公开(公告)号：US20230268243A1

公开(公告)日：2023-08-24

申请号：US18310071

申请日：2023-05-01

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Bin Hu ,  Huantao Duan

IPC: H01L23/373 ,  H01L29/16 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L23/3732 ,  H01L29/1602 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786

Abstract: A semiconductor device includes a substrate, and an epitaxial layer and an electrode that are located on the substrate. The substrate has a diamond structure that longitudinally penetrates the substrate. The diamond structure may be longitudinally divided into a first diamond part and a second diamond part below the first diamond part. The first diamond part and the second diamond part have different lateral dimensions.