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公开(公告)号：US11333721B2
公开(公告)日：2022-05-17
申请号：US15160244
申请日：2016-05-20
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Wolfgang Raberg
IPC: G01R33/09
Abstract: Embodiments relate to xMR sensors, including giant magnetoresistive (GMR), tunneling magnetoresistive (TMR) or anisotropic magnetoresistive (AMR), and the configuration of xMR strips within xMR sensors. In an embodiment, an xMR strip includes a plurality of differently sized and/or differently oriented serially connected portions. In another embodiment, an xMR strip includes a varying width or other characteristic. Such configurations can address discontinuities associated with conventional xMR sensors and improve xMR sensor performance.
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公开(公告)号：US11009568B2
公开(公告)日：2021-05-18
申请号：US16001060
申请日：2018-06-06
Applicant: Infineon Technologies AG
Inventor： Dirk Hammerschmidt , Armin Satz , Juergen Zimmer
Abstract: A magnetoresistive sensor includes a magnetic reference layer. The magnetic reference layer includes a permanent closed flux magnetization pattern of a predetermined rotational direction. Furthermore, the magnetoresistive sensor includes a magnetic free layer. The magnetic free layer has a total lateral area that is smaller than a total lateral area of the magnetic reference layer. A centroid of the magnetic free layer is laterally displaced with respect to a centroid of the magnetic reference layer.
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公开(公告)号：US10113884B2
公开(公告)日：2018-10-30
申请号：US14840574
申请日：2015-08-31
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Hansjoerg Kuemmel , Harald Witschnig , Franz Jost , Hegedus Akos , Konrad Kapser , Llorenç Vallmajó I Ribas
Abstract: A magnetic angle sensor including a first Wheatstone bridge circuit having a plurality of first magnetoresistive elements; and a second Wheatstone bridge circuit having a plurality of second magnetoresistive elements, wherein the plurality of second magnetoresistive elements have diversity with respect to the plurality of first magnetoresistive elements.
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公开(公告)号：US20180100900A1
公开(公告)日：2018-04-12
申请号：US15836318
申请日：2017-12-08
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer
Abstract: A bridge circuit having a full-bridge circuit having a first branch and a second branch coupled in parallel, the first branch comprising a first half-bridge circuit and a first tunnel magnetoresistance (TMR) resistor cascade coupled in series, and the second branch comprising a second half-bridge circuit and a second TMR resistor cascade coupled in series, wherein the full-bridge circuit has an offset voltage of zero or substantially close to zero.
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公开(公告)号：US09691970B2
公开(公告)日：2017-06-27
申请号：US14966205
申请日：2015-12-11
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Wolfgang Raberg , Stephan Schmitt
Abstract: A magnetoresistive device includes a substrate and an electrically insulating layer arranged over the substrate. The magnetoresistive device further includes a first free layer embedded in the electrically insulating layer and a second free layer embedded in the electrically insulating layer. The first free layer and the second free layer are separated by a portion of the electrically insulating layer.
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Patent Agency Ranking
26.发明授权公开(公告)号：US09618589B2
公开(公告)日：2017-04-11
申请号：US14057214
申请日：2013-10-18
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Harald Witschnig
CPC classification number: G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3948 , G11B5/3961 , H01L27/22 , H01L43/12
Abstract: Embodiments relate to a sensor device including a layer stack 600, the layer stack 600 including at least ferromagnetic and non-magnetic layers formed on a common substrate 620. The sensor device 600 further includes at least a first magneto-resistive sensor element 711 provided by a first section 611 of the layer stack 600. The first magneto-resistive sensor element 711 herein is configured to generate a first signal. The sensor device 600 also includes a second magneto-resistive sensor element 712 provided by a second section 612 of the layer stack 610. The second magneto-resistive sensor element 712 herein is configured to generate a second signal for verifying the first signal.
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27.发明申请公开(公告)号：US20160308120A1
公开(公告)日：2016-10-20
申请号：US14688177
申请日：2015-04-16
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Andreas Strasser , Wolfgang Raberg , Klemens Pruegl
CPC classification number: H01L43/08 , H01L27/224 , H01L27/228 , H01L43/02 , H01L43/12
Abstract: A magnetoresistive device can include a first magnetic layer structure having a first length, a barrier layer disposed on the first magnetic layer structure, a second magnetic layer structure disposed on the barrier layer and having a second length that is less than the first length.
