公开(公告)号：US20130299902A1

公开(公告)日：2013-11-14

申请号：US13943143

申请日：2013-07-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： KANGGUO CHENG ,  BRUCE B. DORIS ,  ALI KHAKIFIROOZ ,  GHAVAM G. SHAHIDI

IPC: H01L29/78

CPC classification number: H01L29/7839 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66772 ,  H01L29/66795

Abstract: A device and method for forming a semiconductor device include growing a raised semiconductor region on a channel layer adjacent to a gate structure. A space is formed between the raised semiconductor region and the gate structure. A metal layer is deposited on at least the raised semiconductor region. The raised semiconductor region is silicided to form a silicide into the channel layer which extends deeper into the channel layer at a position corresponding to the space.

Abstract translation: 用于形成半导体器件的器件和方法包括在与栅极结构相邻的沟道层上生长凸起的半导体区域。 在凸起的半导体区域和栅极结构之间形成空间。 在至少凸起的半导体区域上沉积金属层。 凸起的半导体区域被硅化以在通道层中形成硅化物，该沟道层在对应于空间的位置处更深地延伸到沟道层中。