公开(公告)号：US07276753B2

公开(公告)日：2007-10-02

申请号：US11163600

申请日：2005-10-25

Applicant: Hsiao-Che Wu

Inventor： Hsiao-Che Wu

IPC: H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC classification number: H01L27/10861 ,  H01L27/10867 ,  H01L27/10873 ,  H01L29/785

Abstract: A method of fabricating a dynamic random access memory cell is provided. A substrate having a patterned mask layer thereon and a deep trench therein is provided. The patterned mask layer exposes the deep trench. A deep trench capacitor is formed inside the deep trench. Thereafter, a trench is formed in the substrate on one side of the deep trench capacitor. The trench exposes a portion of the upper electrode of the deep trench capacitor and a portion of the substrate. After that, a semiconductor strip is formed in the trench. A gate dielectric layer is formed over the substrate to cover the exposed semiconductor strip and the substrate. A gate is formed over the gate dielectric layer such that the gate and the semiconductor strip crosses over each other, and the gate-covered portion of the semiconductor strip serves as a channel region.

Abstract translation: 提供一种制造动态随机存取存储单元的方法。 提供其上具有图案化掩模层并在其中具有深沟槽的衬底。 图案化掩模层暴露深沟槽。 在深沟槽内形成深沟槽电容器。 此后，在深沟槽电容器的一侧上的衬底中形成沟槽。 沟槽暴露了深沟槽电容器的上部电极的一部分和衬底的一部分。 之后，在沟槽中形成半导体条。 栅极电介质层形成在衬底上以覆盖暴露的半导体条和衬底。 栅极形成在栅极电介质层上，使得栅极和半导体条彼此交叉，并且半导体条的栅极覆盖部分用作沟道区。

公开(公告)号：US20060115952A1

公开(公告)日：2006-06-01

申请号：US10998929

申请日：2004-11-30

Applicant: Hsiao-Che Wu

Inventor： Hsiao-Che Wu

IPC: H01L21/00

CPC classification number: H01L29/66181 ,  H01L21/76895 ,  H01L27/10855 ,  H01L27/10867 ,  H01L28/91 ,  H01L29/417 ,  H01L29/945

Abstract: A method of forming a multilayer electrode capacitor is described. A trench is formed in a substrate or in an insulator layer. Two sets of conductive layers are deposited on the inner surface of the trench. The first set of conductive layers is electrically connected to each other, and so is the second set of conductive layers. Each of the second set of conductive layers is inserted between two first conductive layers, and dielectric layers are interposed between two conductive layers to form a multilayer electrode capacitor.

Abstract translation: 描述形成多层电极电容器的方法。 在衬底或绝缘体层中形成沟槽。 两组导电层沉积在沟槽的内表面上。 第一组导电层彼此电连接，第二组导电层也相互电连接。 第二组导电层中的每一个插入在两个第一导电层之间，并且电介质层插在两个导电层之间以形成多层电极电容器。

公开(公告)号：US06551928B2

公开(公告)日：2003-04-22

申请号：US09909816

申请日：2001-07-23

Applicant: Hsiao-Che Wu

Inventor： Hsiao-Che Wu

IPC: H01L2144

CPC classification number: H01L21/76838 ,  H01L21/28518

Abstract: A method of forming a semiconductor device with a polysilicon layer having a multi-layer tungsten-silicide (WSix) film formed on a surface thereof includes the steps of (1) forming a first layer of tungsten-silicide on the surface of the polysilicon layer; (2) forming a second layer of a material selected from tungsten and silicon on the first layer; (3) forming a third layer of tungsten-silicide on the second layer; and (4) thermally treating the multi-layer film resulting from steps (a)-(c) to form a multi-layer WSix film on the surface of the polysilicon layer, the multi-layer WSix film having a uniform small grain size. In various embodiments, steps (1)-(3) may be repeated one or more times. A semiconductor device includes a semiconductor body having a polysilicon layer formed on a surface thereof and a multilayered WSix film formed on a surface of the polysilicon layer by the process described above.