Abstract translation: 磁阻器件可以包括具有第一长度的第一磁性层结构，设置在第一磁性层结构上的阻挡层，设置在阻挡层上并具有小于第一长度的第二长度的第二磁性层结构。
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28.发明申请SENSOR CIRCUIT, A SENSOR DEVICE AND A METHOD FOR FORMING A SENSOR CIRCUIT 审中-公开传感器电路，传感器装置和形成传感器电路的方法公开(公告)号：US20160178397A1
公开(公告)日：2016-06-23
申请号：US14976348
申请日：2015-12-21
Applicant: Infineon Technologies AG
Inventor： Franz Jost , Harald Witschnig , Juergen Zimmer
CPC classification number: G01D5/16 , G01D3/08 , G01R33/0052 , G01R33/09
Abstract: A sensor circuit includes a plurality of half-bridge sensor circuits. The sensor circuit includes a sensor output value determination circuit configured to determine a sensor output value. The sensor circuit further includes an error determination circuit configured to generate an error signal based on a first half-bridge sensor signal and a second half-bridge sensor signal. The sensor circuit further includes a control circuit configured to control a selection of one of the first half-bridge sensor circuit and the second half-bridge sensor circuit for providing one of the first half-bridge sensor signal and the second half-bridge sensor signal to the sensor output value determination circuit to determine the sensor output value.
Abstract translation: 传感器电路包括多个半桥传感器电路。 传感器电路包括：传感器输出值确定电路，被配置为确定传感器输出值。 传感器电路还包括错误确定电路，其被配置为基于第一半桥传感器信号和第二半桥传感器信号产生误差信号。 所述传感器电路还包括控制电路，所述控制电路被配置为控制所述第一半桥传感器电路和所述第二半桥传感器电路之一的选择，用于提供所述第一半桥传感器信号和所述第二半桥传感器信号中的一个 传感器输出值确定电路确定传感器的输出值。
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公开(公告)号：US20160097827A1
公开(公告)日：2016-04-07
申请号：US14969378
申请日：2015-12-15
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer
IPC: G01R33/09
CPC classification number: G01R33/09 , G01R33/0052 , H05K3/30 , Y10T29/4913
Abstract: An XMR-sensor and method for manufacturing the XMR-Sensor are provided. The XMR-sensor includes a substrate, a first contact, a second contact and an XMR-structure. The substrate includes a first main surface area and a second main surface area. The first contact is arranged at the first main surface area and the second contact is arranged at the second main surface area. The XMR-structure extends from the first contact to the second contact such that an XMR-plane of the XMR-structure is arranged along a first direction perpendicular to the first main surface area or the second main surface area.
Abstract translation: 提供了一种用于制造XMR传感器的XMR传感器和方法。 XMR传感器包括基板，第一触点，第二触点和XMR结构。 基板包括第一主表面区域和第二主表面区域。 第一触点设置在第一主表面区域，第二触点设置在第二主表面区域。 XMR结构从第一接触延伸到第二接触，使得XMR结构的XMR平面沿着垂直于第一主表面区域或第二主表面区域的第一方向排列。
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30.发明授权公开(公告)号：US09240546B2
公开(公告)日：2016-01-19
申请号：US13850345
申请日：2013-03-26
Applicant: Infineon Technologies AG
Inventor： Juergen Zimmer , Wolfgang Raberg , Stephan Schmitt
Abstract: A magnetoresistive device includes a substrate and an electrically insulating layer arranged over the substrate. The magnetoresistive device further includes a first free layer embedded in the electrically insulating layer and a second free layer embedded in the electrically insulating layer. The first free layer and the second free layer are separated by a portion of the electrically insulating layer.
Abstract translation: 磁阻器件包括衬底和布置在衬底上的电绝缘层。 磁阻器件还包括嵌入在电绝缘层中的第一自由层和嵌入电绝缘层中的第二自由层。 第一自由层和第二自由层被电绝缘层的一部分分开。
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