公开(公告)号：US20240019651A1

公开(公告)日：2024-01-18

申请号：US17812023

申请日：2022-07-12

Applicant: GlobalFoundries U.S. Inc.

Inventor： Zhuojie Wu ,  Yusheng Bian

IPC: G02B6/42 ,  G02B6/122 ,  H04B10/079 ,  G02B6/12

CPC classification number: G02B6/4286 ,  G02B6/1228 ,  H04B10/07955 ,  G02B2006/12147 ,  G02B2006/12061

Abstract: Disclosed is a photonic integrated circuit (PIC) structure including a scattering light-based monitor with photodetectors (e.g., PIN and/or avalanche photodiodes) placed adjacent to one or both sides of an end portion (i.e., a coupler) of a waveguide core at an optical interface with another optical device. The photodetectors are placed in such a way as to enable sensing of scattering light emitted from the end portion as light signals are received (e.g., either from the optical device for propagation to the main body of the waveguide core or from the main body for transmission to the optical device). Also disclosed are a monitoring system and method including the PIC chip structure with the above-described scattering light-based monitor. The system and method assess the optical interface using electric signals generated by the photodetectors.

公开(公告)号：US20230408763A1

公开(公告)日：2023-12-21

申请号：US17807257

申请日：2022-06-16

Applicant: GlobalFoundries U.S. Inc.

Inventor： Zhuojie Wu ,  Yusheng Bian ,  Andreas D. Stricker

IPC: G02B6/122 ,  G02B6/13

CPC classification number: G02B6/122 ,  G02B2006/12126 ,  G02B6/13

Abstract: The disclosure relates to a PIC structure including a photonic component on a semiconductor substrate. A passive optical guard is composed of a light absorbing material and is in proximity to the photonic component. The passive optical guard includes at least a portion in an active semiconductor layer of the semiconductor substrate and may be entirely below a first metal layer. The passive optical guard may include at least one of: a germanium body positioned at least partially in a silicon element in the active semiconductor layer, a silicon body having a high dopant concentration in the active semiconductor layer, and a polysilicon body having a high dopant concentration over the silicon body.

公开(公告)号：US11531172B2

公开(公告)日：2022-12-20

申请号：US15930876

申请日：2020-05-13

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Zhuojie Wu ,  Bo Peng

IPC: G01J3/18 ,  G02B6/42 ,  G02B6/43 ,  G02B6/293

Abstract: Structures for a photonics chip, testing methods for a photonics chip, and methods of forming a structure for a photonics chip. A photonics chip includes a first waveguide, a second waveguide, an optical tap coupling the first waveguide to the second waveguide, and a photodetector coupled to the second waveguide. A laser is attached to the photonics chip. The laser is configured to generate laser light directed by the first waveguide to the optical tap.