Abstract translation: 一种形成具有在其表面上形成的多层硅化钨（WSix）膜的多晶硅层的半导体器件的方法包括以下步骤：（1）在多晶硅层的表面上形成第一层硅化钨 ; （2）在第一层上形成选自钨和硅的材料的第二层; （3）在所述第二层上形成第三层硅化钨; 和（4）对由步骤（a） - （c）得到的多层膜进行热处理，以在多晶硅层的表面上形成多层WSix膜，该多层WSix膜具有均匀的小晶粒尺寸。 在各种实施例中，步骤（1） - （3）可以重复一次或多次。 半导体器件包括通过上述方法形成在其表面上形成的多晶硅层的半导体本体和在多晶硅层的表面上形成的多层WSix膜。

公开(公告)号：US06439244B1

公开(公告)日：2002-08-27

申请号：US09689929

申请日：2000-10-13

Applicant: Hsiao-Che Wu

Inventor： Hsiao-Che Wu

IPC: B08B600

CPC classification number: H01L21/67109 ,  H01J37/32082 ,  H01J2237/2001

Abstract: A sputter cleaning system and method are described which provide improved temperature control of the pedestal and thus of a substrate being sputter cleaned. The sputter cleaning system comprises a conducting metal pedestal to provide a conducting surface beneath a substrate being sputter processed. A cooling channel is formed in the metal pedestal. In one example the cooling channel typically is made up of a number of concentric, interconnected, circular cooling sub-channels. Other shape cooling channels, such as radial, can also be used. An inlet tube delivers a cooling liquid, such as water, to the cooling channel and an exhaust tube removes the cooling liquid from the cooling channel thereby removing heat from the pedestal. The cooling liquid removes heat from the pedestal, thereby controlling the temperature of the pedestal and the substrate undergoing sputter cleaning.

Abstract translation: 描述了一种溅射清洁系统和方法，其提供了基座的改进的温度控制，从而提供了被溅射清洁的基板。 溅射清洁系统包括导电金属基座，以在被溅射处理的基底之下提供导电表面。 在金属基座上形成冷却通道。 在一个示例中，冷却通道通常由多个同心的，互连的，圆形的冷却子通道组成。 也可以使用其他形状的冷却通道，例如径向。 入口管将诸如水的冷却液体输送到冷却通道，并且排气管从冷却通道移除冷却液体，从而从基座移除热量。 冷却液从底座移除热量，从而控制基座和进行溅射清洗的基板的温度。

公开(公告)号：US06360772B1

公开(公告)日：2002-03-26

申请号：US09608112

申请日：2000-06-30

Applicant: Hsiao-Che Wu

Inventor： Hsiao-Che Wu

IPC: G05D706

CPC classification number: G05D7/0635 ,  Y10S251/90 ,  Y10T137/7759 ,  Y10T137/7761

Abstract: A mass flow controller (MFC) for controlling the fluid flow in a conduit is configured to include a flow command input for issuing a flow control command, a control unit accepting the flow control command for generating a control signal, a flow-sensing device including a plurality of temperature sensors, a sensor circuit and an amplifier, an actuator being driven by the control unit, and a valve member including a valve being adjusted by the actuator for controlling the fluid flow in the conduit, a distortion controller being distorted in response to the control signal, and an elastic body being distorted in response to an external force resulting from the distortion of the distortion controller for changing the orifice size in the conduit. In addition, the valve can be designed to be fixed instead of being mobile so as to reduce the occurrence of particles resulting from the mutual frictions emerging among the moving parts employed in the valve member.

Abstract translation: 用于控制管道中的流体流动的质量流量控制器（MFC）被配置为包括用于发出流量控制命令的流量命令输入，接受用于产生控制信号的流量控制命令的控制单元，包括： 多个温度传感器，传感器电路和放大器，由控制单元驱动的致动器，以及阀构件，其包括由致动器调节的阀，用于控制管道中的流体流动，失真控制器响应失真 并且弹性体响应由变形控制器产生的外力而变形，以改变管道中的孔口尺寸。 此外，阀可以被设计成固定而不是可移动的，以便减少由在阀构件中使用的运动部件之间出现的相互摩擦而产生的颗粒的发生。