LIGHT-EMITTING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND LIGHT- EMITTING APPARATUS

    公开(公告)号:US20220069254A1

    公开(公告)日:2022-03-03

    申请号:US17393661

    申请日:2021-08-04

    IPC分类号: H01L51/52 H01L27/32 H01L51/56

    摘要: A light-emitting substrate includes; a base, an isolation portion disposed on the base and located in an isolation region located outside a light-emitting region, and a second insulating pattern located in the light-emitting region. The isolation portion includes a first conductive pattern, a second conductive pattern and a first insulating pattern that are sequentially stacked on the base; an orthogonal projection of the first conductive pattern on the base is located within an orthogonal projection of the second conductive pattern on the base; and a side face of the first conductive pattern proximate to the light-emitting region and a corresponding side face of the second conductive pattern proximate to the light-emitting region have a first gap therebetween. A side face of the second insulating pattern proximate to the first insulating pattern and a side face of the first insulating pattern proximate to the second insulating pattern have a second gap therebetween.

    LIGHT-EMITTING SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND LIGHT-EMITTING APPARATUS

    公开(公告)号:US20240164179A1

    公开(公告)日:2024-05-16

    申请号:US17918630

    申请日:2021-11-23

    IPC分类号: H10K59/80 H10K59/12

    CPC分类号: H10K59/80522 H10K59/1201

    摘要: A light-emitting substrate includes: a substrate; and at least one coupling portion and at least one auxiliary cathode pattern disposed on the substrate. Each auxiliary cathode region is provided with a coupling portion and an auxiliary cathode pattern coupled to the coupling portion. The auxiliary cathode pattern includes at least one disconnection portion, and each disconnection portion includes first, second and third conductive pattern layers. An orthographic projection of an edge of the second conductive pattern layer on the substrate is located within orthographic projections of edges of the third and first conductive pattern layers on the substrate. A total perimeter of at least one orthographic projection, on the substrate, of at least one edge of at least one third conductive pattern layer in the at least one disconnection portion is greater than a perimeter of an orthographic projection of an edge of the auxiliary cathode region on the substrate.

    ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE

    公开(公告)号:US20210367017A1

    公开(公告)日:2021-11-25

    申请号:US17241703

    申请日:2021-04-27

    IPC分类号: H01L27/32

    摘要: An array substrate, a method for manufacturing the array substrate and a display device are provided. The array substrate includes: a base substrate, and a thin film transistor, a storage capacitor, and a lapping pattern for connecting the thin film transistor to the storage capacitor arranged on the base substrate; wherein the thin film transistor includes a semiconductor layer, a gate insulation layer, a gate electrode, an interlayer insulation layer, a source electrode and a drain electrode arranged sequentially in that order; the interlayer insulation layer includes at least two inorganic insulation layers and at least one organic insulation layer laminated one on another, and both a layer proximate to the base substrate and a layer distal to the base substrate in the interlayer insulation layer are the inorganic insulation layers.

    INDUCTIVELY COUPLED PLASMA DEVICE
    30.
    发明申请

    公开(公告)号:US20180174799A1

    公开(公告)日:2018-06-21

    申请号:US15736278

    申请日:2017-05-25

    发明人: Yu WEI Jun LIU

    IPC分类号: H01J37/32

    摘要: The present disclosure provides an inductively coupled plasma device, comprising a reaction chamber, a dielectric coupling plate, and a coil above the dielectric coupling plate. The dielectric coupling plate comprises at least two layers. The dielectric coupling plate comprises a plurality of regions, each region being provided with an electric field regulating structure, the electric field regulating structure being located between the at least two layers of the dielectric coupling plate. The electric field regulating structure is configured to regulate an intensity of an electric field that enters the reaction chamber through each region of the dielectric coupling plate.