公开(公告)号：US09006899B2

公开(公告)日：2015-04-14

申请号：US13716017

申请日：2012-12-14

Applicant: Infineon Technologies AG

Inventor： Paul Ganitzer ,  Kurt Matoy ,  Martin Sporn ,  Mark Harrison

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/498 ,  H01L21/02

CPC classification number: H01L23/49866 ,  H01L21/02697 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/29 ,  H01L2224/0347 ,  H01L2224/03848 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05172 ,  H01L2224/05639 ,  H01L2224/13111 ,  H01L2224/29111 ,  H01L2924/0002 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01023

Abstract: In one embodiment method, a first Ti based layer is deposited on the substrate. An intermediate Al based layer is deposited on the first layer, a second NiV based layer is deposited on the intermediate layer, and a third Ag based layer is deposited on the second layer. The layer stack is tempered in such a way that at least one inter-metallic phase is formed between at least two metals of the group containing Ti, Al, Ni and V.

Abstract translation: 在一个实施方案中，在衬底上沉积第一Ti基层。 中间Al基层沉积在第一层上，第二NiV基层沉积在中间层上，第三Ag基层沉积在第二层上。 层叠体以这样一种方式进行回火，使得在至少两种含Ti，Al，Ni和V的金属之间形成至少一个金属间相。