US20160197080A1

公开(公告)日：2016-07-07

申请号：US15067307

申请日：2016-03-11

Applicant: GlobalFoundries Inc.

Inventor： John B. Campi, JR. ,  Robert J. Gauthier, JR. ,  Junjun Li ,  Rahul Mishra ,  Souvick Mitra ,  Mujahid Muhammad

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/10 ,  H01L29/06 ,  H01L29/08

CPC classification number: H01L27/0928 ,  H01L21/761 ,  H01L21/823814 ,  H01L21/823892 ,  H01L27/092 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0878 ,  H01L29/1045 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7801 ,  H01L29/7816 ,  H01L29/7835

Abstract: Disclosed are semiconductor structures. Each semiconductor structure can comprise a substrate and at least one laterally double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) on the substrate. Each LDMOSFET can have a fully-depleted deep drain drift region (i.e., a fully depleted deep ballast resistor region) for providing a relatively high blocking voltage. Different configurations for the drain drift regions are disclosed and these different configurations can also vary as a function of the conductivity type of the LDMOSFET. Additionally, each semiconductor structure can comprise an isolation band positioned below the LDMOSFET and an isolation well positioned laterally around the LDMOSFET and extending vertically to the isolation band such that the LDMOSFET is electrically isolated from both a lower portion of the substrate and any adjacent devices on the substrate.